Accesso pubblico

Photoluminescence from ZnO nanowires

MA Reshchikov, A Behrends, A Bakin, A Waag

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2009

Mandati: German Research Foundation

On quantum efficiency of photoluminescence in ZnO layers and nanostructures

MA Reshchikov, A El-Shaer, A Behrends, A Bakin, A Waag

Physica B: Condensed Matter 404 (23-24), 4813-4815, 2009

Mandati: German Research Foundation

Novel gyrotron beam annealing method for Mg-implanted bulk GaN

K Hogan, S Tozier, E Rocco, I Mahaboob, V Meyers, B McEwen, ...

2019 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2019

Mandati: US Department of Energy

Disponibili pubblicamente: 37

Measurement and analysis of photoluminescence in GaN

MA Reshchikov

Journal of applied physics 129 (12), 2021

Mandati: US National Science Foundation

Two charge states of the acceptor in GaN: Evidence from photoluminescence

MA Reshchikov, M Vorobiov, DO Demchenko, Ü Özgür, H Morkoç, ...

Physical Review B 98 (12), 125207, 2018

Mandati: US National Science Foundation

Magnesium acceptor in gallium nitride. I. Photoluminescence from Mg-doped GaN

MA Reshchikov, P Ghimire, DO Demchenko

Physical Review B 97 (20), 205204, 2018

Mandati: US National Science Foundation

Two yellow luminescence bands in undoped GaN

MA Reshchikov, JD McNamara, H Helava, A Usikov, Y Makarov

Scientific reports 8 (1), 8091, 2018

Mandati: US National Science Foundation

Hydrogen-carbon complexes and the blue luminescence band in GaN

DO Demchenko, IC Diallo, MA Reshchikov

Journal of Applied Physics 119 (3), 2016

Mandati: US National Science Foundation

Evaluation of the concentration of point defects in GaN

MA Reshchikov, A Usikov, H Helava, Y Makarov, V Prozheeva, ...

Scientific Reports 7 (1), 9297, 2017

Mandati: US National Science Foundation

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Mechanisms of thermal quenching of defect‐related luminescence in semiconductors

MA Reshchikov

physica status solidi (a) 218 (1), 2000101, 2021

Mandati: US National Science Foundation

Zero-phonon line and fine structure of the yellow luminescence band in GaN

MA Reshchikov, JD McNamara, F Zhang, M Monavarian, A Usikov, ...

Physical Review B 94 (3), 035201, 2016

Mandati: US National Science Foundation

Thermal quenching of the yellow luminescence in GaN

MA Reshchikov, NM Albarakati, M Monavarian, V Avrutin, H Morkoç

Journal of Applied Physics 123 (16), 2018

Mandati: US National Science Foundation

Determination of the electron-capture coefficients and the concentration of free electrons in GaN from time-resolved photoluminescence

MA Reshchikov, JD McNamara, M Toporkov, V Avrutin, H Morkoç, ...

Scientific reports 6 (1), 37511, 2016

Mandati: US National Science Foundation

Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry

MA Reshchikov, M Vorobiov, O Andrieiev, K Ding, N Izyumskaya, ...

Scientific Reports 10 (1), 2223, 2020

Mandati: US National Science Foundation

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Point Defects in GaN

MA Reshchikov

Semiconductors and Semimetals 111, 153-205, 2022

Mandati: US National Science Foundation

Giant shifts of photoluminescence bands in GaN

MA Reshchikov

Journal of Applied Physics 127 (5), 2020

Mandati: US National Science Foundation

Shallow and deep states of beryllium acceptor in GaN: Why photoluminescence experiments do not reveal small polarons for defects in semiconductors

DO Demchenko, M Vorobiov, O Andrieiev, TH Myers, MA Reshchikov

Physical Review Letters 126 (2), 027401, 2021

Mandati: US National Science Foundation

Hillock assisted p-type enhancement in N-polar GaN: Mg films grown by MOCVD

E Rocco, O Licata, I Mahaboob, K Hogan, S Tozier, V Meyers, B McEwen, ...

Scientific Reports 10 (1), 1426, 2020

Mandati: US National Aeronautics and Space Administration

Optically generated giant traps in high-purity GaN

MA Reshchikov, JD McNamara, A Usikov, H Helava, Y Makarov

Physical Review B 93 (8), 081202, 2016

Mandati: US National Science Foundation

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