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Vadym Tsybulenko
Vadym Tsybulenko
V.E. Lashkaryov Institute of Semiconductor Physics NAS of Ukraine
Email verificata su isp.kiev.ua
Titolo
Citata da
Citata da
Anno
Solar cells heterostructures with InAs quantum dots obtained by liquid phase epitaxy
IE Maronchuk, SY Erochin, TF Kulutkina, VV Kurak, AI Maronchuk, ...
3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of …, 2003
112003
LPE application technique for obtaining of thin film semiconductor compounds
V Tsybulenko, S Shutov, S Yerochin
Proceedings 2 (14), 1116, 2018
42018
Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method
VV Tsybulenko, SV Shutov, SY Yerochin
Semiconductor Physics, Quantum Electronics & Optoelectronics 23 (3), 294-301, 2020
12020
Analysis of conditions for obtaining thin and ultrathin epitaxial layers by liquid-phase epitaxy
VV Tsybulenko, SV Shutov, AI Maronchuk
Современные информационные и электронные технологии 2 (15), 132-133, 2014
12014
Нанесення омічного контакту Al/SnAl на кремній з рідинної фази
VV Tsybulenko, SV Shutov, OO Boskin
KPI Science News, 2021
2021
ОСОБЛИВОСТІ ВИКОРИСТАННЯ МEТОДУ СКАНУЮЧОЇ РІДИННОФАЗОВОЇ ЕПІТАКСІЇ ДЛЯ ВИРОЩУВАННЯ ТОВСТИХ ЕПІТАКСІЙНИХ ШАРІВ
VV Tsybulenko, SV Shutov, OO Boskin
KPI Science News, 58-64, 2020
2020
Simulation of Growth of Graded Bandgap Solid Solutions of GaAsxP1-x at Liquid Phase Electroepitaxy
VV Tsybulenko, YA Baganov, VA Krasnov, SV Shutov
arXiv preprint arXiv:0808.1229, 2008
2008
Simulation of growth of graded bandgap GaAsP layers at liquid phase electroepitaxy
V Tsybulenko, Y Baganov, V Krasnov, S Shutov
Functional Materials, 2008
2008
PHOTOELECTRIC TRANSDICERS OF SOLAR ENERGY BASED ON GaAs WITH InAs OUANTUM DOTS
IE Maronchuk, YA Dobrozhanskiy, VV Tsybulenko, AG Voronin
Photoelectronics, 112-115, 2007
2007
USING OF NANOSCALE STRUCTURES IN GaAs SOLAR CELLS
I Maronchuk, T Kulutkina, V Kurak, V Tsybulenko
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–10