Method for fabricating a semiconductor structure including a metal oxide interface with silicon J Ramdani, R Droopad, Z Yu
US Patent 6,709,989, 2004
662 2004 Field effect transistors with K Eisenbeiser, JM Finder, Z Yu, J Ramdani, JA Curless, JA Hallmark, ...
Applied Physics Letters 76 (10), 1324-1326, 2000
443 2000 Low OHMIC contacts containing germanium for gallium nitride or other nitride-based power devices J Ramdani
US Patent App. 12/927,948, 2011
296 2011 Textile fabric with integrated sensing device and clothing fabricated thereof MS Lebby, KE Jachimowicz, J Ramdani
US Patent 6,080,690, 2000
294 2000 Band discontinuities at epitaxial SA Chambers, Y Liang, Z Yu, R Droopad, J Ramdani, K Eisenbeiser
Applied Physics Letters 77 (11), 1662-1664, 2000
278 2000 Epitaxial oxide thin films on Si (001) Z Yu, J Ramdani, JA Curless, CD Overgaard, JM Finder, R Droopad, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
197 2000 Method of growing gallium nitride on a spinel substrate J Ramdani, MS Lebby, PM Holm
US Patent 5,741,724, 1998
172 1998 Semiconductor structure Z Yu, J Ramdani, R Droopad
US Patent 6,501,121, 2002
166 2002 Band offset and structure of SA Chambers, Y Liang, Z Yu, R Droopad, J Ramdani
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 19 (3 …, 2001
164 2001 Electro-optic structure and process for fabricating same J Ramdani, L Hilt, R Droopad, WJ Ooms
US Patent 6,493,497, 2002
160 2002 Optical properties of bulk and thin-film S Zollner, AA Demkov, R Liu, PL Fejes, RB Gregory, P Alluri, JA Curless, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
156 2000 Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same J Ramdani, R Droopad, LL Hilt, KW Eisenbeiser
US Patent 6,392,257, 2002
139 * 2002 Structure and method for fabricating semiconductor structures and devices not lattice matched to the substrate K Eisenbeiser, J Ramdani
US Patent App. 09/911,490, 2002
134 2002 Method for fabricating a semiconductor structure having a stable crystalline interface with silicon Z Yu, J Wang, R Droopad, J Ramdani
US Patent 6,291,319, 2001
116 2001 High-performance carbon nanotube transistors on SrTiO3/Si substrates BM Kim, T Brintlinger, E Cobas, MS Fuhrer, H Zheng, Z Yu, R Droopad, ...
Applied Physics Letters 84 (11), 1946-1948, 2004
113 2004 Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy Z Yu, J Ramdani, JA Curless, JM Finder, CD Overgaard, R Droopad, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
93 2000 Method of fabricating a semiconductor structure including a metal oxide interface J Ramdani, R Droopad, Z Yu
US Patent 6,319,730, 2001
76 2001 Development of high dielectric constant epitaxial oxides on silicon by molecular beam epitaxy R Droopad, Z Yu, J Ramdani, L Hilt, J Curless, C Overgaard, ...
Materials Science and Engineering: B 87 (3), 292-296, 2001
70 2001 Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication J Ramdani, MS Lebby, W Jiang
US Patent 5,835,521, 1998
69 1998 Apparatus for fabricating semiconductor structures and method of forming the structures R Droopad, Z Yu, W Ooms, J Ramdani
US Patent App. 09/780,119, 2001
66 2001 