Excitons and biexcitons in semiconductor quantum wires L Bányai, I Galbraith, C Ell, H Haug
Physical Review B 36 (11), 6099, 1987
304 1987 Direct observation of the LO phonon bottleneck in wide GaAs/ BN Murdin, W Heiss, C Langerak, SC Lee, I Galbraith, G Strasser, ...
Physical Review B 55 (8), 5171, 1997
173 1997 Envelope-function matching conditions for GaAs/(Al, Ga) As heterojunctions I Galbraith, G Duggan
Physical Review B 38 (14), 10057, 1988
127 1988 Exciton-related lasing mechanism in ZnSe-(Zn, Cd) Se multiple quantum wells Y Kawakami, I Hauksson, H Stewart, J Simpson, I Galbraith, KA Prior, ...
Physical Review B 48 (16), 11994, 1993
106 1993 Intersubband and intrasubband electronic scattering rates in semiconductor quantum wells SC Lee, I Galbraith
Physical Review B 59 (24), 15796, 1999
103 1999 Diffusion and diffraction in dispersive optical bistability WJ Firth, I Galbraith, EM Wright
JOSA B 2 (6), 1005-1009, 1985
95 1985 Exciton binding energy and external-field-induced blue shift in double quantum wells I Galbraith, G Duggan
Physical Review B 40 (8), 5515, 1989
83 1989 Optical nonlinearities in mixed type I–type II GaAs/AlAs multiple quantum wells I Galbraith, P Dawson, CT Foxon
Physical Review B 45 (23), 13499, 1992
81 1992 Two-dimensional time-dependent quantum-mechanical scattering event I Galbraith, YS Ching, E Abraham
American Journal of Physics 52 (1), 60-68, 1984
79 1984 Suppression of Auger recombination in arsenic‐rich InAs1−x Sbx CM Ciesla, BN Murdin, CR Pidgeon, RA Stradling, CC Phillips, ...
Journal of Applied Physics 80 (5), 2994-2997, 1996
74 1996 Si: P as a laboratory analogue for hydrogen on high magnetic field white dwarf stars BN Murdin, J Li, MLY Pang, ET Bowyer, KL Litvinenko, SK Clowes, ...
Nature Communications 4 (1), 1469, 2013
71 2013 Influence of electron temperature and carrier concentration on electron–LO-phonon intersubband scattering in wide GaAs/Al x Ga 1− x As quantum wells SC Lee, I Galbraith, CR Pidgeon
Physical Review B 52 (3), 1874, 1995
65 1995 Homogeneous broadening in quantum dots due to Auger scattering with wetting layer carriers HH Nilsson, JZ Zhang, I Galbraith
Physical Review B—Condensed Matter and Materials Physics 72 (20), 205331, 2005
64 2005 Linewidth enhancement factor of quantum-dot optical amplifiers JMM Vazquez, HH Nilsson, JZ Zhang, I Galbraith
IEEE journal of quantum electronics 42 (10), 986-993, 2006
63 2006 General Force-Field Parametrization Scheme for Molecular Dynamics Simulations of Conjugated Materials in Solution J Wildman, P Repiscak, MJ Paterson, I Galbraith
Journal of chemical theory and computation 12 (8), 3813-3824, 2016
62 2016 Excitonic signatures in the photoluminescence and terahertz absorption of a I Galbraith, R Chari, S Pellegrini, PJ Phillips, CJ Dent, AFG Van Der Meer, ...
Physical Review B—Condensed Matter and Materials Physics 71 (7), 073302, 2005
62 2005 Intraband absorption for InAs/GaAs quantum dot infrared photodetectors JZ Zhang, I Galbraith
Applied physics letters 84 (11), 1934-1936, 2004
62 2004 Variable-phase method and Levinson's theorem in two dimensions: Application to a screened Coulomb potential ME Portnoi, I Galbraith
Solid state communications 103 (6), 325-329, 1997
59 1997 Exciton binding energies in semiconductor superlattices: An anisotropic-effective-medium approach MF Pereira Jr, I Galbraith, SW Koch, G Duggan
Physical Review B 42 (11), 7084, 1990
56 1990 Γ-X-Γ electron transfer in mixed type I-type II GaAs/AlAs quantum well structures J Feldmann, M Preis, EO Göbel, P Dawson, CT Foxon, I Galbraith
Solid state communications 83 (3), 245-248, 1992
55 1992 