Impact of Plasma Pretreatment and Pore Size on the Sealing of Ultra-Low-k Dielectrics by Self-Assembled Monolayers Y Sun, M Krishtab, H Struyf, P Verdonck, S De Feyter, MR Baklanov, ... Langmuir 30 (13), 3832-3844, 2014 | 33 | 2014 |
Improved plasma resistance for porous low-k dielectrics by pore stuffing approach L Zhang, JF de Marneffe, MH Heyne, S Naumov, Y Sun, A Zotovich, ... ECS Journal of Solid State Science and Technology 4 (1), N3098-N3107, 2015 | 32 | 2015 |
Pore sealing of porous ultralow-k dielectrics by self-assembled monolayers combined with atomic layer deposition S Armini, JL Prado, J Swerts, Y Sun, M Krishtab, J Meersschaut, M Blauw, ... ECS Solid State Letters 1 (2), P42-P44, 2012 | 26 | 2012 |
Electrical properties of amino SAM layers studied with conductive AFM R Chintala, P Eyben, S Armini, AM Caro, J Loyo, Y Sun, W Vandervorst European Polymer Journal 49 (8), 1952-1956, 2013 | 13 | 2013 |
Surface-confined activation of ultra low-k dielectrics in CO2 plasma Y Sun, M Krishtab, Y Mankelevich, L Zhang, S De Feyter, M Baklanov, ... Applied Physics Letters 108 (26), 262902, 2016 | 11 | 2016 |
Stuffing-enabled surface confinement of silanes used as sealing agents on CF 4 plasma-exposed 2.0 p-OSG films Y Sun, E Levrau, L Zhang, J Geypen, J Meersschaut, A Franquet, QT Le, ... Microelectronic Engineering 137, 70-74, 2015 | 10 | 2015 |
Optimization and upscaling of spin coating with organosilane monolayers for low-k pore sealing Y Sun, AR Negreira, J Meersschaut, I Hoflijk, I Vaesen, T Conard, H Struyf, ... Microelectronic Engineering 167, 32-36, 2017 | 9 | 2017 |
Method for activating a porous layer surface QT Le, M Baklanov, Y Sun, S Armini US Patent 9,117,666, 2015 | 4 | 2015 |
The effect of Ar/H2 plasma pretreatments on porous k= 2.0 dielectrics for pore sealing by self-assembled monolayers deposition Y Sun, J Swerts, P Verdonck, A Maheshwari, JL Prado, S De Feyter, ... Solid State Phenomena 195, 146-149, 2013 | 2 | 2013 |
Sealing of low-k dielectric (k= 2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN Y Sun, E Levrau, M Blauw, J Meersschaut, P Verdonck, H Struyf, ... MRS Proceedings 1559, mrss13-1559-aa05-22, 2013 | 2 | 2013 |
Stuffing-enabled confinement of self-assembled monolayer used as sealing agent on plasma-exposed 2.0 p-OSG films Y Sun, E Levrau, L Zhang, J Geypen, A Franquet, QT Le, JF de Marneffe, ... | | 2014 |
Self-organized organic/inorganic films functional to next generation metallization schemes S Armini, G Carnevali, Y Sun, L Zhang, JF de Marneffe, Y Zhang, ... | | 2014 |
Effect of 147nm photons on porous Organo-Silicon Glass materials and damage improvement by optimized Cu/low-k integration approaches L Zhang, JF de Marneffe, M Lukaszewicz, S Barry-Porter, F Vajda, Y Sun, ... AVS, 2014 | | 2014 |
Investigation of sealing efficiency of self-assembled monolayers deposited on porous k= 2.0 dielectrics as a function of dielectric surface preparation by plasma Y Sun, S Armini, M Baklanov, S De Feyter | | 2013 |
Self-assembled monolayers assisted pore sealing of k 2.0 dielectrics S Armini, Y Sun, J Loyo Prado, K Baumans, J De Cooman, M Redzheb, ... | | 2013 |