A CMOS silicon spin qubit R Maurand, X Jehl, D Kotekar-Patil, A Corna, H Bohuslavskyi, R Laviéville, ...
Nature communications 7 (1), 13575, 2016
648 2016 Advances, challenges and opportunities in 3D CMOS sequential integration P Batude, M Vinet, B Previtali, C Tabone, C Xu, J Mazurier, O Weber, ...
2011 International Electron Devices Meeting, 7.3. 1-7.3. 4, 2011
414 2011 Advances in 3D CMOS sequential integration P Batude, M Vinet, A Pouydebasque, C Le Royer, B Previtali, C Tabone, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
393 2009 Planar Fully depleted SOI technology: A Powerful architecture for the 20nm node and beyond O Faynot, F Andrieu, O Weber, C Fenouillet-Béranger, P Perreau, ...
2010 International Electron Devices Meeting, 3.2. 1-3.2. 4, 2010
329 2010 3D monolithic integration: Technological challenges and electrical results M Vinet, P Batude, C Tabone, B Previtali, C LeRoyer, A Pouydebasque, ...
Microelectronic Engineering 88 (4), 331-335, 2011
323 2011 22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications R Carter, J Mazurier, L Pirro, JU Sachse, P Baars, J Faul, C Grass, ...
2016 IEEE International Electron Devices Meeting (IEDM), 2.2. 1-2.2. 4, 2016
316 2016 Single-donor ionization energies in a nanoscale CMOS channel M Pierre, R Wacquez, X Jehl, M Sanquer, M Vinet, O Cueto
Nature nanotechnology 5 (2), 133-137, 2010
298 2010 Setting up 3D sequential integration for back-illuminated CMOS image sensors with highly miniaturized pixels with low temperature fully depleted SOI transistors P Coudrain, P Batude, X Gagnard, C Leyris, S Ricq, M Vinet, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
275 2008 Demonstration of low temperature 3D sequential FDSOI integration down to 50 nm gate length P Batude, M Vinet, C Xu, B Previtali, C Tabone, C Le Royer, L Sanchez, ...
2011 Symposium on VLSI Technology-Digest of Technical Papers, 158-159, 2011
272 2011 3D monolithic integration P Batude, M Vinet, A Pouydebasque, C Le Royer, B Previtali, C Tabone, ...
2011 IEEE International Symposium of Circuits and Systems (ISCAS), 2233-2236, 2011
259 2011 Circuit with transistors integrated in three dimensions and having a dynamically adjustable threshold voltage VT P Batude, L Clavelier, MA Jaud, O Thomas, M Vinet
US Patent 8,183,630, 2012
252 2012 Multi- JP Noel, O Thomas, MA Jaud, O Weber, T Poiroux, C Fenouillet-Beranger, ...
IEEE Transactions on Electron Devices 58 (8), 2473-2482, 2011
234 2011 SRAM memory cell having transistors integrated at several levels and the threshold voltage VT of which is dynamically adjustable O Thomas, P Batude, A Pouydebasque, M Vinet
US Patent 8,013,399, 2011
232 2011 Germanium on Insulator and new 3D architectures opportunities for integration M Vinet, C Le Royer, P Batude, JF Damlencourt, JM Hartmann, L Hutin, ...
International Journal of Nanotechnology 7 (4-8), 304-319, 2010
218 2010 Integrated circuit with electrostatically coupled MOS transistors and method for producing such an integrated circuit E Augendre, M Vinet, L Clavelier, P Batude
US Patent 8,853,785, 2014
209 2014 Scaling silicon-based quantum computing using CMOS technology MF Gonzalez-Zalba, S De Franceschi, E Charbon, T Meunier, M Vinet, ...
Nature Electronics 4 (12), 872-884, 2021
204 2021 Multiple gate devices: advantages and challenges T Poiroux, M Vinet, O Faynot, J Widiez, J Lolivier, T Ernst, B Previtali, ...
Microelectronic Engineering 80, 378-385, 2005
162 2005 The future transistors W Cao, H Bu, M Vinet, M Cao, S Takagi, S Hwang, T Ghani, K Banerjee
Nature 620 (7974), 501-515, 2023
156 2023 Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon A Crippa, R Ezzouch, A Aprá, A Amisse, R Lavieville, L Hutin, B Bertrand, ...
Nature communications 10 (1), 2776, 2019
151 2019 3DVLSI with CoolCube process: An alternative path to scaling P Batude, C Fenouillet-Beranger, L Pasini, V Lu, F Deprat, L Brunet, ...
2015 Symposium on VLSI Technology (VLSI Technology), T48-T49, 2015
151 2015 
Tristan MeunierCNRS-Institut NéelEmail verificata su neel.cnrs.fr