| Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures GH Lee, YJ Yu, X Cui, N Petrone, CH Lee, MS Choi, DY Lee, C Lee, ... ACS nano 7 (9), 7931-7936, 2013 | 1254 | 2013 |
| High-performance perovskite-graphene hybrid photodetector. Y Lee, J Kwon, E Hwang, CH Ra, WJ Yoo, JH Ahn, JH Park, JH Cho Advanced Materials (Deerfield Beach, Fla.) 27 (1), 41-46, 2014 | 896 | 2014 |
| Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides C Kim, I Moon, D Lee, MS Choi, F Ahmed, S Nam, Y Cho, HJ Shin, S Park, ... ACS nano 11 (2), 1588-1596, 2017 | 828 | 2017 |
| Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices M Sup Choi, GH Lee, YJ Yu, DY Lee, S Hwan Lee, P Kim, J Hone, ... Nature communications 4 (1), 1624, 2013 | 789 | 2013 |
| Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics MS Choi, D Qu, D Lee, X Liu, K Watanabe, T Taniguchi, WJ Yoo ACS nano 8 (9), 9332-9340, 2014 | 589 | 2014 |
| Highly stretchable piezoelectric‐pyroelectric hybrid nanogenerator JH Lee, KY Lee, MK Gupta, TY Kim, DY Lee, J Oh, C Ryu, WJ Yoo, ... Advanced Materials 26 (5), 765-769, 2014 | 586 | 2014 |
| Ultimate thin vertical p–n junction composed of two-dimensional layered molybdenum disulfide HM Li, D Lee, D Qu, X Liu, J Ryu, A Seabaugh, WJ Yoo Nature communications 6 (1), 6564, 2015 | 371 | 2015 |
| P-type polar transition of chemically doped multilayer MoS2 transistor X Liu, D Qu, J Ryu, F Ahmed, Z Yang, D Lee, WJ Yoo arXiv preprint arXiv:1604.08162, 2015 | 254 | 2015 |
| Transferred via contacts as a platform for ideal two-dimensional transistors Y Jung, MS Choi, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ... Nature Electronics 2 (5), 187-194, 2019 | 249 | 2019 |
| Colossal grain growth yields single-crystal metal foils by contact-free annealing S Jin, M Huang, Y Kwon, L Zhang, BW Li, S Oh, J Dong, D Luo, M Biswal, ... Science 362 (6418), 1021-1025, 2018 | 228 | 2018 |
| A Fermi‐Level‐Pinning‐Free 1D Electrical Contact at the Intrinsic 2D MoS2–Metal Junction Z Yang, C Kim, KY Lee, M Lee, S Appalakondaiah, CH Ra, K Watanabe, ... Advanced Materials 31 (25), 1808231, 2019 | 222 | 2019 |
| Carrier‐Type Modulation and Mobility Improvement of Thin MoTe2 D Qu, X Liu, M Huang, C Lee, F Ahmed, H Kim, RS Ruoff, J Hone, WJ Yoo Advanced Materials 29 (39), 1606433, 2017 | 199 | 2017 |
| Large-area single-crystal AB-bilayer and ABA-trilayer graphene grown on a Cu/Ni (111) foil M Huang, PV Bakharev, ZJ Wang, M Biswal, Z Yang, S Jin, B Wang, ... Nature nanotechnology 15 (4), 289-295, 2020 | 195 | 2020 |
| Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee, Y Choi, JH Cho, ... ACS nano 11 (9), 9143-9150, 2017 | 192 | 2017 |
| Fermi level pinning dependent 2D semiconductor devices: challenges and prospects X Liu, MS Choi, E Hwang, WJ Yoo, J Sun Advanced Materials 34 (15), 2108425, 2022 | 174 | 2022 |
| Electrical characterization of 2D materials-based field-effect transistors SB Mitta, MS Choi, A Nipane, F Ali, C Kim, JT Teherani, J Hone, WJ Yoo 2D Materials 8 (1), 012002, 2020 | 167 | 2020 |
| Highly oriented monolayer graphene grown on a Cu/Ni (111) alloy foil M Huang, M Biswal, HJ Park, S Jin, D Qu, S Hong, Z Zhu, L Qiu, D Luo, ... Acs Nano 12 (6), 6117-6127, 2018 | 164 | 2018 |
| Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO high-/spl kappa/tunneling and control oxides: Device fabrication and electrical performance JH Chen, YQ Wang, WJ Yoo, YC Yeo, G Samudra, DSH Chan, AY Du, ... IEEE transactions on electron devices 51 (11), 1840-1848, 2004 | 158 | 2004 |
| Patterning metal contacts on monolayer MoS2 with vanishing Schottky barriers using thermal nanolithography X Zheng, A Calò, E Albisetti, X Liu, ASM Alharbi, G Arefe, X Liu, M Spieser, ... Nature Electronics 2 (1), 17-25, 2019 | 156 | 2019 |
| Metal-semiconductor barrier modulation for high photoresponse in transition metal dichalcogenide field effect transistors HM Li, DY Lee, MS Choi, D Qu, X Liu, CH Ra, WJ Yoo Scientific reports 4 (1), 4041, 2014 | 142 | 2014 |
Min Sup ChoiDepartment of Materials Science and Engineering, Chungnam National UniversityEmail verificata su cnu.ac.kr