Transition-metal-substituted indium thiospinels as novel intermediate-band materials: prediction and understanding of their electronic properties P Palacios, I Aguilera, K Sánchez, JC Conesa, P Wahnón
Physical Review Letters 101 (4), 046403, 2008
170 2008 Evidence for a direct band gap in the topological insulator Bi IA Nechaev, RC Hatch, M Bianchi, D Guan, C Friedrich, I Aguilera, JL Mi, ...
Physical Review B—Condensed Matter and Materials Physics 87 (12), 121111, 2013
153 2013 Synthesis and Spectral Properties of Nanocrystalline V-Substituted In2 S3 , a Novel Material for More Efficient Use of Solar Radiation R Lucena, I Aguilera, P Palacios, P Wahnón, JC Conesa
Chemistry of Materials 20 (16), 5125-5127, 2008
135 2008 Assessment through first-principles calculations of an intermediate-band photovoltaic material based on Ti-implanted silicon: Interstitial versus substitutional origin K Sánchez, I Aguilera, P Palacios, P Wahnón
Physical Review B—Condensed Matter and Materials Physics 79 (16), 165203, 2009
129 2009 Electronic phase transitions of bismuth under strain from relativistic self-consistent I Aguilera, C Friedrich, S Blügel
Physical Review B 91 (12), 125129, 2015
128 2015 Formation of a reliable intermediate band in Si heavily coimplanted with chalcogens (S, Se, Te) and group III elements (B, Al) K Sánchez, I Aguilera, P Palacios, P Wahnón
Physical Review B—Condensed Matter and Materials Physics 82 (16), 165201, 2010
125 2010 I Aguilera, C Friedrich, G Bihlmayer, S Blügel
Physical Review B—Condensed Matter and Materials Physics 88 (4), 045206, 2013
115 2013 First-principles study of the band structure and optical absorption of CuGaS I Aguilera, J Vidal, P Wahnon, L Reining, S Botti
Physical Review B—Condensed Matter and Materials Physics 84 (8), 085145, 2011
97 2011 V-doped SnS2: a new intermediate band material for a better use of the solar spectrum P Wahnon, JC Conesa, P Palacios, R Lucena, I Aguilera, Y Seminovski, ...
Physical Chemistry Chemical Physics 13 (45), 20401-20407, 2011
95 2011 Direct Observation of the Band Gap Transition in Atomically Thin ReS2 M Gehlmann, I Aguilera, G Bihlmayer, S Nemšák, P Nagler, ...
Nano letters 17 (9), 5187-5192, 2017
83 2017 Bulk band structure of M Michiardi, I Aguilera, M Bianchi, VE de Carvalho, LO Ladeira, ...
Physical Review B 90 (7), 075105, 2014
80 2014 Quasiparticle spectrum and plasmonic excitations in the topological insulator IA Nechaev, I Aguilera, V De Renzi, A Di Bona, A Lodi Rizzini, AM Mio, ...
Physical Review B 91 (24), 245123, 2015
70 2015 Spin-orbit coupling in quasiparticle studies of topological insulators I Aguilera, C Friedrich, S Blügel
Physical Review B—Condensed Matter and Materials Physics 88 (16), 165136, 2013
64 2013 Theoretical optoelectronic analysis of I Aguilera, P Palacios, K Sánchez, P Wahnón
Physical Review B—Condensed Matter and Materials Physics 81 (7), 075206, 2010
64 2010 Thermodynamics of the Formation of Ti- and Cr-doped CuGaS2 Intermediate-band Photovoltaic Materials P Palacios, I Aguilera, P Wahnón, JC Conesa
The Journal of Physical Chemistry C 112 (25), 9525-9529, 2008
60 2008 Enhancement of optical absorption in Ga-chalcopyrite-based intermediate-band materials for high efficiency solar cells I Aguilera, P Palacios, P Wahnón
Solar Energy Materials and Solar Cells 94 (11), 1903-1906, 2010
58 2010 Optical properties of chalcopyrite-type intermediate transition metal band materials from first principles I Aguilera, P Palacios, P Wahnón
Thin Solid Films 516 (20), 7055-7059, 2008
56 2008 Surface Fermi arc connectivity in the type-II Weyl semimetal candidate J Sánchez-Barriga, MG Vergniory, D Evtushinsky, I Aguilera, ...
Physical Review B 94 (16), 161401, 2016
54 2016 Quasi 2D electronic states with high spin-polarization in centrosymmetric MoS2 bulk crystals M Gehlmann, I Aguilera, G Bihlmayer, E Młyńczak, M Eschbach, S Döring, ...
Scientific reports 6 (1), 26197, 2016
53 2016 What is a deep defect? Combining Shockley-Read-Hall statistics with multiphonon recombination theory B Das, I Aguilera, U Rau, T Kirchartz
Physical Review Materials 4 (2), 024602, 2020
49 2020 
Perla WahnonUniversidad Politecnica de MadridEmail verificata su upm.es
