| Eight-band k⋅ p calculations of the composition contrast effect on the linear polarization properties of columnar quantum dots J Andrzejewski, G Sęk, E O’Reilly, A Fiore, J Misiewicz Journal of Applied Physics 107 (7), 2010 | 53 | 2010 |
| The energy-fine structure of GaInNAs∕ GaAs multiple quantum wells grown at different temperatures and postgrown annealed R Kudrawiec, EM Pavelescu, J Andrzejewski, J Misiewicz, A Gheorghiu, ... Journal of applied physics 96 (5), 2909-2913, 2004 | 37 | 2004 |
| Energy Band Structure of Zn3P2‐Type Semiconductors: Analysis of the Crystal Structure Simplifications and Energy Band Calculations J Andrzejewski, J Misiewicz physica status solidi (b) 227 (2), 515-540, 2001 | 37 | 2001 |
| Wetting layer states of InAs∕ GaAs self-assembled quantum dot structures: Effect of intermixing and capping layer G Sęk, K Ryczko, M Motyka, J Andrzejewski, K Wysocka, J Misiewicz, ... Journal of applied physics 101 (6), 2007 | 35 | 2007 |
| Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy A Maryński, G Sęk, A Musiał, J Andrzejewski, J Misiewicz, C Gilfert, ... Journal of Applied Physics 114 (9), 2013 | 33 | 2013 |
| Phonon-assisted radiative recombination of excitons confined in strongly anisotropic nanostructures Ł Dusanowski, A Musiał, A Maryński, P Mrowiński, J Andrzejewski, ... Physical Review B 90 (12), 125424, 2014 | 31 | 2014 |
| Carrier relaxation dynamics in InAs/GaInAsP/InP (001) quantum dashes emitting near 1.55 μm M Syperek, Ł Dusanowski, J Andrzejewski, W Rudno-Rudziński, G Sȩk, ... Applied Physics Letters 103 (8), 2013 | 30 | 2013 |
| Influence of electronic coupling on the radiative lifetime in the (In, Ga) As/GaAs quantum dot–quantum well system M Syperek, J Andrzejewski, W Rudno-Rudziński, G Sęk, J Misiewicz, ... Physical Review B—Condensed Matter and Materials Physics 85 (12), 125311, 2012 | 29 | 2012 |
| Polarization properties of columnar quantum dots: effects of aspect ratio and compositional contrast P Ridha, LH Li, M Mexis, PM Smowton, J Andrzejewski, G Sek, ... IEEE journal of quantum electronics 46 (2), 197-204, 2009 | 28 | 2009 |
| Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and elongated … A Musiał, P Gold, J Andrzejewski, A Löffler, J Misiewicz, S Höfling, ... Physical Review B 90 (4), 045430, 2014 | 27 | 2014 |
| Controlling the aspect ratio of quantum dots: from columnar dots to quantum rods L Li, G Patriarche, N Chauvin, P Ridha, M Rossetti, J Andrzejewski, G Sek, ... IEEE Journal of Selected Topics in Quantum Electronics 14 (4), 1204-1213, 2008 | 24 | 2008 |
| Height-driven linear polarization of the surface emission from quantum dashes A Musiał, P Podemski, G Sęk, P Kaczmarkiewicz, J Andrzejewski, ... Semiconductor Science and Technology 27 (10), 105022, 2012 | 23 | 2012 |
| Electron-irradiation enhanced photoluminescence from GaInNAs∕ GaAs quantum wells subject to thermal annealing EM Pavelescu, A Gheorghiu, M Dumitrescu, A Tukiainen, T Jouhti, ... Applied physics letters 85 (25), 6158-6160, 2004 | 22 | 2004 |
| Optical and electronic properties of GaAs-based structures with columnar quantum dots M Motyka, G Sęk, K Ryczko, J Andrzejewski, J Misiewicz, LH Li, A Fiore, ... Applied physics letters 90 (18), 2007 | 19 | 2007 |
| Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕ InGaAsP quantum well laser structures emitting at 1.55 μm A Podhorodecki, J Andrzejewski, R Kudrawiec, J Misiewicz, J Wojcik, ... Journal of applied physics 100 (1), 2006 | 16 | 2006 |
| Control of Dynamic Properties of InAs/InAlGaAs/InP Hybrid Quantum Well‐Quantum Dot Structures Designed as Active Parts of 1.55 μm Emitting Lasers W Rudno‐Rudziński, M Syperek, A Maryński, J Andrzejewski, J Misiewicz, ... physica status solidi (a) 215 (4), 1700455, 2018 | 15 | 2018 |
| Carrier delocalization in InAs/InGaAlAs/InP quantum-dash-based tunnel injection system for 1.55 µm emission W Rudno-Rudziński, M Syperek, J Andrzejewski, A Maryński, J Misiewicz, ... AIP Advances 7 (1), 2017 | 15 | 2017 |
| Carrier relaxation bottleneck in type-II InAs/InGaAlAs/InP (001) coupled quantum dots-quantum well structure emitting at 1.55 μm M Syperek, J Andrzejewski, E Rogowicz, J Misiewicz, S Bauer, ... Applied Physics Letters 112 (22), 2018 | 14 | 2018 |
| On optimizing Jacobi–Davidson method for calculating eigenvalues in low dimensional structures using eight band k· p model J Andrzejewski Journal of Computational Physics 249, 22-35, 2013 | 13 | 2013 |
| Electronic structure and optical properties of 1.55 µm emitting InAs/InGaAsP quantum dash tunnel injection structures W Rudno-Rudziński, G Sęk, J Andrzejewski, J Misiewicz, F Lelarge, ... Semiconductor Science and Technology 27 (10), 105015, 2012 | 13 | 2012 |
