| The evolution of non-invasive blood glucose monitoring system for personal application NAB Abd Salam, WH bin Mohd Saad, ZB Manap, F Salehuddin Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 8 …, 2016 | 69 | 2016 |
| Homes appliances controlled using speech recognition in wireless network environment MKN Shahida, B Mardiana, H Hazura, S Fauziyah, M Zahariah, AR Hanim 2009 International Conference on Computer Technology and Development 2, 285-288, 2009 | 31 | 2009 |
| Signature verification system using support vector machine S Fauziyah, O Azlina, B Mardiana, AM Zahariah, H Haroon 2009 6th International Symposium on Mechatronics and its Applications, 1-4, 2009 | 27 | 2009 |
| Development of LPG leakage detector system using arduino with Internet of Things (IoT) MA Hannan, ASM Zain, F Salehuddin, H Hazura, SK Idris, AR Hanim, ... Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 10 …, 2018 | 23 | 2018 |
| Design and optimization of 22 nm gate length high-k/metal gate NMOS transistor I Ahmad, S Shaari, HA Elgomati, F Salehuddin Journal of Physics: Conference Series 431 (1), 012026, 2013 | 23 | 2013 |
| Application of Taguchi Method in Optimization of Gate Oxide and Silicide Thickness for 45nm NMOS Device IA Fauziyah Salehuddin, FA Hamid, A Zaharim International Journal of Engineering & Technology (IJET) 9 (10), 94-98, 2009 | 22 | 2009 |
| Comprehensive identification of sensitive and stable ISFET sensing layer high-k gate based on ISFET/electrolyte models AM Dinar, ASM Zain, F Salehuddin Int. J. Electr. Comput. Eng 9 (2), 926-933, 2019 | 20 | 2019 |
| Design and optimization approaches in double gate device architecture KE Kaharudin, AH Hamidon, F Salehuddin International Journal of Engineering and Technology (IJET) 6 (5), 2070-2079, 2014 | 19 | 2014 |
| Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device F Salehuddin, I Ahmad, FA Hamid, A Zaharim, U Hashim, PR Apte International Journal of the Physical Sciences 6 (30), 7026-7034, 2011 | 18 | 2011 |
| Modeling and simulation of electrolyte pH change in conventional ISFET using commercial Silvaco TCAD AM Dinar, ASM Zain, F Salehuddin, ML Attiah, MK Abdulhameed IOP Conference series: materials science and engineering 518 (4), 042020, 2019 | 17 | 2019 |
| TAGUCHI MODELING WITH THE INTERACTION TEST FOR HIGHER DRIVE CURRENT IN WSI^ sub X^/TIO^ sub 2^ CHANNEL VERTICAL DOUBLE GATE NMOS DEVICE KE Kaharudin, F Salehuddin, ASM Zain, M Aziz Journal of Theoretical and Applied Information Technology 90 (1), 185, 2016 | 15 | 2016 |
| Optimization of process parameter variations on leakage current in in silicon-oninsulator vertical double gate mosfet device KE Kaharudin, F Salehuddin, ASM Zain, MNI Abd Aziz Journal of Mechanical Engineering and Sciences 9, 1614-1627, 2015 | 15* | 2015 |
| Comparison of electrical characteristics between Bulk MOSFET and Silicon-on-insulator (SOI) MOSFET MNIA Aziz, F Salehuddin, ASM Zain, KE Kaharudin, SA Radzi Journal of Telecommunication, Electronic and Computer Engineering (JTEC) 6 …, 2014 | 15 | 2014 |
| Online signature verification system A Julita, S Fauziyah, O Azlina, B Mardiana, H Hazura, AM Zahariah 2009 5th International Colloquium on Signal Processing & Its Applications, 8-12, 2009 | 15 | 2009 |
| Effect of channel length variation on analog and RF performance of junctionless double gate vertical MOSFET KE Kaharudin, F Salehuddin, ASM Zain, AF Roslan J. Eng. Sci. Technol 14 (4), 2410-2430, 2019 | 14 | 2019 |
| Utilizing of CMOS ISFET sensors in DNA applications detection: A systematic review AM Dinar, ASM Zain, F Salehuddin Jour Adv Res. Dyn. Control Syst 10 (04), 569-583, 2018 | 14 | 2018 |
| Scaling down of the 32 nm to 22 nm gate length NMOS transistor AHA Maheran, PS Menon, I Ahmad, HA Elgomati, BY Majlis, ... 2012 10th IEEE International Conference on Semiconductor Electronics (ICSE …, 2012 | 14 | 2012 |
| Design and optimization of 22nm NMOS transistor AHA Maheran, PS Menon, I Ahmad, S Shaari, HA Elgomati, BY Majlis, ... Australian Journal of Basic and Applied Sciences 6 (7), 1-8, 2012 | 14 | 2012 |
| Analysis of process parameter effect on DIBL in n-channel MOSFET device using L27 orthogonal array F Salehuddin, KE Kaharudin, ASM Zain, AKM Yamin, I Ahmad AIP Conference Proceedings 1621 (1), 322-328, 2014 | 13 | 2014 |
| Impact of Height of Silicon Pillar on Vertical DG-MOSFET Device KE Kaharudin, AH Hamidon, F Salehuddin International Journal of Computer, Electrical, Automation, Control and …, 2014 | 13 | 2014 |
Ibrahim ahmadUniversiti Tenaga nasional, universiti kebangsaan MalaysiaEmail verificata su uniten.edu.my