| Effect of Wood’s anomalies on the profile of extraordinary transmission spectra through metal periodic arrays of rectangular subwavelength holes with different aspect ratio YW Jiang, LDC Tzuang, YH Ye, YT Wu, MW Tsai, CY Chen, SC Lee Optics express 17 (4), 2631-2637, 2009 | 79 | 2009 |
| Localized surface plasmon polaritons in Ag∕ SiO2∕ Ag plasmonic thermal emitter YH Ye, YW Jiang, MW Tsai, YT Chang, CY Chen, DC Tzuang, YT Wu, ... Applied Physics Letters 93 (3), 2008 | 58 | 2008 |
| Coupling of surface plasmons between two silver films in a Ag/SiO2/Ag plasmonic thermal emitter with grating structure YH Ye, YW Jiang, MW Tsai, YT Chang, CY Chen, DC Tzuang, YT Wu, ... Applied Physics Letters 93 (26), 2008 | 38 | 2008 |
| Simulation-based study of hybrid fin/planar LDMOS design for FinFET-based system-on-chip technology YT Wu, F Ding, D Connelly, P Zheng, MH Chiang, JF Chen, TJK Liu IEEE Transactions on Electron Devices 64 (10), 4193-4199, 2017 | 31 | 2017 |
| Wavelength selective plasmonic thermal emitter by polarization utilizing Fabry-Pérot type resonances PE Chang, YW Jiang, HH Chen, YT Chang, YT Wu, LDC Tzuang, YH Ye, ... Applied Physics Letters 98 (7), 2011 | 31 | 2011 |
| Narrow bandwidth midinfrared waveguide thermal emitters YT Wu, YT Chang, HH Chen, HF Huang, DC Tzuang, YW Jiang, ... IEEE Photonics Technology Letters 22 (15), 1159-1161, 2010 | 23 | 2010 |
| Emission properties of Ag/dielectric/Ag plasmonic thermal emitter with different lattice type, hole shape, and dielectric material YT Chang, YT Wu, JH Lee, HH Chen, CY Hsueh, HF Huang, YW Jiang, ... Applied Physics Letters 95 (21), 2009 | 22 | 2009 |
| Localized surface plasmons in Al∕ Si structure and Ag∕ SiO2∕ Ag emitter with different concentric metal rings YT Chang, YH Ye, DC Tzuang, YT Wu, CH Yang, CF Chan, YW Jiang, ... Applied Physics Letters 92 (23), 2008 | 19 | 2008 |
| Polarization rotation of shape resonance in Archimedean spiral slots LDC Tzuang, YW Jiang, YH Ye, YT Chang, YT Wu, SC Lee Applied Physics Letters 94 (9), 2009 | 15 | 2009 |
| Surface plasmon on aluminum concentric rings arranged in a long-range periodic structure YT Chang, DC Tzuang, YT Wu, CF Chan, YH Ye, TH Hung, YF Chen, ... Applied Physics Letters 92 (25), 2008 | 14 | 2008 |
| Narrow bandwidth and highly polarized ratio infrared thermal emitter HH Chen, YW Jiang, YT Wu, PE Chang, YT Chang, HF Huang, SC Lee Applied Physics Letters 97 (16), 2010 | 13 | 2010 |
| Characteristics of a waveguide mode in a trilayer Ag/SiO2/Au plasmonic thermal emitter YW Jiang, YT Wu, MW Tsai, PE Chang, DC Tzuang, YH Ye, SC Lee Optics letters 34 (20), 3089-3091, 2009 | 10 | 2009 |
| Substrate of semiconductor device including epitaxial layer and silicon layer having same crystalline orientation WY Weng, CT Huang, YR Yang, YT Wu, YM Lin, JY Wang US Patent 9,508,799, 2016 | 9 | 2016 |
| Localized shape resonance on silver film perforated by H-shaped and more complex shaped hole arrays HF Huang, YW Jiang, HH Chen, YT Wu, YT Chang, FT Chuang, SC Lee Optics express 19 (6), 5225-5231, 2011 | 7 | 2011 |
| Simulation-Based Study of Si/Si0.9Ge0.1/Si Hetero-Channel FinFET for Enhanced Performance in Low-Power Applications F Ding, YT Wu, D Connelly, W Zhang, TJK Liu IEEE Electron Device Letters 40 (3), 363-366, 2019 | 6 | 2019 |
| Simulation-based study of low minimum operating voltage SRAM with inserted-oxide FinFETs and gate-all-around transistors YT Wu, F Ding, MH Chiang, JF Chen, TJK Liu IEEE Transactions on Electron Devices 69 (4), 1823-1829, 2022 | 5 | 2022 |
| Simulation-based study of high-density SRAM voltage scaling enabled by inserted-oxide FinFET technology YT Wu, F Ding, D Connelly, MH Chiang, JF Chen, TJK Liu IEEE Transactions on Electron Devices 66 (4), 1754-1759, 2019 | 5 | 2019 |
| Simulation-based study of high-permittivity inserted-oxide FinFET with low-permittivity inner spacers YT Wu, MH Chiang, JF Chen, TJK Liu IEEE Transactions on Electron Devices 68 (11), 5529-5534, 2021 | 3 | 2021 |
| Cell ratio tuning for high-density SRAM voltage scaling with inserted-oxide FinFETs F Ding, P Zheng, D Connelly, YT Wu, TJK Liu IEEE Electron Device Letters 37 (12), 1539-1542, 2016 | 3 | 2016 |
| High-density SRAM voltage scaling enabled by inserted-oxide FinFET technology YT Wu, MH Chiang, JF Chen, F Ding, D Connelly, TJK Liu 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017 | 2 | 2017 |
