| Carbon nanomaterials for next-generation interconnects and passives: physics, status, and prospects H Li, C Xu, N Srivastava, K Banerjee Electron Devices, IEEE Transactions on 56 (9), 1799-1821, 2009 | 548 | 2009 |
| Modeling, analysis, and design of graphene nano-ribbon interconnects C Xu, H Li, K Banerjee Electron Devices, IEEE Transactions on 56 (8), 1567-1578, 2009 | 458 | 2009 |
| Circuit modeling and performance analysis of multi-walled carbon nanotube interconnects H Li, WY Yin, K Banerjee, JF Mao Electron Devices, IEEE Transactions on 55 (6), 1328-1337, 2008 | 454 | 2008 |
| Synthesis of high-quality monolayer and bilayer graphene on copper using chemical vapor deposition W Liu, H Li, C Xu, Y Khatami, K Banerjee Carbon 49 (13), 4122-4130, 2011 | 423 | 2011 |
| Compact AC modeling and performance analysis of through-silicon vias in 3-D ICs C Xu, H Li, R Suaya, K Banerjee Electron Devices, IEEE Transactions on 57 (12), 3405-3417, 2010 | 309 | 2010 |
| On the applicability of single-walled carbon nanotubes as VLSI interconnects N Srivastava, H Li, F Kreupl, K Banerjee Nanotechnology, IEEE Transactions on 8 (4), 542-559, 2009 | 247 | 2009 |
| High-frequency analysis of carbon nanotube interconnects and implications for on-chip inductor design H Li, K Banerjee Electron Devices, IEEE Transactions on 56 (10), 2202-2214, 2009 | 195 | 2009 |
| Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene using Chemical Vapor Deposition W Liu, S Kraemer, D Sarkar, H Li, PM Ajayan, K Banerjee Chemistry of Materials 26 (2), 907-915, 2013 | 159 | 2013 |
| Carbon nanomaterials: The ideal interconnect technology for next-generation ics H Li, C Xu, K Banerjee Design & Test of Computers, IEEE 27 (4), 20-31, 2010 | 123 | 2010 |
| High-frequency behavior of graphene-based interconnects—Part I: Impedance modeling D Sarkar, C Xu, H Li, K Banerjee Electron Devices, IEEE Transactions on 58 (3), 843-852, 2011 | 88 | 2011 |
| Metal-to-multilayer-graphene contact—Part I: Contact resistance modeling Y Khatami, H Li, C Xu, K Banerjee Electron Devices, IEEE Transactions on 59 (9), 2444-2452, 2012 | 78 | 2012 |
| Graphene nano-ribbon (GNR) interconnects: A genuine contender or a delusive dream? C Xu, H Li, K Banerjee Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008 | 75 | 2008 |
| High-frequency behavior of graphene-based interconnects—Part II: Impedance analysis and implications for inductor design D Sarkar, C Xu, H Li, K Banerjee Electron Devices, IEEE Transactions on 58 (3), 853-859, 2011 | 69 | 2011 |
| Process integration of a 27nm, 16Gb Cu ReRAM J Zahurak, K Miyata, M Fischer, M Balakrishnan, S Chhajed, D Wells, H Li, ... Electron Devices Meeting (IEDM), 2014 IEEE International, 6.2. 1-6.2. 4, 2014 | 66 | 2014 |
| Compact AC modeling and analysis of Cu, W, and CNT based through-silicon vias (TSVs) in 3-D ICs C Xu, H Li, R Suaya, K Banerjee Electron Devices Meeting (IEDM), 2009 IEEE International, 1-4, 2009 | 65 | 2009 |
| Current status and future perspectives of carbon nanotube interconnects K Banerjee, H Li, N Srivastava Nanotechnology, 2008. NANO'08. 8th IEEE Conference on, 432-436, 2008 | 64 | 2008 |
| Carbon Nanotube Vias: Does Ballistic Electron–Phonon Transport Imply Improved Performance and Reliability? H Li, N Srivastava, JF Mao, WY Yin, K Banerjee Electron Devices, IEEE Transactions on 58 (8), 2689-2701, 2011 | 46 | 2011 |
| Accurate intrinsic gate capacitance model for carbon nanotube-array based FETs considering screening effect C Kshirsagar, H Li, TE Kopley, K Banerjee Electron Device Letters, IEEE 29 (12), 1408-1411, 2008 | 43 | 2008 |
| Modeling of carbon nanotube interconnects and comparative analysis with Cu interconnects H Li, WY Yin, JF Mao Microwave Conference, 2006. APMC 2006. Asia-Pacific, 1361-1364, 2006 | 43 | 2006 |
| Metal-to-multilayer-graphene contact—Part II: Analysis of contact resistance Y Khatami, H Li, C Xu, K Banerjee Electron Devices, IEEE Transactions on 59 (9), 2453-2460, 2012 | 38 | 2012 |