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Yiting Sun
Yiting Sun
Email verificata su imec.be
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Impact of Plasma Pretreatment and Pore Size on the Sealing of Ultra-Low-k Dielectrics by Self-Assembled Monolayers
Y Sun, M Krishtab, H Struyf, P Verdonck, S De Feyter, MR Baklanov, ...
Langmuir 30 (13), 3832-3844, 2014
332014
Improved plasma resistance for porous low-k dielectrics by pore stuffing approach
L Zhang, JF de Marneffe, MH Heyne, S Naumov, Y Sun, A Zotovich, ...
ECS Journal of Solid State Science and Technology 4 (1), N3098-N3107, 2015
322015
Pore sealing of porous ultralow-k dielectrics by self-assembled monolayers combined with atomic layer deposition
S Armini, JL Prado, J Swerts, Y Sun, M Krishtab, J Meersschaut, M Blauw, ...
ECS Solid State Letters 1 (2), P42-P44, 2012
262012
Electrical properties of amino SAM layers studied with conductive AFM
R Chintala, P Eyben, S Armini, AM Caro, J Loyo, Y Sun, W Vandervorst
European Polymer Journal 49 (8), 1952-1956, 2013
132013
Surface-confined activation of ultra low-k dielectrics in CO2 plasma
Y Sun, M Krishtab, Y Mankelevich, L Zhang, S De Feyter, M Baklanov, ...
Applied Physics Letters 108 (26), 262902, 2016
112016
Stuffing-enabled surface confinement of silanes used as sealing agents on CF 4 plasma-exposed 2.0 p-OSG films
Y Sun, E Levrau, L Zhang, J Geypen, J Meersschaut, A Franquet, QT Le, ...
Microelectronic Engineering 137, 70-74, 2015
102015
Optimization and upscaling of spin coating with organosilane monolayers for low-k pore sealing
Y Sun, AR Negreira, J Meersschaut, I Hoflijk, I Vaesen, T Conard, H Struyf, ...
Microelectronic Engineering 167, 32-36, 2017
92017
Method for activating a porous layer surface
QT Le, M Baklanov, Y Sun, S Armini
US Patent 9,117,666, 2015
42015
The effect of Ar/H2 plasma pretreatments on porous k= 2.0 dielectrics for pore sealing by self-assembled monolayers deposition
Y Sun, J Swerts, P Verdonck, A Maheshwari, JL Prado, S De Feyter, ...
Solid State Phenomena 195, 146-149, 2013
22013
Sealing of low-k dielectric (k= 2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN
Y Sun, E Levrau, M Blauw, J Meersschaut, P Verdonck, H Struyf, ...
MRS Proceedings 1559, mrss13-1559-aa05-22, 2013
22013
Stuffing-enabled confinement of self-assembled monolayer used as sealing agent on plasma-exposed 2.0 p-OSG films
Y Sun, E Levrau, L Zhang, J Geypen, A Franquet, QT Le, JF de Marneffe, ...
2014
Self-organized organic/inorganic films functional to next generation metallization schemes
S Armini, G Carnevali, Y Sun, L Zhang, JF de Marneffe, Y Zhang, ...
2014
Effect of 147nm photons on porous Organo-Silicon Glass materials and damage improvement by optimized Cu/low-k integration approaches
L Zhang, JF de Marneffe, M Lukaszewicz, S Barry-Porter, F Vajda, Y Sun, ...
AVS, 2014
2014
Investigation of sealing efficiency of self-assembled monolayers deposited on porous k= 2.0 dielectrics as a function of dielectric surface preparation by plasma
Y Sun, S Armini, M Baklanov, S De Feyter
2013
Self-assembled monolayers assisted pore sealing of k 2.0 dielectrics
S Armini, Y Sun, J Loyo Prado, K Baumans, J De Cooman, M Redzheb, ...
2013
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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