| Direct observation of porous SiC formed by anodization in HF JS Shor, I Grimberg, BZ Weiss, AD Kurtz Applied physics letters 62 (22), 2836-2838, 1993 | 233 | 1993 |
| Characterization of n-type beta-SiC as a piezoresistor JS Shor, D Goldstein, AD Kurtz IEEE transactions on electron devices 40 (6), 1093-1099, 1993 | 196 | 1993 |
| A fully integrated multi-CPU, GPU and memory controller 32nm processor M Yuffe, E Knoll, M Mehalel, J Shor, T Kurts 2011 IEEE International Solid-State Circuits Conference, 264-266, 2011 | 163 | 2011 |
| A 512 Mb NROM flash data storage memory with 8 MB/s data rate E Maayan, R Dvir, J Shor, Y Polansky, Y Sofer, I Bloom, D Avni, B Eitan, ... 2002 IEEE International Solid-State Circuits Conference. Digest of Technical …, 2002 | 138 | 2002 |
| Photoelectrochemical etching of 6 H‐SiC JS Shor, AD Kurtz Journal of the Electrochemical Society 141 (3), 778, 1994 | 137 | 1994 |
| Characterization of nanocrystallites in porous p‐type 6H‐SiC JS Shor, L Bemis, AD Kurtz, I Grimberg, BZ Weiss, MF MacMillian, ... Journal of Applied Physics 76 (7), 4045-4049, 1994 | 106 | 1994 |
| Characterization of monolithic n-type 6H-SiC piezoresistive sensing elements JS Shor, L Bemis, AD Kurtz IEEE Transactions on Electron Devices 41 (5), 661-665, 1994 | 100 | 1994 |
| Compact BJT-based thermal sensor for processor applications in a 14 nm tri-gate CMOS process T Oshita, J Shor, DE Duarte, A Kornfeld, D Zilberman IEEE Journal of Solid-State Circuits 50 (3), 799-807, 2015 | 93 | 2015 |
| Laser‐assisted photoelectrochemical etching of n‐type beta‐SiC JS Shor, XG Zhang, RM Osgood Journal of The Electrochemical Society 139 (4), 1213, 1992 | 87 | 1992 |
| Porous silicon carbide (SIC) semiconductor device JS Shor, AD Kurtz US Patent 5,569,932, 1996 | 79 | 1996 |
| Miniaturized BJT-based thermal sensor for microprocessors in 32-and 22-nm technologies JS Shor, K Luria IEEE journal of solid-state circuits 48 (11), 2860-2867, 2013 | 78 | 2013 |
| Charge pump stage with body effect minimization JS Shor, E Maayan, Y Polansky US Patent 6,677,805, 2004 | 71 | 2004 |
| Photoelectrochemical conductivity selective etch stops for SiC JS Shor, RM Osgood, AD Kurtz Applied physics letters 60 (8), 1001-1003, 1992 | 70 | 1992 |
| Charge pump with constant boosted output voltage J Shor, Y Sofer, E Maayan US Patent 6,577,514, 2003 | 68 | 2003 |
| Ratiometric BJT-based thermal sensor in 32nm and 22nm technologies J Shor, K Luria, D Zilberman 2012 IEEE International Solid-State Circuits Conference, 210-212, 2012 | 67 | 2012 |
| A method to improve reliability in a 65-nm SRAM PUF array Y Shifman, A Miller, O Keren, Y Weizmann, J Shor IEEE Solid-State Circuits Letters 1 (6), 138-141, 2018 | 53 | 2018 |
| Stack element circuit JS Shor, E Maayan US Patent 6,791,396, 2004 | 52 | 2004 |
| Dopant-selective etch stops in 6H and 3C SiC JS Shor, AD Kurtz, I Grimberg, BZ Weiss, RM Osgood Journal of applied physics 81 (3), 1546-1551, 1997 | 50 | 1997 |
| High temperature transducers and methods of fabricating the same employing silicon carbide AD Kurtz, D Goldstein, JS Shor US Patent 5,165,283, 1992 | 50 | 1992 |
| Broad‐Area Photoelectrochemical Etching of n‐Type Beta‐SiC JS Shor, RM Osgood Journal of the Electrochemical Society 140 (8), L123, 1993 | 47 | 1993 |