| Method for making semiconductor device including band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,830,964, 2004 | 149 | 2004 |
| Semiconductor device including band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,958,486, 2005 | 117 | 2005 |
| Method for making semiconductor device including band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,833,294, 2004 | 111 | 2004 |
| Method for making an electronic device including a poled superlattice having a net electrical dipole moment S Halilov, X Huang, I Dukovski, JACSF Yiptong, RJ Mears, M Hytha, ... US Patent 7,517,702, 2009 | 108 | 2009 |
| Multiple-wavelength opto-electronic device including a superlattice RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ... US Patent 8,389,974, 2013 | 107 | 2013 |
| Method for making a semiconductor device comprising a superlattice dielectric interface layer RJ Mears, M Hytha, SA Kreps, RJ Stephenson, JACSF Yiptong, ... US Patent 7,446,002, 2008 | 107 | 2008 |
| Semiconductor device including MOSFET having band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,897,472, 2005 | 105 | 2005 |
| Semiconductor device including band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,891,188, 2005 | 105 | 2005 |
| Spintronic devices with constrained spintronic dopant X Huang, S Halilov, JA Yiptong, I Dukovski, M Hytha, R Mears US Patent App. 11/687,422, 2008 | 103 | 2008 |
| Method for making a semiconductor device including band-engineered superlattice using intermediate annealing M Hytha, RJ Stephenson, SA Kreps US Patent 7,153,763, 2006 | 103 | 2006 |
| Method for making a multiple-wavelength opto-electronic device including a superlattice RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ... US Patent 7,863,066, 2011 | 102 | 2011 |
| Semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 7,435,988, 2008 | 102 | 2008 |
| Method for Making a Semiconductor Device Including a Channel with a Non-Semiconductor Layer Monolayer R Mears, M Hytha, S Kreps US Patent App. 11/457,315, 2007 | 102 | 2007 |
| Multiple-wavelength opto-electronic device including a superlattice RJ Mears, RJ Stephenson, M Hytha, I Dukovski, JACSF Yiptong, S Halilov, ... US Patent 7,880,161, 2011 | 101 | 2011 |
| Semiconductor device including a dopant blocking superlattice R Stephenson, M Hytha US Patent App. 11/380,987, 2006 | 101 | 2006 |
| Semiconductor device including band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 6,952,018, 2005 | 100 | 2005 |
| Methods of making spintronic devices with constrained spintronic dopant X Huang, S Halilov, JACSF Yiptong, I Dukovski, M Hytha, RJ Mears US Patent 7,625,767, 2009 | 99 | 2009 |
| Method for making a semiconductor device comprising a lattice matching layer I Dukovski, RJ Stephenson, JACSF Yiptong, S Halilov, RJ Mears, ... US Patent 7,700,447, 2010 | 98 | 2010 |
| Semiconductor device including MOSFET having band-engineered superlattice RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 7,303,948, 2007 | 98 | 2007 |
| Method for making a semiconductor device including a MOSFET having a band-engineered superlattice with a semiconductor cap layer providing a channel RJ Mears, JACSF Yiptong, M Hytha, SA Kreps, I Dukovski US Patent 7,265,002, 2007 | 98 | 2007 |
