| Quantum wells and the generalized uncertainty principle G Blado, C Owens, V Meyers European Journal of Physics 35 (6), 065011, 2014 | 36 | 2014 |
| p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing V Meyers, E Rocco, TJ Anderson, JC Gallagher, MA Ebrish, K Jones, ... Journal of Applied Physics 128 (8), 2020 | 23 | 2020 |
| Hillock assisted p-type enhancement in N-polar GaN: Mg films grown by MOCVD E Rocco, O Licata, I Mahaboob, K Hogan, S Tozier, V Meyers, B McEwen, ... Scientific Reports 10 (1), 1426, 2020 | 23 | 2020 |
| MOCVD Growth and Characterization of Be-Doped GaN B McEwen, MA Reshchikov, E Rocco, V Meyers, K Hogan, O Andrieiev, ... ACS Applied Electronic Materials 4 (8), 3780-3785, 2022 | 13 | 2022 |
| Evaluation of GaN: Fe as a high voltage photoconductive semiconductor switch for pulsed power applications D Mauch, J Dickens, V Kuryatkov, V Meyers, R Ness, S Nikishin, ... 2015 IEEE Pulsed Power Conference (PPC), 1-4, 2015 | 12 | 2015 |
| Thermal annealing of GaN implanted with Be MA Reshchikov, O Andrieiev, M Vorobiov, D Ye, DO Demchenko, ... Journal of Applied Physics 131 (12), 2022 | 10 | 2022 |
| P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing V Meyers, E Rocco, K Hogan, B McEwen, M Shevelev, V Sklyar, K Jones, ... Journal of Applied Physics 130 (8), 2021 | 10 | 2021 |
| Toward the development of an efficient bulk semi-insulating GaN photoconductive switch V Meyers, D Mauch, V Kuryatkov, S Nikishin, J Dickens, A Neuber, ... 2017 IEEE 21st International Conference on Pulsed Power (PPC), 1-4, 2017 | 10 | 2017 |
| Characterization of the optical properties of GaN: Fe for high voltage photoconductive switch applications V Meyers, D Mauch, J Mankowski, J Dickens, A Neuber 2015 IEEE Pulsed Power Conference (PPC), 1-4, 2015 | 9 | 2015 |
| Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition MA Reshchikov, M Vorobiov, O Andrieiev, B McEwen, E Rocco, V Meyers, ... physica status solidi (b) 260 (8), 2200487, 2023 | 7 | 2023 |
| Removal of Dry-Etch-Induced Surface Layer Damage from p-GaN by Photoelectrochemical Etching V Meyers, E Rocco, K Hogan, S Tozier, B McEwen, I Mahaboob, ... Journal of Electronic Materials 49, 3481-3489, 2020 | 7 | 2020 |
| Nonlinear UV absorption properties of bulk 4H-SiC V Meyers, D Mauch, J Dickens, A Neuber Journal of Applied Physics 121 (11), 2017 | 7 | 2017 |
| Investigation of the Effects of Forming Gas Annealing on Al2O3/GaN Interface B McEwen, I Mahaboob, E Rocco, K Hogan, V Meyers, R Green, ... Journal of Electronic Materials 50, 80-84, 2021 | 6 | 2021 |
| Laser ablation on lithium-ion battery electrode solid electrolyte interface removal Y Zhang, Y Zhang, Z Liu, D Guan, F Wang, V Meyers, C Yuan, A Neuber, ... Journal of Laser Applications 29 (4), 2017 | 6 | 2017 |
| Impurity incorporation and diffusion from regrowth interfaces in N-polar GaN photocathodes and the impact on quantum efficiency E Rocco, I Mahaboob, K Hogan, V Meyers, B McEwen, LD Bell, ... Journal of Applied Physics 129 (19), 2021 | 5 | 2021 |
| Defect-mediated diffusion of implanted Mg in GaN: Suppressing dopant redistribution by sequential thermal and microwave annealing V Meyers, E Rocco, B McEwen, M Shevelev, V Sklyar, ... Journal of Applied Physics 133 (15), 2023 | 3 | 2023 |
| In operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application K Hogan, M Rodriguez, E Rocco, V Meyers, B McEwen, ... AIP Advances 10 (8), 2020 | 3 | 2020 |
| Novel gyrotron beam annealing method for Mg-implanted bulk GaN K Hogan, S Tozier, E Rocco, I Mahaboob, V Meyers, B McEwen, ... 2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019 | 3 | 2019 |
| Structural, morphological, optical and electrical properties of bulk (0001) GaN: Fe Wafers M Gaddy, V Kuryatkov, V Meyers, D Mauch, J Dickens, A Neuber, ... MRS Advances 3, 179-184, 2018 | 3 | 2018 |
| Pulsed characterization of a UV LED for pulsed power applications on a silicon carbide photoconductive semiconductor switch N Wilson, D Mauch, V Meyers, S Feathers, J Dickens, A Neuber Review of Scientific Instruments 88 (8), 2017 | 3 | 2017 |
F. Shadi Shahedipour-SandvikSUNY College of Nanoscale Science and EngineeringEmail verificata su sunypoly.edu