John C. Bean

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Leonard FeldmanProfessor of Physics and Materials ScienceEmail verificata su rutgers.edu
J. Murray GibsonProfessor of Mechanical EngineeringEmail verificata su eng.famu.fsu.edu
T.P. PearsallEPICEmail verificata su ieee.org
Raymond T. TungBrooklyn College, Bell LabsEmail verificata su brooklyn.cuny.edu
Joe CampbellProfessor Electrical and Computer Engineering, University of VirginiaEmail verificata su virginia.edu
Ian RobinsonBrookhaven LabEmail verificata su ucl.ac.uk
Abbas OurmazdDistinguished Professor of PhysicsEmail verificata su uwm.edu
Serge LuryiDistinguished Professor of Electrical Engineering, Stony Brook UniversityEmail verificata su stonybrook.edu
Colin HumphreysQueen Mary University of LondonEmail verificata su qmul.ac.uk
James M. TourProfessor, Rice University, Department of Chemistry, Materials Science and NanoEngineering, andEmail verificata su rice.edu
eric p kvamProfessor, Materials Engineering, Purdue UniversityEmail verificata su purdue.edu
Thomas VanderveldeTufts UniversityEmail verificata su ece.tufts.edu
George K CellerProfessor of Materials Science, Rutgers UniversityEmail verificata su rci.rutgers.edu
Anders OlssonPearl LaboratoriesEmail verificata su pearllaboratories.com
Rudolf TrompIBM T.J. Watson Research Center / Leiden UniversityEmail verificata su us.ibm.com
Mark S HybertsenSenior Physicist, Emeritus, Center for Functional Nanomaterials, Brookhaven National LaboratoryEmail verificata su bnl.gov
Mircea R. StanVirginia Microelectronics Consortium (VMEC) Professor, University of VirginiaEmail verificata su virginia.edu
Jerry TersoffIBMEmail verificata su us.ibm.com
Nathan SwamiProfessor, University of Virginia, Charlottesville, VAEmail verificata su virginia.edu
Garrett S. RoseProfessor, University of TennesseeEmail verificata su utk.edu

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John C. Bean

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Semiconductor nanostructures MBE SiGe Sustainable Energy Education


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Magnetization of hard superconductors CP Bean Physical review letters 8 (6), 250, 1962	5660	1962
Calculation of critical layer thickness versus lattice mismatch for Ge_xSi_1−x/Si strained‐layer heterostructures R People, JC Bean Applied Physics Letters 47 (3), 322-324, 1985	2492	1985
Ge_xSi_1−x/Si strained‐layer superlattice grown by molecular beam epitaxy JC Bean, LC Feldman, AT Fiory, S Nakahara, IK Robinson Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 2 (2 …, 1984	1015	1984
Band alignments of coherently strained Ge_xSi_1−x/Si heterostructures on <001> Ge_ySi_1−y substrates R People, JC Bean Applied physics letters 48 (8), 538-540, 1986	465	1986
Measurement of the band gap of GexSi1− x/Si strained‐layer heterostructures DV Lang, R People, JC Bean, AM Sergent Applied Physics Letters 47 (12), 1333-1335, 1985	448	1985
Modulation doping in Ge_xSi_1−x/Si strained layer heterostructures R People, JC Bean, DV Lang, AM Sergent, HL Störmer, KW Wecht, ... Applied Physics Letters 45 (11), 1231-1233, 1984	399	1984
Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors DH Auston, AM Johnson, PR Smith, JC Bean Applied Physics Letters 37 (4), 371-373, 1980	357	1980
Silicon-based semiconductor heterostructures: column IV bandgap engineering JC Bean Proceedings of the IEEE 80 (4), 571-587, 1992	356	1992
Observation of order-disorder transitions in strained-semiconductor systems A Ourmazd, JC Bean Physical review letters 55 (7), 765, 1985	314	1985
Pseudomorphic growth of Ge_xSi₁₋_x on silicon by molecular beam epitaxy JC Bean, TT Sheng, LC Feldman, AT Fiory, RT Lynch Applied Physics Letters 44 (1), 102-104, 1984	313	1984
Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films C Teichert, MG Lagally, LJ Peticolas, JC Bean, J Tersoff Physical Review B 53 (24), 16334, 1996	302	1996
Misfit dislocations in lattice-mismatched epitaxial films R Hull, JC Bean Critical Reviews in Solid State and Material Sciences 17 (6), 507-546, 1992	294	1992
Raman scattering from Ge_xSi_1−x/Si strained‐layer superlattices F Cerdeira, A Pinczuk, JC Bean, B Batlogg, BA Wilson Applied physics letters 45 (10), 1138-1140, 1984	293	1984
GexSi1− x strained‐layer superlattice waveguide photodetectors operating near 1.3 μm H Temkin, TP Pearsall, JC Bean, RA Logan, S Luryi Applied Physics Letters 48 (15), 963-965, 1986	291	1986
Epitaxial silicides RT Tung, JM Poate, JC Bean, JM Gibson, DC Jacobson Thin Solid Films 93 (1-2), 77-90, 1982	261	1982
New infrared detector on a silicon chip S Luryi, A Kastalsky, JC Bean IEEE Transactions on Electron Devices 31 (9), 1135-1139, 1984	243	1984
Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon JC Bean, GE Becker, PM Petroff, TE Seidel Journal of Applied Physics 48 (3), 907-913, 1977	241	1977
Growth of single‐crystal CoSi₂ on Si(111) RT Tung, JC Bean, JM Gibson, JM Poate, DC Jacobson Applied Physics Letters 40 (8), 684-686, 1982	238	1982
Stability of semiconductor strained‐layer superlattices R Hull, JC Bean, F Cerdeira, AT Fiory, JM Gibson Applied physics letters 48 (1), 56-58, 1986	202	1986
Dislocation nucleation near the critical thickness in GeSi/Si strained layers DJ Eaglesham, EP Kvam, DM Maher, CJ Humphreys, JC Bean Philosophical Magazine A 59 (5), 1059-1073, 1989	199	1989

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