| Method of repairing a low dielectric constant material layer TC Chang, PT Liu, YS Mor US Patent 6,521,547, 2003 | 478 | 2003 |
| Electrical and photosensitive characteristics of a-IGZO TFTs related to oxygen vacancy J Yao, N Xu, S Deng, J Chen, J She, HPD Shieh, PT Liu, YP Huang IEEE transactions on electron devices 58 (4), 1121-1126, 2011 | 279 | 2011 |
| Environment-dependent metastability of passivation-free indium zinc oxide thin film transistor after gate bias stress PT Liu, YT Chou, LF Teng Applied Physics Letters 95 (23), 2009 | 261 | 2009 |
| Image reconstruction of a perfectly conducting cylinder by the genetic algorithm CC Chiu, PT Liu IEE Proceedings-Microwaves, Antennas and Propagation 143 (3), 249-253, 1996 | 155 | 1996 |
| The effects of plasma treatment for low dielectric constant hydrogen silsesquioxane (HSQ) PT Liu, TC Chang, SM Sze, FM Pan, YJ Mei, WF Wu, MS Tsai, BT Dai, ... Thin Solid Films 332 (1-2), 345-350, 1998 | 126 | 1998 |
| Effective repair to ultra-low-k dielectric material (k∼2.0) by hexamethyldisilazane treatment YS Mor, TC Chang, PT Liu, TM Tsai, CW Chen, ST Yan, CJ Chu, WF Wu, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2002 | 119 | 2002 |
| Nitrogenated amorphous InGaZnO thin film transistor PT Liu, YT Chou, LF Teng, FH Li, HP Shieh Applied Physics Letters 98 (5), 2011 | 105 | 2011 |
| Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor LF Teng, PT Liu, YJ Lo, YJ Lee Applied Physics Letters 101 (13), 2012 | 102 | 2012 |
| Role of environmental and annealing conditions on the passivation-free in-Ga–Zn–O TFT CS Fuh, SM Sze, PT Liu, LF Teng, YT Chou Thin solid films 520 (5), 1489-1494, 2011 | 101 | 2011 |
| Effects of NH/sub 3/-plasma nitridation on the electrical characterizations of low-k hydrogen silsesquioxane with copper interconnects PT Liu, TC Chan, YL Yang, YF Cheng, SM Sze IEEE Transactions on Electron Devices 47 (9), 1733-1739, 2000 | 97 | 2000 |
| Enhancing the oxygen plasma resistance of low-k methylsilsesquioxane by H2 plasma treatment PT Liu, TC Chang, YS Mor, SM Sze Japanese journal of applied physics 38 (6R), 3482, 1999 | 90 | 1999 |
| Effect of annealing on defect elimination for high mobility amorphous indium-zinc-tin-oxide thin-film transistor CS Fuh, PT Liu, WH Huang, SM Sze IEEE Electron Device Letters 35 (11), 1103-1105, 2014 | 87 | 2014 |
| Innovative voltage driving pixel circuit using organic thin-film transistor for AMOLEDs PT Liu, LW Chu Journal of Display Technology 5 (6), 224-228, 2009 | 83 | 2009 |
| The Novel Improvement of Low Dielectric Constant Methylsilsesquioxane by N 2 O Plasma Treatment TC Chang, PT Liu, YS Mor, SM Sze, YL Yang, MS Feng, FM Pan, BT Dai, ... Journal of The Electrochemical Society 146 (10), 3802, 1999 | 79 | 1999 |
| Multilevel resistive switching memory with amorphous InGaZnO-based thin film CH Hsu, YS Fan, PT Liu Applied Physics Letters 102 (6), 2013 | 78 | 2013 |
| Formation of stacked Ni silicide nanocrystals for nonvolatile memory application WR Chen, TC Chang, PT Liu, PS Lin, CH Tu, CY Chang Applied Physics Letters 90 (11), 2007 | 76 | 2007 |
| A novel nanowire channel poly-Si TFT functioning as transistor and nonvolatile SONOS memory SC Chen, TC Chang, PT Liu, YC Wu, PS Lin, BH Tseng, JH Shy, SM Sze, ... IEEE Electron Device Letters 28 (9), 809-811, 2007 | 75 | 2007 |
| Effect of oxygen plasma on the surface states of ZnO films used to produce thin-film transistors on soft plastic sheets JS Meena, MC Chu, YC Chang, HC You, R Singh, PT Liu, HPD Shieh, ... Journal of Materials Chemistry C 1 (40), 6613-6622, 2013 | 74 | 2013 |
| High-performance hydrogenated amorphous-Si TFT for AMLCD and AMOLED applications CW Chen, TC Chang, PT Liu, HY Lu, KC Wang, CS Huang, CC Ling, ... IEEE electron device letters 26 (10), 731-733, 2005 | 74 | 2005 |
| Recovering dielectric loss of low dielectric constant organic siloxane during the photoresist removal process TC Chang, YS Mor, PT Liu, TM Tsai, CW Chen, YJ Mei, SM Sze Journal of the Electrochemical Society 149 (8), F81, 2002 | 72 | 2002 |
