Second-order optical response in semiconductors JE Sipe, AI Shkrebtii
Physical Review B 61 (8), 5337, 2000
885 2000 Reflectance anisotropy of GaAs (100): Theory and experiment AI Shkrebtii, N Esser, W Richter, WG Schmidt, F Bechstedt, BO Fimland, ...
Physical review letters 81 (3), 721, 1998
126 1998 Microscopic calculation of the optical properties of Si (100) 2× 1: Symmetric versus asymmetric dimers AI Shkrebtii, R Del Sole
Physical review letters 70 (17), 2645, 1993
119 1993 Ab initio study of structure and dynamics of the Si(100) surfaceAI Shkrebtii, R Di Felice, CM Bertoni, R Del Sole
Physical Review B 51 (16), 11201, 1995
104 1995 Quantum interference in electron-hole generation in noncentrosymmetric semiconductors JM Fraser, AI Shkrebtii, JE Sipe, HM Van Driel
Physical review letters 83 (20), 4192, 1999
85 1999 Correlation of InGaP (001) surface structure during growth and bulk ordering M Zorn, P Kurpas, AI Shkrebtii, B Junno, A Bhattacharya, K Knorr, ...
Physical Review B 60 (11), 8185, 1999
85 1999 Quantum interference control of currents in CdSe with a single optical beam N Laman, AI Shkrebtii, JE Sipe, HM Van Driel
Applied physics letters 75 (17), 2581-2583, 1999
84 1999 Theoretical and Experimental Optical Spectroscopy Study of Hydrogen Adsorption at Si(111)-( C Noguez, C Beitia, W Preyss, AI Shkrebtii, M Roy, Y Borensztein, ...
Physical review letters 76 (26), 4923, 1996
77 1996 Graphene and graphane functionalization with hydrogen: electronic and optical signatures AI Shkrebtii, E Heritage, P McNelles, JL Cabellos, BS Mendoza
physica status solidi c 9 (6), 1378-1383, 2012
58 2012 Atomic Structure of the Sb-Stabilized GaAs(100)-( N Esser, AI Shkrebtii, U Resch-Esser, C Springer, W Richter, WG Schmidt, ...
Physical review letters 77 (21), 4402, 1996
54 1996 Sensitivity of reflectance anisotropy spectroscopy to the orientation of Ge dimers on vicinal Si (001) JR Power, P Weightman, S Bose, AI Shkrebtii, R Del Sole
Physical review letters 80 (14), 3133, 1998
53 1998 Structural and electronic properties of the (111) 2× 1 surface of Ge from first-principles calculations N Takeuchi, A Selloni, AI Shkrebtii, E Tosatti
Physical Review B 44 (24), 13611, 1991
49 1991 Temperature dependence of the optical response: Application to bulk GaAs using first-principles molecular dynamics simulations ZA Ibrahim, AI Shkrebtii, MJG Lee, K Vynck, T Teatro, W Richter, T Trepk, ...
Physical Review B—Condensed Matter and Materials Physics 77 (12), 125218, 2008
47 2008 Structural models of reconstructed Si (110) surface phases AI Shkrebtii, CM Bertoni, R Del Sole, BA Nesterenko
Surface science 239 (3), 227-234, 1990
45 1990 Reflectance anisotropy spectroscopy of ordered Sb overlayers on GaAs (110) and InP (110) N Esser, R Hunger, J Rumberg, W Richter, R Del Sole, AI Shkrebtii
Surface science 307, 1045-1050, 1994
40 1994 The silicon (110) surface: Possible structural models BA Nesterenko, AI Shkrebtii
Surface Science 213 (2-3), 309-315, 1989
36 1989 Surface reflectance anisotropy of C (100) and Si (100) ab initio calculations within the pseudopotential plane wave approach C Kress, A Shkrebtii, R Del Sole
Surface science 377, 398-403, 1997
35 1997 Ab initio calculation of the reflectance anisotropy of GaAs(110)O Pulci, G Onida, R Del Sole, AJ Shkrebtii
Physical Review B 58 (4), 1922, 1998
34 1998 Theory of optical reflectance anisotropy of the natural Si (110) surface BS Mendoza, R Del Sole, AI Shkrebtii
Physical Review B 57 (20), R12709, 1998
34 1998 Efficiency analysis of betavoltaic elements AV Sachenko, AI Shkrebtii, RM Korkishko, VP Kostylyov, MR Kulish, ...
Solid-State Electronics 111, 147-152, 2015
32 2015 