| 45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell CJ Lin, SH Kang, YJ Wang, K Lee, X Zhu, WC Chen, X Li, WN Hsu, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 423 | 2009 |
| Development of Embedded STT-MRAM for Mobile System-on-Chips K Lee, SH Kang IEEE Transactions on Magnetics 47, 2011 | 155 | 2011 |
| MTJ structure and integration scheme X Li, SH Kang, MM Nowak US Patent 8,866,242, 2014 | 141 | 2014 |
| Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (MTJ) C Park, K Lee, SH Kang US Patent 9,379,314, 2016 | 129 | 2016 |
| A Novel Sensing Circuit for Deep Submicron Spin Transfer Torque MRAM (STT-MRAM) J Kim, K Ryu, SH Kang, SO Jung IEEE Transactions on VLSI Systems 20 (1), 2012 | 120 | 2012 |
| Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices K Lee, J Kan, X Zhu, MG Gottwald, C Park, SH Kang US Patent 9,634,237, 2017 | 107 | 2017 |
| Fabricating a magnetic tunnel junction storage element WC Chen, SH Kang US Patent 8,981,502, 2015 | 106 | 2015 |
| A 45nm 1 Mb Embedded STT-MRAM with Design Techniques to Minimize Read-Disturbance JP Kim, T Kim, W Hao, HM Rao, K Lee, X Zhu, W Hsu, SH Kang, M Nowak, ... VLSI Symposia, 2011 | 105 | 2011 |
| Spin-Transfer Switching Magnetic Element Utilizing a Composite Free Layer Comprising a Superparamagnetic Layer WC Chen, SH Kang US Patent 8,362,580, 2013 | 104 | 2013 |
| A study on practically unlimited endurance of STT-MRAM JJ Kan, C Park, C Ching, J Ahn, Y Xie, M Pakala, SH Kang IEEE Transactions on Electron Devices 64 (9), 3639-3646, 2017 | 96 | 2017 |
| Invalid Write Prevention for STT-MRAM Array K Ryu, J Kim, SO Jung, SH Kang US Patent 8,432,727, 2013 | 92 | 2013 |
| Strain induced reduction of switching current in spin-transfer torque switching devices X Zhu, X Li, WC Chen, SH Kang US Patent 8,704,320, 2014 | 88 | 2014 |
| Thermally tolerant perpendicular magnetic anisotropy coupled elements for spin-transfer torque switching device WC Chen, K Lee, X Zhu, SH Kang US Patent 9,935,258, 2018 | 83 | 2018 |
| Memory Cell and Method of Forming a Magnetic Tunnel junction (MTJ) of a Memory Cell S Gu, SH Kang, M Nowak US Patent 7,919,794, 2011 | 83 | 2011 |
| Design Consideration of Magnetic Tunnel Junctions for Reliable High-Temperature Operation of STT-MRAM K Lee, SH Kang IEEE Transactions on Magnetics 46, 2010 | 83 | 2010 |
| Amorphous alloy space for perpendicular MTJs K Lee, WC Chen, S Kang US Patent 9,548,445, 2017 | 82 | 2017 |
| STT-MRAM sensing: a review T Na, SH Kang, SO Jung IEEE Transactions on Circuits and Systems II: Express Briefs 68 (1), 12-18, 2020 | 81 | 2020 |
| Physically unclonable function based on resistivity of magnetoresistive random-access memory magnetic tunnel junctions X Zhu, SM Millendorf, X Guo, DM Jacobson, K Lee, SH Kang, MM Nowak US Patent App. 14/077,093, 2015 | 81 | 2015 |
| Multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuits for performing matrix computations with multi-bit input vectors X Li, SH Kang, WC Chen US Patent 10,460,817, 2019 | 80 | 2019 |
| Emerging Materials and Devices in Spintronic Integrated Circuits for Energy-Smart Mobile Computing and Connectivity SH Kang, K Lee Acta Materialia 61, 2013 | 77 | 2013 |
Seong-Ook JungProfessor of Electrical and Electronic Engineering, Yonsei UniversityEmail verificata su yonsei.ac.kr
