Articoli con mandati relativi all'accesso pubblico - Deji AkinwandeUlteriori informazioni
Non disponibili pubblicamente: 29
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Recent advances in two-dimensional materials beyond graphene
GR Bhimanapati, Z Lin, V Meunier, Y Jung, J Cha, S Das, D Xiao, Y Son, ...
ACS nano 9 (12), 11509-11539, 2015
Mandati: US Department of Energy
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Graphene and two-dimensional materials for silicon technology
D Akinwande, C Huyghebaert, CH Wang, MI Serna, S Goossens, LJ Li, ...
Nature 573 (7775), 507-518, 2019
Mandati: US National Science Foundation, US Department of Defense, Government of Spain
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Memristive technologies for data storage, computation, encryption, and radio-frequency communication
M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang, D Akinwande, ...
Science 376 (6597), eabj9979, 2022
Mandati: US Department of Defense, European Commission
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Support-free transfer of ultrasmooth graphene films facilitated by self-assembled monolayers for electronic devices and patterns
B Wang, M Huang, L Tao, SH Lee, AR Jang, BW Li, HS Shin, ...
ACS nano 10 (1), 1404-1410, 2016
Mandati: US National Science Foundation
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Characterization and sonochemical synthesis of black phosphorus from red phosphorus
SH Aldave, MN Yogeesh, W Zhu, J Kim, SS Sonde, AP Nayak, ...
2D Materials 3 (1), 014007, 2016
Mandati: US National Science Foundation
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Advancements in 2D flexible nanoelectronics: From material perspectives to RF applications
W Zhu, S Park, MN Yogeesh, D Akinwande
Flexible and Printed Electronics 2 (4), 043001, 2017
Mandati: US National Science Foundation, US Department of Defense
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Plasmon–trion and plasmon–exciton resonance energy transfer from a single plasmonic nanoparticle to monolayer MoS 2
M Wang, W Li, L Scarabelli, BB Rajeeva, M Terrones, LM Liz-Marzán, ...
Nanoscale 9 (37), 13947-13955, 2017
Mandati: US National Science Foundation, US Department of Defense, European Commission
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Un-doped and Er-adsorbed layered Nb2C MXene for efficient hydrazine sensing application
S Gul, MI Serna, SA Zahra, N Arif, M Iqbal, D Akinwande, S Rizwan
Surfaces and Interfaces 24, 101074, 2021
Mandati: US Agency for International Development
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Atomristors: Memory effect in atomically-thin sheets and record RF switches
R Ge, X Wu, M Kim, PA Chen, J Shi, J Choi, X Li, Y Zhang, MH Chiang, ...
2018 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2018
Mandati: US National Science Foundation
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Large area chemical vapor deposition growth of monolayer MoSe2 and its controlled sulfurization to MoS2
R Ghosh, JS Kim, A Roy, H Chou, M Vu, SK Banerjee, D Akinwande
Journal of Materials Research 31 (7), 917-922, 2016
Mandati: US National Science Foundation
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All-graphene three-terminal-junction field-effect devices as rectifiers and inverters
W Kim, C Li, N Chekurov, S Arpiainen, D Akinwande, H Lipsanen, ...
ACS nano 9 (6), 5666-5674, 2015
Mandati: Academy of Finland, Finnish Funding Agency for Innovation
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Suppression of copper thin film loss during graphene synthesis
AL Lee, L Tao, D Akinwande
ACS applied materials & interfaces 7 (3), 1527-1532, 2015
Mandati: UK Natural Environment Research Council
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Reconfigurable low-voltage hexagonal boron nitride nonvolatile switches for millimeter-wave wireless communications
SJ Yang, MM Dahan, O Levit, F Makal, P Peterson, J Alikpala, ...
Nano Letters 23 (4), 1152-1158, 2023
Mandati: US National Science Foundation, US Department of Defense
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Large area fabrication of graphene nanoribbons by wetting transparency-assisted block copolymer lithography
R Katsumata, MN Yogeesh, H Wong, SX Zhou, SM Sirard, T Huang, ...
Polymer 110, 131-138, 2017
Mandati: US National Science Foundation
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First demonstration of high performance 2D monolayer transistors on paper substrates
S Park, D Akinwande
2017 IEEE International Electron Devices Meeting (IEDM), 5.2. 1-5.2. 4, 2017
Mandati: US National Science Foundation, US Department of Defense
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Towards mm-wave nanoelectronics and RF switches using MoS22D Semiconductor
M Kim, S Park, A Sanne, SK Banerjee, D Akinwande
2018 IEEE/MTT-S International Microwave Symposium-IMS, 352-354, 2018
Mandati: US National Science Foundation
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Record fT, fmax, and GHz amplification in 2dimensional CVD MoS2 embedded gate fets
A Sanne, S Park, R Ghosh, MN Yogeesh, C Liu, D Akinwande, ...
2017 IEEE International Symposium on Circuits and Systems (ISCAS), 1-4, 2017
Mandati: US National Science Foundation, US Department of Defense
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Role of Hydrogen in Suppressing Secondary Nucleation in Chemical Vapor-Deposited MoS2
S Chowdhury, A Roy, MH Alam, T Pramanik, J Depoy, R Chrostowski, ...
ACS Applied Electronic Materials 4 (12), 6133-6141, 2022
Mandati: US National Science Foundation, US Department of Defense, Department of …
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Single-Pole-Double-Throw RF switches based on monolayer MoS2
M Kim, E Pallecchi, H Happy, D Akinwande
2021 Device Research Conference (DRC), 1-2, 2021
Mandati: US Department of Defense
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Progress in flexible 2D nanoelectronics
S Park, W Zhu, D Akinwande
ECS Transactions 77 (2), 15, 2017
Mandati: US National Science Foundation, US Department of Defense
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