Dr. Aminul Islam

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Mohammad HasanDepartment of Electronics Engineering, Aligarh Muslim UniversityEmail verificata su amu.ac.in
Dr. Vikash KumarAssistant Professor, Christ UniversityEmail verificata su ieee.org
Amit Krishna Dwivedi, PhDAssistant Professor, University of Warwick, Coventry, UKEmail verificata su ieee.org
Rishab MehraApple Inc, The University of Texas at AustinEmail verificata su utexas.edu
Dr. Manisha GuduriSchool of Computing and Informatics, University of Louisiana at LafayetteEmail verificata su ieee.org
Santashraya PrasadBirla Insitute Of technologyEmail verificata su bitmesra.ac.in
M. W. AkramDept. of ECE, Jamia Millia Islamia, New DelhiEmail verificata su jmi.ac.in
Dr. Sachin Dattatray PableHOD Electronics and Telecommunication. Government PolytechnicEmail verificata su gov.in
Anumita SenguptaIndian Institute of Technology KharagpurEmail verificata su iitkgp.ac.in
Sarika TyagiResearch Scholar I PhD Student at UNSW, SydneyEmail verificata su student.unsw.edu.au
Dr. Mohd Ajmal KafeelAssociate Professor, University Women's Polytechnic, Aligarh Muslim University, AMU, AligarhEmail verificata su amu.ac.in
Nitin AnandUniversity of Wisconsin, MadisonEmail verificata su wisc.edu
Abhijeet PasumarthyNvidia, Qualcomm, UC San Diego, BIT MesraEmail verificata su nvidia.com
Sudip KunduAssistant Professor of Electronics and Communication Engg, National Institute of Technology RourkelaEmail verificata su nitrkl.ac.in
Tughrul ArslanUniversity of EdinburghEmail verificata su ed.ac.uk
Prashant GuptaNXP SemiconductorsEmail verificata su nxp.com
Debosmit MajumderEngineer at QualcommEmail verificata su eng.ucsd.edu
vivek agarwalProfessor of Department of Electrical Engg, Indian Institute of Technology-BombayEmail verificata su ee.iitb.ac.in
Shree Prakash TiwariProfessor, Department of Electrical Engineering, Indian Institute of Technology JodhpurEmail verificata su iitj.ac.in
Vivek DixitAssociate Professor, Department of E & ECE, IIT Kharagpur, IndiaEmail verificata su ece.iitkgp.ac.in

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Dr. Aminul Islam

Professor, Birla Institute of Technology (Deemed to be University), MESRA, Ranchi, India-835215

Email verificata su ieee.org - Home page

Nanoelectronics HEMT-TFET SRAM MTJ-MRAM RRAM


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Leakage characterization of 10T SRAM cell A Islam, M Hasan IEEE transactions on electron devices 59 (3), 631-638, 2012	188	2012
Variation tolerant differential 8T SRAM cell for ultralow power applications S Pal, A Islam IEEE transactions on computer-aided design of integrated circuits and …, 2015	140	2015
A technique to mitigate impact of process, voltage and temperature variations on design metrics of SRAM Cell A Islam, M Hasan Microelectronics Reliability 52 (2), 405-411, 2012	121	2012
9-T SRAM cell for reliable ultralow-power applications and solving multibit soft-error issue S Pal, A Islam IEEE Transactions on Device and Materials Reliability 16 (2), 172-182, 2016	102	2016
Optimized design of a 32-nm CNFET-based low-power ultrawideband CCII A Imran, M Hasan, A Islam, SA Abbasi IEEE transactions on Nanotechnology 11 (6), 1100-1109, 2012	75	2012
Characterization of half-select free write assist 9T SRAM cell S Pal, S Bose, WH Ki, A Islam IEEE transactions on electron devices 66 (11), 4745-4752, 2019	69	2019
Variability aware low leakage reliable SRAM cell design technique A Islam, M Hasan Microelectronics reliability 52 (6), 1247-1252, 2012	62	2012
Half-select-free low-power dynamic loop-cutting write assist SRAM cell for space applications S Pal, S Bose, WH Ki, A Islam IEEE Transactions on Electron Devices 67 (1), 80-89, 2019	58	2019
Highly stable low power radiation hardened memory-by-design SRAM for space applications S Pal, DD Sri, WH Ki, A Islam IEEE Transactions on Circuits and Systems II: Express Briefs 68 (6), 2147-2151, 2020	56	2020
Design of soft-error-aware SRAM with multi-node upset recovery for aerospace applications S Pal, S Mohapatra, WH Ki, A Islam IEEE Transactions on Circuits and Systems I: Regular Papers 68 (6), 2470-2480, 2021	51	2021
Soft-error resilient read decoupled SRAM with multi-node upset recovery for space applications S Pal, DD Sri, WH Ki, A Islam IEEE Transactions on Electron Devices 68 (5), 2246-2254, 2021	51	2021
A highly stable reliable SRAM cell design for low power applications S Pal, S Bose, WH Ki, A Islam Microelectronics Reliability 105, 113503, 2020	51	2020
Transmission gate‐based 9T SRAM cell for variation resilient low power and reliable internet of things applications S Pal, V Gupta, WH Ki, A Islam IET Circuits, Devices & Systems 13 (5), 584-595, 2019	48	2019
Design of power-and variability-aware nonvolatile RRAM cell using memristor as a memory element S Pal, S Bose, WH Ki, A Islam IEEE Journal of the Electron Devices Society 7, 701-709, 2019	47	2019
A 2.5 GHz Low Power, High- , Reliable Design of Active Bandpass Filter V Kumar, R Mehra, A Islam IEEE Transactions on Device and Materials Reliability 17 (1), 229-244, 2017	44	2017
Circuit‐level design technique to mitigate impact of process, voltage and temperature variations in complementary metal‐oxide semiconductor full adder cells V Dokania, A Islam IET Circuits, Devices & Systems 9 (3), 204-212, 2015	41	2015
Optimization of SiC UMOSFET structure for improvement of breakdown voltage and ON-resistance D Bharti, A Islam IEEE Transactions on Electron Devices 65 (2), 615-621, 2017	40	2017
Variation resilient subthreshold SRAM cell design technique A Islam, M Hasan, T Arslan International Journal of Electronics 99 (9), 1223-1237, 2012	40	2012
Floating active inductor based Class-C VCO with 8 digitally tuned sub-bands R Mehra, V Kumar, A Islam AEU-International Journal of Electronics and Communications 83, 1-10, 2018	37	2018
Design of 10T full adder cell for ultralow-power applications V Dokania, R Verma, M Guduri, A Islam Ain Shams Engineering Journal 9 (4), 2363-2372, 2018	33	2018

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