| Complementary germanium electron–hole bilayer tunnel FET for sub-0.5-V operation L Lattanzio, L De Michielis, AM Ionescu IEEE Electron Device Letters 33 (2), 167-169, 2011 | 127 | 2011 |
| Understanding the superlinear onset of tunnel-FET output characteristic L De Michielis, L Lattanzio, AM Ionescu IEEE Electron Device Letters 33 (11), 1523-1525, 2012 | 115 | 2012 |
| The electron–hole bilayer tunnel FET L Lattanzio, L De Michielis, AM Ionescu Solid-State Electronics 74, 85-90, 2012 | 107 | 2012 |
| Fabrication and characterization of gate-all-around silicon nanowires on bulk silicon V Pott, KE Moselund, D Bouvet, L De Michielis, AM Ionescu IEEE transactions on nanotechnology 7 (6), 733-744, 2008 | 95 | 2008 |
| Ultra low power: Emerging devices and their benefits for integrated circuits AM Ionescu, L De Michielis, N Dagtekin, G Salvatore, J Cao, A Rusu, ... 2011 International Electron Devices Meeting, 16.1. 1-16.1. 4, 2011 | 82 | 2011 |
| Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current L Lattanzio, L De Michielis, AM Ionescu 2011 Proceedings of the European Solid-State Device Research Conference …, 2011 | 69 | 2011 |
| Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress AMI K. Moselund, L. De Michielis, V. Pott 2007 IEEE International Electron Devices Meeting, 191-194, 2007 | 60 | 2007 |
| The hysteretic ferroelectric tunnel FET AM Ionescu, L Lattanzio, GA Salvatore, L De Michielis, K Boucart, ... IEEE transactions on electron devices 57 (12), 3518-3524, 2010 | 50 | 2010 |
| Quantum mechanical study of the germanium electron–hole bilayer tunnel FET C Alper, L Lattanzio, L De Michielis, P Palestri, L Selmi, AM Ionescu IEEE transactions on electron devices 60 (9), 2754-2760, 2013 | 49 | 2013 |
| Tunneling and occupancy probabilities: How do they affect tunnel-FET behavior? L De Michielis, L Lattanzio, KE Moselund, H Riel, AM Ionescu IEEE electron device letters 34 (6), 726-728, 2013 | 49 | 2013 |
| The high-mobility bended n-channel silicon nanowire transistor KE Moselund, M Najmzadeh, P Dobrosz, SH Olsen, D Bouvet, ... IEEE transactions on electron devices 57 (4), 866-876, 2010 | 49 | 2010 |
| Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance C Alper, L De Michielis, N Dağtekin, L Lattanzio, D Bouvet, AM Ionescu Solid-State Electronics 84, 205-210, 2013 | 48 | 2013 |
| Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier L De Michielis, L Lattanzio, P Palestri, L Selmi, AM Ionescu 69th Device Research Conference, 111-112, 2011 | 47 | 2011 |
| On the static and dynamic behavior of the germanium electron-hole bilayer tunnel FET L Lattanzio, N Dagtekin, L De Michielis, AM Ionescu IEEE transactions on electron devices 59 (11), 2932-2938, 2012 | 45 | 2012 |
| Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs M Najmzadeh, L De Michielis, D Bouvet, P Dobrosz, S Olsen, AM Ionescu Microelectronic engineering 87 (5-8), 1561-1565, 2010 | 27 | 2010 |
| Corner effect and local volume inversion in SiNW FETs L De Michielis, KE Moselund, L Selmi, AM Ionescu IEEE transactions on nanotechnology 10 (4), 810-816, 2010 | 22 | 2010 |
| An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices L De Michielis, N Dağtekin, A Biswas, L Lattanzio, L Selmi, M Luisier, ... Applied Physics Letters 103 (12), 2013 | 19 | 2013 |
| Extraction of dynamic avalanche during IGBT turn off S Geissmann, L De Michielis, C Corvasce, M Rahimo, M Andenna Microelectronics Reliability 76, 495-499, 2017 | 15 | 2017 |
| Semiconductor tunneling device C Alper, L Lattanzio, MA Ionescu, L De Michielis, N Dagtekin US Patent 9,768,311, 2017 | 13 | 2017 |
| 3300V HiPak2 modules with enhanced trench (TSPT+) IGBTs and field charge extraction diodes rated up to 1800A C Corvasce, M Andenna, S Matthias, L Storasta, A Kopta, M Rahimo, ... PCIM Europe 2016; International Exhibition and Conference for Power …, 2016 | 13 | 2016 |
A.M. IonescuProfessor of NanoelectronicsEmail verificata su epfl.ch
