Articoli con mandati relativi all'accesso pubblico - Dr. Katja Puschkarsky; Dr. Katja WaschneckUlteriori informazioni
Non disponibile pubblicamente: 1
Voltage-dependent activation energy maps for analytic lifetime modeling of NBTI without time extrapolation
K Puschkarsky, H Reisinger, C Schlünder, W Gustin, T Grasser
IEEE Transactions on Electron Devices 65 (11), 4764-4771, 2018
Mandati: Federal Ministry of Education and Research, Germany
Disponibili pubblicamente: 5
Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics—Part I: Experimental
B Ullmann, M Jech, K Puschkarsky, GA Rott, M Waltl, Y Illarionov, ...
IEEE Transactions on Electron Devices 66 (1), 232-240, 2018
Mandati: Austrian Science Fund
Implications of gate-sided hydrogen release for post-stress degradation build-up after BTI stress
T Grasser, M Waltl, K Puschkarsky, B Stampfer, G Rzepa, G Pobegen, ...
2017 IEEE International Reliability Physics Symposium (IRPS), 6A-2.1-6A-2.6, 2017
Mandati: Austrian Science Fund
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors
T Grasser, B Stampfer, M Waltl, G Rzepa, K Rupp, F Schanovsky, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 2A. 2-1-2A. 2-10, 2018
Mandati: Austrian Science Fund
The impact of mixed negative bias temperature instability and hot carrier stress on single oxide defects
B Ullmann, M Jech, S Tyaginov, M Waltl, Y Illarionov, A Grill, ...
2017 IEEE International Reliability Physics Symposium (IRPS), XT-10.1-XT-10.6, 2017
Mandati: Austrian Science Fund
Evaluation of advanced MOSFET threshold voltage drift measurement techniques
B Ullmann, K Puschkarsky, M Waltl, H Reisinger, T Grasser
IEEE Transactions on Device and Materials Reliability 19 (2), 358-362, 2019
Mandati: Austrian Science Fund
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