| Ferroelectricity and Antiferroelectricity of Doped Thin HfO2‐Based Films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, KD Kim, J Mueller, A Kersch, ... Advanced Materials 27 (11), 1811-1831, 2015 | 1094 | 2015 |
| Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, T Moon, C Seong Hwang Applied Physics Letters 102 (24), 242905, 2013 | 777 | 2013 |
| Review and perspective on ferroelectric HfO2-based thin films for memory applications MH Park, YH Lee, T Mikolajick, U Schroeder, CS Hwang MRS Communications 8 (3), 795-808, 2018 | 501 | 2018 |
| The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity M Hyuk Park, H Joon Kim, Y Jin Kim, T Moon, C Seong Hwang Applied Physics Letters 104 (7), 072901-072901-5, 2014 | 435 | 2014 |
| Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment MH Park, YH Lee, HJ Kim, T Schenk, W Lee, K Do Kim, FPG Fengler, ... Nanoscale 9 (28), 9973-9986, 2017 | 348 | 2017 |
| Thin HfxZr1‐xO2 Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability MH Park, HJ Kim, YJ Kim, T Moon, KD Kim, CS Hwang Advanced Energy Materials 4 (16), 1400610, 2014 | 348 | 2014 |
| The fundamentals and applications of ferroelectric HfO2 U Schroeder, MH Park, T Mikolajick, CS Hwang Nature Reviews Materials 7 (8), 653-669, 2022 | 345 | 2022 |
| Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material. U Schroeder, C Richter, MH Park, T Schenk, M Pešić, M Hoffmann, ... Inorganic chemistry, 2018 | 326 | 2018 |
| A comprehensive study on the structural evolution of HfO 2 thin films doped with various dopants MH Park, T Schenk, CM Fancher, ED Grimley, C Zhou, C Richter, ... Journal of Materials Chemistry C 5 (19), 4677-4690, 2017 | 315 | 2017 |
| Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors T Mikolajick, S Slesazeck, MH Park, U Schroeder MRS Bulletin 43 (5), 340-346, 2018 | 310 | 2018 |
| Next generation ferroelectric materials for semiconductor process integration and their applications T Mikolajick, S Slesazeck, H Mulaosmanovic, MH Park, S Fichtner, ... Journal of Applied Physics 129 (10), 100901, 2021 | 306 | 2021 |
| Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer HJ Kim, MH Park, YJ Kim, YH Lee, W Jeon, T Gwon, T Moon, KD Kim, ... Applied Physics Letters 105 (19), 192903, 2014 | 273 | 2014 |
| Improved Ferroelectric Switching Endurance of La-Doped Hf0.5Zr0.5O2 Thin Films AG Chernikova, MG Kozodaev, DV Negrov, EV Korostylev, MH Park, ... ACS applied materials & interfaces 10 (3), 2701-2708, 2018 | 267 | 2018 |
| A study on the wake-up effect of ferroelectric Hf 0.5 Zr 0.5 O 2 films by pulse-switching measurement HJ Kim, MH Park, YJ Kim, YH Lee, T Moon, K Do Kim, SD Hyun, ... Nanoscale 8 (3), 1383-1389, 2016 | 262 | 2016 |
| Understanding the formation of the metastable ferroelectric phase in hafnia–zirconia solid solution thin films MH Park, YH Lee, HJ Kim, YJ Kim, T Moon, K Do Kim, SD Hyun, ... Nanoscale 10 (2), 716-725, 2018 | 231 | 2018 |
| Ferroelectricity in undoped-HfO 2 thin films induced by deposition temperature control during atomic layer deposition KD Kim, MH Park, HJ Kim, YJ Kim, T Moon, YH Lee, SD Hyun, T Gwon, ... Journal of Materials Chemistry C 4 (28), 6864-6872, 2016 | 227 | 2016 |
| Toward a multifunctional monolithic device based on pyroelectricity and the electrocaloric effect of thin antiferroelectric Hf x Zr 1− x O 2 films MH Park, HJ Kim, YJ Kim, T Moon, K Do Kim, CS Hwang Nano Energy 12, 131-140, 2015 | 221 | 2015 |
| Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes M Hyuk Park, H Joon Kim, Y Jin Kim, W Lee, H Kyeom Kim, ... Applied Physics Letters 102 (11), 112914, 2013 | 220 | 2013 |
| Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories J Jiang, ZL Bai, ZH Chen, L He, DW Zhang, QH Zhang, JA Shi, MH Park, ... Nature materials 17 (1), 49-56, 2018 | 213 | 2018 |
| Effect of Zr Content on the Wake-Up Effect in Hf1–xZrxO2 Films MH Park, HJ Kim, YJ Kim, YH Lee, T Moon, KD Kim, SD Hyun, F Fengler, ... ACS applied materials & interfaces 8 (24), 15466-15475, 2016 | 213 | 2016 |
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityEmail verificata su snu.ac.kr