| Electrochemical metallization memories—fundamentals, applications, prospects I Valov, R Waser, JR Jameson, MN Kozicki Nanotechnology 22 (25), 254003, 2011 | 1252 | 2011 |
| Electrochemical dynamics of nanoscale metallic inclusions in dielectrics Y Yang, P Gao, L Li, X Pan, S Tappertzhofen, SH Choi, R Waser, I Valov, ... Nature communications 5 (1), 4232, 2014 | 679 | 2014 |
| Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems A Wedig, M Luebben, DY Cho, M Moors, K Skaja, V Rana, T Hasegawa, ... Nature nanotechnology 11 (1), 67-74, 2016 | 633 | 2016 |
| Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019 | 626 | 2019 |
| Nanobatteries in redox-based resistive switches require extension of memristor theory I Valov, E Linn, S Tappertzhofen, S Schmelzer, J van den Hurk, F Lentz, ... Nature communications 4 (1), 1771, 2013 | 591 | 2013 |
| 2022 roadmap on neuromorphic computing and engineering DV Christensen, R Dittmann, B Linares-Barranco, A Sebastian, ... Neuromorphic Computing and Engineering 2 (2), 022501, 2022 | 451 | 2022 |
| Multibit memory operation of metal-oxide bi-layer memristors S Stathopoulos, A Khiat, M Trapatseli, S Cortese, A Serb, I Valov, ... Scientific reports 7 (1), 17532, 2017 | 331 | 2017 |
| Coexistence of grain‐boundaries‐assisted bipolar and threshold resistive switching in multilayer hexagonal boron nitride C Pan, Y Ji, N Xiao, F Hui, K Tang, Y Guo, X Xie, FM Puglisi, L Larcher, ... Advanced functional materials 27 (10), 1604811, 2017 | 324 | 2017 |
| Effects of moisture on the switching characteristics of oxide‐based, gapless‐type atomic switches T Tsuruoka, K Terabe, T Hasegawa, I Valov, R Waser, M Aono Advanced Functional Materials 22 (1), 70-77, 2012 | 302 | 2012 |
| Generic relevance of counter charges for cation-based nanoscale resistive switching memories S Tappertzhofen, I Valov, T Tsuruoka, T Hasegawa, R Waser, M Aono ACS nano 7 (7), 6396-6402, 2013 | 257 | 2013 |
| Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces I Valov, I Sapezanskaia, A Nayak, T Tsuruoka, T Bredow, T Hasegawa, ... Nature materials 11 (6), 530-535, 2012 | 256 | 2012 |
| Cation-based resistance change memory I Valov, MN Kozicki Journal of Physics D: Applied Physics 46 (7), 074005, 2013 | 231 | 2013 |
| Switching kinetics of electrochemical metallization memory cells S Menzel, S Tappertzhofen, R Waser, I Valov Physical Chemistry Chemical Physics 15 (18), 6945-6952, 2013 | 218 | 2013 |
| A chemically driven insulator–metal transition in non-stoichiometric and amorphous gallium oxide L Nagarajan, RA De Souza, D Samuelis, I Valov, A Börger, J Janek, ... Nature materials 7 (5), 391-398, 2008 | 214 | 2008 |
| Silicon Oxide (SiOx): A Promising Material for Resistance Switching? A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ... Advanced materials 30 (43), 1801187, 2018 | 206 | 2018 |
| Redox‐based resistive switching memories (ReRAMs): Electrochemical systems at the atomic scale I Valov ChemElectroChem 1 (1), 26-36, 2014 | 202 | 2014 |
| Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021 | 177 | 2021 |
| Redox Reactions at Cu,Ag/Ta2O5 Interfaces and the Effects of Ta2O5 Film Density on the Forming Process in Atomic Switch Structures T Tsuruoka, I Valov, S Tappertzhofen, J Van Den Hurk, T Hasegawa, ... Advanced functional materials 25 (40), 6374-6381, 2015 | 171 | 2015 |
| Quantum conductance and switching kinetics of AgI-based microcrossbar cells S Tappertzhofen, I Valov, R Waser Nanotechnology 23 (14), 145703, 2012 | 171 | 2012 |
| Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities G Milano, M Luebben, Z Ma, R Dunin-Borkowski, L Boarino, CF Pirri, ... Nature communications 9 (1), 5151, 2018 | 160 | 2018 |