Pseudomorphic GeSiSn, SiSn and Ge layers in strained heterostructures VA Timofeev, AI Nikiforov, AR Tuktamyshev, VI Mashanov, ID Loshkarev, ...
Nanotechnology 29 (15), 154002, 2018
37 2018 High–temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots S Bietti, FB Basset, A Tuktamyshev, E Bonera, A Fedorov, S Sanguinetti
Scientific Reports 10 (1), 6532, 2020
34 2020 Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers V Timofeev, A Nikiforov, A Tuktamyshev, V Mashanov, M Yesin, ...
Nanoscale Research Letters 13, 1-8, 2018
24 2018 Spectral broadening in self-assembled GaAs quantum dots with narrow size distribution F Basso Basset, S Bietti, A Tuktamyshev, S Vichi, E Bonera, S Sanguinetti
Journal of Applied Physics 126 (2), 2019
22 2019 Temperature activated dimensionality crossover in the nucleation of quantum dots by droplet epitaxy on GaAs (111) A vicinal substrates A Tuktamyshev, A Fedorov, S Bietti, S Tsukamoto, S Sanguinetti
Scientific Reports 9 (1), 14520, 2019
19 2019 Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs (111) A vicinal substrates A Tuktamyshev, A Fedorov, S Bietti, S Vichi, KD Zeuner, KD Jöns, ...
Applied Physics Letters 118 (13), 2021
17 2021 Splitting of frequencies of optical phonons in tensile-strained germanium layers VA Volodin, VA Timofeev, AR Tuktamyshev, AI Nikiforov
JETP Letters 105, 327-331, 2017
16 2017 Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate L Anzi, A Tuktamyshev, A Fedorov, A Zurutuza, S Sanguinetti, R Sordan
npj 2D Materials and Applications 6 (1), 28, 2022
8 2022 Nucleation of Ga droplets self-assembly on GaAs (111) A substrates A Tuktamyshev, A Fedorov, S Bietti, S Vichi, R Tambone, S Tsukamoto, ...
Scientific Reports 11 (1), 6833, 2021
8 2021 Strained multilayer structures with pseudomorphic GeSiSn layers VA Timofeev, AI Nikiforov, AR Tuktamyshev, MY Yesin, VI Mashanov, ...
Semiconductors 50, 1584-1588, 2016
8 2016 Reentrant behavior of the density vs. temperature of indium islands on GaAs (111) A A Tuktamyshev, A Fedorov, S Bietti, S Tsukamoto, R Bergamaschini, ...
Nanomaterials 10 (8), 1512, 2020
6 2020 Growth of epitaxial SiSn films with high Sn content for IR converters VA Timofeev, AI Nikiforov, AP Kokhanenko, AR Tuktamyshev, ...
Russian Physics Journal 60, 354-359, 2017
6 2017 Self-assembled strained GeSiSn nanoscale structures grown by MBE on Si (100) AI Nikiforov, VA Timofeev, AR Tuktamyshev, AI Yakimov, VI Mashanov, ...
Journal of Crystal Growth 457, 215-219, 2017
6 2017 Exciton Fine Structure in A Barbiero, A Tuktamyshev, G Pirard, J Huwer, T Müller, RM Stevenson, ...
Physical Review Applied 18 (3), 034081, 2022
4 2022 Initial growth stages of Si–Ge–Sn ternary alloys grown on Si (100) by low-temperature molecular-beam epitaxy AR Tuktamyshev, VI Mashanov, VA Timofeev, AI Nikiforov, SA Teys
Semiconductors 49, 1582-1586, 2015
4 2015 Flat metamorphic InAlAs buffer layer on GaAs (111) A misoriented substrates by growth kinetics control A Tuktamyshev, S Vichi, F Cesura, A Fedorov, S Bietti, D Chrastina, ...
Journal of Crystal Growth 600, 126906, 2022
2 2022 Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs (111) Metamorphic Substrates A Tuktamyshev, S Vichi, FG Cesura, A Fedorov, G Carminati, D Lambardi, ...
Nanomaterials 12 (20), 3571, 2022
2 2022 Optically controlled dual-band quantum dot infrared photodetector S Vichi, S Bietti, FB Basset, A Tuktamyshev, A Fedorov, S Sanguinetti
Nanomaterials and Nanotechnology 12, 18479804221085790, 2022
2 2022 Formation of a stepped Si (100) surface and its effect on the growth of Ge islands MY Yesin, AI Nikiforov, VA Timofeev, AR Tuktamyshev, VI Mashanov, ...
Fizika i Tekhnika Poluprovodnikov 52 (3), 409-413, 2018
2 2018 Valence-band offsets in strained SiGeSn/Si layers with different tin contents AA Bloshkin, AI Yakimov, VA Timofeev, AR Tuktamyshev, AI Nikiforov, ...
Semiconductors 51, 329-334, 2017
2 2017