| Compact damping models for laterally moving microstructures with gas-rarefaction effects T Veijola, M Turowski Journal of Microelectromechanical Systems 10 (2), 263-273, 2001 | 189 | 2001 |
| Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides M Turowski, A Raman, RD Schrimpf IEEE transactions on nuclear science 51 (6), 3166-3171, 2004 | 180 | 2004 |
| Intermediate-band solar cells based on quantum dot supracrystals Q Shao, AA Balandin, AI Fedoseyev, M Turowski Applied Physics Letters 91 (16), 2007 | 146 | 2007 |
| Method of three-dimensional network solution of leakage field of three-phase transformers J Turowski, M Turowski, M Kopec IEEE Transactions on Magnetics 26 (5), 2911-2919, 1990 | 111 | 1990 |
| Fast, automated thermal simulation of three-dimensional integrated circuits P Wilkerson, A Raman, M Turowski The Ninth Intersociety Conference on Thermal and Thermomechanical Phenomena …, 2004 | 78 | 2004 |
| An evaluation of transistor-layout RHBD techniques for SEE mitigation in SiGe HBTs AK Sutton, M Bellini, JD Cressler, JA Pellish, RA Reed, PW Marshall, ... IEEE Transactions on Nuclear Science 54 (6), 2044-2052, 2007 | 70 | 2007 |
| Mixed-mode simulation and analysis of digital single event transients in fast CMOSICs M Turowski, A Raman, G Jablonski 2007 14th International Conference on Mixed Design of Integrated Circuits …, 2007 | 62 | 2007 |
| Heavy-ion-induced degradation in SiC Schottky diodes: Incident angle and energy deposition dependence A Javanainen, M Turowski, KF Galloway, C Nicklaw, V Ferlet-Cavrois, ... IEEE Transactions on Nuclear Science 64 (8), 2031-2037, 2017 | 58 | 2017 |
| Heavy ion microbeam-and broadbeam-induced transients in SiGe HBTs JA Pellish, RA Reed, D McMorrow, G Vizkelethy, VF Cavrois, J Baggio, ... IEEE Transactions on Nuclear Science 56 (6), 3078-3084, 2009 | 52 | 2009 |
| Engineering electrodynamics J Turowski, M Turowski Crc Press, 2014 | 47 | 2014 |
| Single event transient response of SiGe voltage references and its impact on the performance of analog and mixed-signal circuits L Najafizadeh, SD Phillips, KA Moen, RM Diestelhorst, M Bellini, PK Saha, ... IEEE Transactions on Nuclear Science 56 (6), 3469-3476, 2009 | 43 | 2009 |
| Compact thermal modeling analysis for 3D integrated circuits P Wilkerson, M Furmanczyk, M Turowski 11th International Conference Mixed Design of Integrated Circuits and …, 2004 | 37 | 2004 |
| Temperature-dependence of off-state drain leakage in X-ray irradiated 130 nm CMOS devices B Jun, RM Diestelhorst, M Bellini, G Espinel, A Appaswamy, APG Prakash, ... IEEE transactions on nuclear science 53 (6), 3203-3209, 2006 | 35 | 2006 |
| CFD-Micromesh: A fast geometric modeling and mesh generation tool for 3D microsystem simulations Z Tan, M Furmanczyk, M Turowski, AJ Przekwas Design, Test, Integration, and Packaging of MEMS/MOEMS 4019, 193-199, 2000 | 31 | 2000 |
| Reconciling 3-D mixed-mode simulations and measured single-event transients in SiGe HBTs M Turowski, JA Pellish, KA Moen, A Raman, JD Cressler, RA Reed, G Niu IEEE Transactions on Nuclear Science 57 (6), 3342-3348, 2010 | 29 | 2010 |
| Multiphysics design and simulation environment for microelectromechanical systems AJ Przekwas, M Turowski, M Furmanczyk, A Hieke, RJ Pryputniewicz Proc. Internat. Symp. on MEMS: Mechanics and Measurements, 84-89, 2001 | 29 | 2001 |
| Efficient modeling of single event transients directly in compact device models AM Francis, M Turowski, JA Holmes, HA Mantooth 2007 IEEE International Behavioral Modeling and Simulation Workshop, 73-77, 2007 | 28 | 2007 |
| An investigation of single-event effects and potential SEU mitigation strategies in fourth-generation, 90 nm SiGe BiCMOS NE Lourenco, SD Phillips, TD England, AS Cardoso, ZE Fleetwood, ... IEEE transactions on Nuclear Science 60 (6), 4175-4183, 2013 | 26 | 2013 |
| Accurate modeling of single-event transients in a SiGe voltage reference circuit KA Moen, L Najafizadeh, J Seungwoo, A Raman, M Turowski, ... IEEE Transactions on Nuclear Science 58 (3), 877-884, 2011 | 25 | 2011 |
| Simulating the radiation response of GaAs solar cells using a defect-based TCAD model M Turowski, T Bald, A Raman, A Fedoseyev, JH Warner, CD Cress, ... IEEE Transactions on Nuclear Science 60 (4), 2477-2485, 2013 | 24 | 2013 |
Ashok RamanPrincipal Engineer, CFD Research CorporationEmail verificata su cfdrc.com