Tsuyoshi HASEGAWA

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18 articoli

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Masakazu AONOMANA in NIMSEmail verificata su mth.biglobe.ne.jp
Kazuya TerabeNational Institute for Materials Science (NIMS) -MANAEmail verificata su nims.go.jp
Tohru TsuruokaNational Institute for Materials ScienceEmail verificata su nims.go.jp
Tomonobu NakayamaWPI-MANA, National Institute for Materials ScienceEmail verificata su nims.go.jp
James K. GimzewskiProfessor of Chemistry, UCLAEmail verificata su cnsi.ucla.edu
Ilia ValovResearch Centre Juelich, RWTH-AachenEmail verificata su fz-juelich.de
Alpana NayakIndian Institute of Technology PatnaEmail verificata su iitp.ac.in
Rainer WaserProfessur Elektronische Materialien, RWTH Aachen UniversityEmail verificata su iwe.rwth-aachen.de
Hirofumi TanakaKyushu Institute of TechnologyEmail verificata su brain.kyutech.ac.jp
Rui YangHuazhong University of Science and TechnologyEmail verificata su hust.edu.cn
Stefan TappertzhofenProfessor in Micro- and Nanoelectronics, TU Dortmund UniversityEmail verificata su tu-dortmund.de
Cedric MannequinCNRS-Nantes Université-Institut des Matériaux de Nantes Jean RouxelEmail verificata su cnrs-imn.fr
Katsuhiko ArigaWPI-MANA, National Institute for Materials Science (NIMS), Japan and The University of Tokyo, JapanEmail verificata su nims.go.jp
Jonathan P. HillNational Institute for Materials ScienceEmail verificata su nims.go.jp
Bilge YildizProfessor, Massachusetts Institute of TechnologyEmail verificata su mit.edu
Dr. Michael LübbenCarl Zeiss SMT GmbHEmail verificata su rwth-aachen.de
Swapan Kumar MandalDepartment of Physics, Visva-Bharati, SantiniketanEmail verificata su visva-bharati.ac.in
Minoru Osada, ProfessorInstitute of Materials and Systems for Sustainability (iMaSS), Nagoya UniversityEmail verificata su imass.nagoya-u.ac.jp
Harold M. H. ChongUniversity of SouthamptonEmail verificata su ecs.soton.ac.uk
Yoshishige TsuchiyaLecturer, University of SouthamptonEmail verificata su ecs.soton.ac.uk

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Tsuyoshi HASEGAWA

Professor, Dept. Applied Physics, Waseda University

Email verificata su waseda.jp

Nanoscience Nanodevices Neuromorphic systems


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses T Ohno, T Hasegawa, T Tsuruoka, K Terabe, JK Gimzewski, M Aono Nature materials 10 (8), 591-595, 2011	1797	2011
Quantized conductance atomic switch K Terabe, T Hasegawa, T Nakayama, M Aono Nature 433 (7021), 47-50, 2005	1513	2005
Nanometer-scale switches using copper sulfide T Sakamoto, H Sunamura, H Kawaura, T Hasegawa, T Nakayama, ... Applied Physics Letters 82 (18), 3032-3034, 2003	650	2003
Nanoscale cation motion in TaO x, HfO x and TiO x memristive systems A Wedig, M Luebben, DY Cho, M Moors, K Skaja, V Rana, T Hasegawa, ... Nature nanotechnology 11 (1), 67-74, 2016	633	2016
Atomic switch: Atom/ion movement controlled devices for beyond Von‐Neumann computers T Hasegawa, K Terabe, T Tsuruoka, M Aono Advanced Materials 24 (2), 252-267, 2012	421	2012
Learning abilities achieved by a single solid‐state atomic switch T Hasegawa, T Ohno, K Terabe, T Tsuruoka, T Nakayama, JK Gimzewski, ... Advanced materials 22 (16), 1831-1834, 2010	364	2010
Forming and switching mechanisms of a cation-migration-based oxide resistive memory T Tsuruoka, K Terabe, T Hasegawa, M Aono Nanotechnology 21 (42), 425205, 2010	362	2010
Effects of Moisture on the Switching Characteristics of Oxide‐Based, Gapless‐Type Atomic Switches T Tsuruoka, K Terabe, T Hasegawa, I Valov, R Waser, M Aono Advanced Functional Materials 22 (1), 70-77, 2012	302	2012
A nonvolatile programmable solid-electrolyte nanometer switch S Kaeriyama, T Sakamoto, H Sunamura, M Mizuno, H Kawaura, ... IEEE Journal of Solid-State Circuits 40 (1), 168-176, 2005	292	2005
Electronic transport in resistive switch T Sakamoto, K Lister, N Banno, T Hasegawa, K Terabe, M Aono Applied Physics Letters 91 (9), 092110, 2007	275	2007
Generic relevance of counter charges for cation-based nanoscale resistive switching memories S Tappertzhofen, I Valov, T Tsuruoka, T Hasegawa, R Waser, M Aono ACS nano 7 (7), 6396-6402, 2013	257	2013
Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces I Valov, I Sapezanskaia, A Nayak, T Tsuruoka, T Bredow, T Hasegawa, ... Nature materials 11 (6), 530-535, 2012	256	2012
Surface modification of MoS2 using an STM S Hosoki, S Hosaka, T Hasegawa Applied surface science 60, 643-647, 1992	233	1992
On-demand nanodevice with electrical and neuromorphic multifunction realized by local ion migration R Yang, K Terabe, G Liu, T Tsuruoka, T Hasegawa, JK Gimzewski, ... ACS nano 6 (11), 9515-9521, 2012	231	2012
Controlling the Synaptic Plasticity of a Cu₂S Gap‐Type Atomic Switch A Nayak, T Ohno, T Tsuruoka, K Terabe, T Hasegawa, JK Gimzewski, ... Advanced Functional Materials 22 (17), 3606-3613, 2012	198	2012
Conductance quantization and synaptic behavior in a Ta2O5-based atomic switch T Tsuruoka, T Hasegawa, K Terabe, M Aono Nanotechnology 23 (43), 435705, 2012	193	2012
Redox Reactions at Cu,Ag/Ta₂O₅ Interfaces and the Effects of Ta₂O₅ Film Density on the Forming Process in Atomic Switch Structures T Tsuruoka, I Valov, S Tappertzhofen, J van den Hurk, T Hasegawa, ... Advanced functional materials 25 (40), 6374-6381, 2015	171	2015
Synaptic plasticity and memory functions achieved in a WO3− x-based nanoionics device by using the principle of atomic switch operation R Yang, K Terabe, Y Yao, T Tsuruoka, T Hasegawa, JK Gimzewski, ... Nanotechnology 24 (38), 384003, 2013	164	2013
Formation and disappearance of a nanoscale silver cluster realized by solid electrochemical reaction K Terabe, T Nakayama, T Hasegawa, M Aono Journal of applied physics 91 (12), 10110-10114, 2002	162	2002
A polymer‐electrolyte‐based atomic switch S Wu, T Tsuruoka, K Terabe, T Hasegawa, JP Hill, K Ariga, M Aono Advanced Functional Materials 21 (1), 93-99, 2011	156	2011

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