Articoli con mandati relativi all'accesso pubblico - Yann-Michel NiquetUlteriori informazioni
Non disponibili pubblicamente: 13
Carrier scattering in high-κ/metal gate stacks
Z Zeng, F Triozon, YM Niquet
Journal of Applied Physics 121 (11), 2017
Mandati: European Commission
Challenges and perspectives in the modeling of spin qubits
YM Niquet, L Hutin, BM Diaz, B Venitucci, J Li, V Michal, ...
2020 IEEE International Electron Devices Meeting (IEDM), 30.1. 1-30.1. 4, 2020
Mandati: European Commission, Agence Nationale de la Recherche
The coupled atom transistor
X Jehl, B Voisin, B Roche, E Dupont-Ferrier, S De Franceschi, M Sanquer, ...
Journal of Physics: Condensed Matter 27 (15), 154206, 2015
Mandati: European Commission
Highly strained direct bandgap Germanium cavities for a monolithic laser on Si
T Zabel, E Marin, R Geiger, C Bozon, S Tardif, K Guilloy, A Gassenq, ...
2016 IEEE 13th International Conference on Group IV Photonics (GFP), 40-41, 2016
Mandati: Swiss National Science Foundation
Tunnel and capacitive coupling optimization in FDSOI spin-qubit devices
B Bertrand, B Martinez, J Li, BC Paz, V Millory, V Labracherie, L Brevard, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
Mandati: European Commission
Methodology for an efficient characterization flow of industrial grade Si-based qubit devices
LC Contamin, BC Paz, BM Diaz, B Bertrand, H Niebojewski, ...
2022 International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2022
Mandati: European Commission
An improved mobility model for FDSOI TriGate and other multi-gate nanowire MOSFETs down to nanometer-scaled dimensions
M Casse, J Pelloux-Prayer, Z Zeng, YM Niquet, F Triozon, S Barraud, ...
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference …, 2017
Mandati: European Commission
Development of spin quantum bits in SOI CMOS technology
B Bertrand, L Hutin, L Bourdet, A Corna, B Jadot, H Bohuslavskvi, ...
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-3, 2018
Mandati: European Commission
Variability in Si/SiGe and Si/SiO2 Spin Qubits due to Interfacial Disorder
L Cvitkovich, B Sklénard, D Waldhör, J Li, C Wilhelmer, G Veste, ...
2023 International Conference on Simulation of Semiconductor Processes and …, 2023
Mandati: European Commission
Steady state lasing in strained germanium microbridges as fundamental measure for the crossover to direct band gap
FTA Pilon, YM Niquet, J Chretien, N Pauc, V Reboud, V Calvo, J Widiez, ...
2021 IEEE 17th International Conference on Group IV Photonics (GFP), 1-2, 2021
Mandati: US National Science Foundation, Swiss National Science Foundation
Dispersive vs charge-sensing readout for linear quantum registers
A Aprà, A Crippa, MLV Tagliaferri, J Li, R Ezzouch, B Bertrand, L Hutin, ...
2020 IEEE International Electron Devices Meeting (IEDM), 38.4. 1-38.4. 4, 2020
Mandati: European Commission, Agence Nationale de la Recherche
Carrier mobilities and contact resistances in nanowire devices
YM Niquet, L Bourdet, Z Zeng, F Triozon
2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 1-2, 2018
Mandati: Governo Italiano
From Electron Pumps to Spin Quantum Bits in Silicon
X Jehl, R Maurand, A Crippa, A Corna, YM Niquet, B Bertrand, L Hutin, ...
2018 Conference on Precision Electromagnetic Measurements (CPEM 2018), 1-2, 2018
Mandati: European Commission
Disponibili pubblicamente: 71
Lasing in strained germanium microbridges
FT Armand Pilon, A Lyasota, YM Niquet, V Reboud, V Calvo, N Pauc, ...
Nature communications 10 (1), 2724, 2019
Mandati: Swiss National Science Foundation
Electrical Spin Driving by -Matrix Modulation in Spin-Orbit Qubits
A Crippa, R Maurand, L Bourdet, D Kotekar-Patil, A Amisse, X Jehl, ...
Physical review letters 120 (13), 137702, 2018
Mandati: European Commission
Few-electron edge-state quantum dots in a silicon nanowire field-effect transistor
B Voisin, VH Nguyen, J Renard, X Jehl, S Barraud, F Triozon, M Vinet, ...
Nano letters 14 (4), 2094-2098, 2014
Mandati: European Commission
Electrically driven electron spin resonance mediated by spin–valley–orbit coupling in a silicon quantum dot
A Corna, L Bourdet, R Maurand, A Crippa, D Kotekar-Patil, ...
npj quantum information 4 (1), 6, 2018
Mandati: European Commission, Governo Italiano
A single hole spin with enhanced coherence in natural silicon
N Piot, B Brun, V Schmitt, S Zihlmann, VP Michal, A Apra, ...
Nature Nanotechnology 17 (10), 1072-1077, 2022
Mandati: European Commission, Agence Nationale de la Recherche
Atomistic boron-doped graphene field-effect transistors: a route toward unipolar characteristics
P Marconcini, A Cresti, F Triozon, G Fiori, B Biel, YM Niquet, M Macucci, ...
ACS nano 6 (9), 7942-7947, 2012
Mandati: Government of Spain
Charge detection in an array of CMOS quantum dots
E Chanrion, DJ Niegemann, B Bertrand, C Spence, B Jadot, J Li, ...
Physical Review Applied 14 (2), 024066, 2020
Mandati: Agence Nationale de la Recherche
Le informazioni sulla pubblicazione e sul finanziamento vengono stabilite automaticamente da un software