| Cathodoluminescence from β‐Ga2O3 nanowires E Nogales, B Méndez, J Piqueras Applied Physics Letters 86 (11), 2005 | 124 | 2005 |
| Selectively excited photoluminescence from Eu-implanted GaN K Wang, RW Martin, KP O’Donnell, V Katchkanov, E Nogales, K Lorenz, ... Applied Physics Letters 87 (11), 2005 | 113 | 2005 |
| Red luminescence of Cr in β‐Ga2O3 nanowires E Nogales, JA García, B Méndez, J Piqueras Journal of applied physics 101 (3), 2007 | 105 | 2007 |
| Optical energies of AlInN epilayers K Wang, RW Martin, D Amabile, PR Edwards, S Hernandez, E Nogales, ... Journal of Applied Physics 103 (7), 2008 | 92 | 2008 |
| Doped gallium oxide nanowires with waveguiding behavior E Nogales, JÁ García, B Méndez, J Piqueras Applied Physics Letters 91 (13), 2007 | 86 | 2007 |
| In-doped gallium oxide micro-and nanostructures: morphology, structure, and luminescence properties I Lopez, AD Utrilla, E Nogales, B Mendez, J Piqueras, A Peche, ... The Journal of Physical Chemistry C 116 (6), 3935-3943, 2012 | 77 | 2012 |
| Influence of Sn and Cr Doping on Morphology and Luminescence of Thermally Grown Ga2O3 Nanowires I López, E Nogales, B Méndez, J Piqueras, A Peche, ... The Journal of Physical Chemistry C 117 (6), 3036-3045, 2013 | 76 | 2013 |
| Europium doped gallium oxide nanostructures for room temperature luminescent photonic devices E Nogales, B Méndez, J Piqueras, JA García Nanotechnology 20 (11), 115201, 2009 | 71 | 2009 |
| Structural and optical characterization of Eu-implanted GaN K Lorenz, NP Barradas, E Alves, IS Roqan, E Nogales, RW Martin, ... Journal Of Physics D: Applied Physics 42 (16), 165103, 2009 | 57 | 2009 |
| β-Ga2O3 nanowires for an ultraviolet light selective frequency photodetector I López, A Castaldini, A Cavallini, E Nogales, B Méndez, J Piqueras Journal of Physics D: Applied Physics 47 (41), 415101, 2014 | 56 | 2014 |
| Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures E Nogales, P Hidalgo, K Lorenz, B Méndez, J Piqueras, E Alves Nanotechnology 22 (28), 285706, 2011 | 55 | 2011 |
| High temperature annealing of rare earth implanted GaN films: Structural and optical properties K Lorenz, U Wahl, E Alves, E Nogales, S Dalmasso, RW Martin, ... Optical Materials 28 (6-7), 750-758, 2006 | 54 | 2006 |
| Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments I López, K Lorenz, E Nogales, B Méndez, J Piqueras, E Alves, JA García Journal of materials science 49, 1279-1285, 2014 | 45 | 2014 |
| Crossed Ga2O3/SnO2 Multiwire Architecture: A Local Structure Study with Nanometer Resolution G Martínez-Criado, J Segura-Ruiz, MH Chu, R Tucoulou, I López, ... Nano letters 14 (10), 5479-5487, 2014 | 42 | 2014 |
| Visible and infrared luminescence study of Er doped β-Ga2O3 and Er3 Ga5O12 E Nogales, JA García, B Méndez, J Piqueras, K Lorenz, E Alves Journal of Physics D: Applied Physics 41 (6), 065406, 2008 | 41 | 2008 |
| Resonant cavity modes in gallium oxide microwires I López, E Nogales, B Méndez, J Piqueras Applied Physics Letters 100 (26), 2012 | 35 | 2012 |
| Shape Engineering Driven by Selective Growth of SnO2 on Doped Ga2O3 Nanowires M Alonso-Orts, AM Sanchez, SA Hindmarsh, I López, E Nogales, ... Nano letters 17 (1), 515-522, 2017 | 34 | 2017 |
| Doping β-Ga2O3 with europium: influence of the implantation and annealing temperature M Peres, K Lorenz, E Alves, E Nogales, B Méndez, X Biquard, B Daudin, ... Journal of Physics D: Applied Physics 50 (32), 325101, 2017 | 32 | 2017 |
| Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering K Lorenz, E Nogales, SMC Miranda, N Franco, B Méndez, E Alves, ... Acta Materialia 61 (9), 3278-3284, 2013 | 32 | 2013 |
| Influence of Li doping on the morphology and luminescence of Ga2O3 microrods grown by a vapor-solid method I López, M Alonso-Orts, E Nogales, B Méndez, J Piqueras Semiconductor Science and Technology 31 (11), 115003, 2016 | 28 | 2016 |
