Articoli con mandati relativi all'accesso pubblico - Tibor GrasserUlteriori informazioni
Non disponibili pubblicamente: 22
Advanced modeling of oxide defects
W Goes, F Schanovsky, T Grasser
Bias temperature instability for devices and circuits, 409-446, 2014
Mandati: Austrian Science Fund
Voltage-dependent activation energy maps for analytic lifetime modeling of NBTI without time extrapolation
K Puschkarsky, H Reisinger, C Schluender, W Gustin, T Grasser
IEEE Transactions on Electron Devices 65 (11), 4764-4771, 2018
Mandati: Federal Ministry of Education and Research, Germany
Efficient modeling of charge trapping at cryogenic temperatures—Part I: Theory
J Michl, A Grill, D Waldhoer, W Goes, B Kaczer, D Linten, B Parvais, ...
IEEE Transactions on Electron Devices 68 (12), 6365-6371, 2021
Mandati: European Commission
Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric
SE Tyaginov, YY Illarionov, MI Vexler, M Bina, J Cervenka, J Franco, ...
Journal of Computational Electronics 13, 733-738, 2014
Mandati: Austrian Science Fund
Hot-carrier degradation modeling of decananometer nMOSFETs using the drift-diffusion approach
P Sharma, S Tyaginov, SE Rauch, J Franco, A Makarov, MI Vexler, ...
IEEE Electron Device Letters 38 (2), 160-163, 2016
Mandati: Austrian Science Fund
Finding suitable gate insulators for reliable 2D FETs
T Knobloch, YY Illarionov, T Grasser
2022 IEEE International Reliability Physics Symposium (IRPS), 1-10, 2022
Mandati: Austrian Science Fund
Efficient modeling of charge trapping at cryogenic temperatures—part II: Experimental
J Michl, A Grill, D Waldhoer, W Goes, B Kaczer, D Linten, B Parvais, ...
IEEE Transactions on Electron Devices 68 (12), 6372-6378, 2021
Mandati: European Commission
Impact of gate dielectrics on the threshold voltage in MoS2 transistors
T Knobloch, G Rzepa, YY Illarionov, M Waltl, D Polyushkin, A Pospischil, ...
ECS Transactions 80 (1), 203, 2017
Mandati: Austrian Science Fund
Machine learning prediction of defect structures in amorphous silicon dioxide
D Milardovich, M Jech, D Waldhoer, AMB El-Sayed, T Grasser
ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021
Mandati: European Commission
Machine Learning Prediction of Defect Formation Energies in a-SiO2
D Milardovich, M Jech, D Waldhoer, M Waltl, T Grasser
2020 International Conference on Simulation of Semiconductor Processes and …, 2020
Mandati: European Commission
Silicon-impurity defects in calcium fluoride: A first principles study
D Waldhoer, B Manna, AMB El-Sayed, T Knobloch, Y Illarionov, T Grasser
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
Mandati: European Commission
Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H)
C Wilhelmer, D Waldhoer, D Milardovich, L Cvitkovich, M Waltl, T Grasser
2023 International Conference on Simulation of Semiconductor Processes and …, 2023
Mandati: European Commission
On the limits of applicability of drift-diffusion based hot carrier degradation modeling
M Jech, P Sharma, S Tyaginov, F Rudolf, T Grasser
Japanese Journal of Applied Physics 55 (4S), 04ED14, 2016
Mandati: Austrian Science Fund
Reliability Assessment of Double-Gated Wafer-Scale MoS2 Field Effect Transistors through Hysteresis and Bias Temperature Instability Analyses
A Provias, T Knobloch, A Kitamura, KP O’Brien, CJ Dorow, D Waldhoer, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
Mandati: European Commission
Modeling 2D Material-Based Nanoelectronic Devices in the Presence of Defects
T Knobloch, D Waldhoer, T Grasser
IEEE Nanotechnology Magazine, 2023
Mandati: European Commission
System matrix compression for spherical harmonics expansions of the Boltzmann transport equation
K Rupp, T Grasser, A Jüngel
2010 International Conference on Simulation of Semiconductor Processes and …, 2010
Mandati: Austrian Science Fund
Polaron formation in the hydrogenated amorphous silicon nitride
C Wilhelmer, D Waldhör, L Cvitkovich, D Milardovich, M Waltl, T Grasser
Physical Review B 110 (4), 045201, 2024
Mandati: European Commission
Variability in Si/SiGe and Si/SiO2 Spin Qubits due to Interfacial Disorder
L Cvitkovich, B Sklénard, D Waldhör, J Li, C Wilhelmer, G Veste, ...
2023 International Conference on Simulation of Semiconductor Processes and …, 2023
Mandati: European Commission
(Invited) Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials
T Knobloch, T Grasser
Electrochemical Society Meeting Abstracts 243, 1319-1319, 2023
Mandati: European Commission
Metastability of Negatively Charged Hydroxyl-E’Centers and their Potential Role in Positive Bias Temperature Instabilities
C Wilhelmer, D Waldhoer, M Jech, AMB El-Sayed, L Cvitkovich, M Waltl, ...
ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022
Mandati: European Commission
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