| A general memristor-based partial differential equation solver MA Zidan, YJ Jeong, J Lee, B Chen, S Huang, MJ Kushner, WD Lu Nature Electronics 1 (7), 411, 2018 | 231 | 2018 |
| A physics-based compact model of metal-oxide-based RRAM DC and AC operations P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ... IEEE Trans. Electron Devices 60 (12), 4090-4097, 2013 | 223 | 2013 |
| Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems B Gao, Y Bi, HY Chen, R Liu, P Huang, B Chen, L Liu, X Liu, S Yu, ... ACS nano 8 (7), 6998-7004, 2014 | 197 | 2014 |
| RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ... IEEE, 2013 | 191 | 2013 |
| Physical mechanisms of endurance degradation in TMO-RRAM B Chen, Y Lu, B Gao, YH Fu, FF Zhang, P Huang, YS Chen, LF Liu, ... Electron Devices Meeting (IEDM), 2011 IEEE International, 12.3. 1-12.3. 4, 2011 | 176 | 2011 |
| Memristive physically evolving networks enabling the emulation of heterosynaptic plasticity Y Yang, B Chen, WD Lu Advanced Materials 27 (47), 7720-7727, 2015 | 159 | 2015 |
| A SPICE model of resistive random access memory for large-scale memory array simulation H Li, P Huang, B Gao, B Chen, X Liu, J Kang IEEE Electron Device Letters 35 (2), 211-213, 2014 | 146 | 2014 |
| Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides YS Chen, JF Kang, B Chen, B Gao, LF Liu, XY Liu, YY Wang, L Wu, ... Journal of Physics D: Applied Physics 45 (6), 065303, 2012 | 146 | 2012 |
| Efficient in-memory computing architecture based on crossbar arrays B Chen, F Cai, J Zhou, W Ma, P Sheridan, WD Lu Electron Devices Meeting (IEDM), 2015 IEEE International, 17.5. 1-17.5. 4, 2015 | 141 | 2015 |
| Very low-programming-current RRAM with self-rectifying characteristics J Zhou, F Cai, Q Wang, B Chen, S Gaba, WD Lu IEEE Electron Device Letters 37 (4), 404-407, 2016 | 115 | 2016 |
| Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching B Gao, JF Kang, YS Chen, FF Zhang, B Chen, P Huang, LF Liu, XY Liu, ... Electron Devices Meeting (IEDM), 2011 IEEE International, 17.4. 1-17.4. 4, 2011 | 88 | 2011 |
| Modeling of retention failure behavior in bipolar oxide-based resistive switching memory B Gao, H Zhang, B Chen, L Liu, X Liu, R Han, J Kang, Z Fang, H Yu, B Yu, ... IEEE Electron Device Letters 32 (3), 276-278, 2011 | 88 | 2011 |
| Highly compact 1T-1R architecture (4F2 footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting … XP Wang, Z Fang, X Li, B Chen, B Gao, JF Kang, ZX Chen, A Kamath, ... Electron Devices Meeting (IEDM), 2012 IEEE International, 20.6. 1-20.6. 4, 2012 | 75 | 2012 |
| Analytic model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM P Huang, B Chen, YJ Wang, FF Zhang, L Shen, R Liu, L Zeng, G Du, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 22.5. 1-22.5. 4, 2013 | 67 | 2013 |
| A physical based analytic model of RRAM operation for circuit simulation P Huang, XY Liu, WH Li, YX Deng, B Chen, Y Lu, B Gao, L Zeng, KL Wei, ... Electron Devices Meeting (IEDM), 2012 IEEE International, 26.6. 1-26.6. 4, 2012 | 64 | 2012 |
| Design and optimization methodology for 3D RRAM arrays Y Deng, HY Chen, B Gao, S Yu, SC Wu, L Zhao, B Chen, Z Jiang, X Liu, ... Electron Devices Meeting (IEDM), 2013 IEEE International, 25.7. 1-25.7. 4, 2013 | 63 | 2013 |
| Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device YS Chen, B Chen, B Gao, LF Liu, XY Liu, JF Kang Journal of Applied Physics 113 (16), 164507, 2013 | 62 | 2013 |
| A novel defect-engineering-based implementation for high-performance multilevel data storage in resistive switching memory B Gao, B Chen, F Zhang, L Liu, X Liu, J Kang, H Yu, B Yu IEEE Transactions on Electron Devices 60 (4), 1379-1383, 2013 | 58 | 2013 |
| A novel operation scheme for oxide-based resistive-switching memory devices to achieve controlled switching behaviors B Chen, B Gao, SW Sheng, LF Liu, XY Liu, YS Chen, Y Wang, RQ Han, ... Electron Device Letters, IEEE 32 (3), 282-284, 2011 | 54 | 2011 |
| HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability Y Peng, W Xiao, Y Liu, C Jin, X Deng, Y Zhang, F Liu, Y Zheng, Y Cheng, ... IEEE Electron Device Letters 43 (2), 216-219, 2021 | 51 | 2021 |
Bin GaoTsinghua UniversityEmail verificata su pku.edu.cn
