Mike Krames

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Jonathan J. Wierer, Jr.North Carolina State University, Department of Electrical and Computer EngineeringEmail verificata su ncsu.edu
Troy TrottierUniversity of Florida, Motorola, Hewlett-Packard, Lumileds, Phillips, Soraa, SLDEmail verificata su kyocera-sldlaser.com
Aurelien DavidGoogleEmail verificata su polytechnique.org
Arto NurmikkoProfessor of Engineering and Physics, Brown UniversityEmail verificata su brown.edu
Christopher KocotDirector, Finisar CorporationEmail verificata su finisar.com
Yoon-Kyu SongSeoul National UniversityEmail verificata su snu.ac.kr
Mihail SigalasProfessor, Department of Materials Science, University of PatrasEmail verificata su upatras.gr
Andrew Y. KimLumiledsEmail verificata su alum.mit.edu
Michael CichRaxiumEmail verificata su raxium.com
Marie Anne Van De HaarSeaborough Research B.V.Email verificata su seaborough.com
Eleni MakaronaInstitute of Nanoscience and NanotechnologyEmail verificata su inn.demokritos.gr
Jung HanWilliam Norton Professor of Electrical Engineering, Yale UniversityEmail verificata su yale.edu
Kevin HouserOregon State UniversityEmail verificata su oregonstate.edu
Jörg MeyerProfessor, Hochschule Hamm-LippstadtEmail verificata su hshl.de
Christophe HurniFacebookEmail verificata su engr.ucsb.edu
Thomas M KatonaCalifornia Polytechnic State UniversityEmail verificata su calpoly.edu
Minchen WeiThe Hong Kong Polytechnic UniversityEmail verificata su polyu.edu.hk
Anne BerendsSeaborough ResearchEmail verificata su sunled.health
Jerry SimmonsSandia National LaboratoriesEmail verificata su sandia.gov
Rajat SharmaStudent, Technical University of MunichEmail verificata su tum.de

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Mike Krames

Arkesso, LLC; ORCID 0000-0001-8545-851X

Email verificata su arkesso.com - Home page

semiconductors light emitting diodes lasers lighting displays


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Status and future of high-power light-emitting diodes for solid-state lighting MR Krames, OB Shchekin, R Mueller-Mach, GO Mueller, L Zhou, ... Journal of display technology 3 (2), 160-175, 2007	2475	2007
Auger recombination in InGaN measured by photoluminescence YC Shen, GO Mueller, S Watanabe, NF Gardner, A Munkholm, ... Applied Physics Letters 91 (14), 2007	1429	2007
High-power AlGaInN flip-chip light-emitting diodes JJ Wierer, DA Steigerwald, MR Krames, JJ O’shea, MJ Ludowise, ... Applied Physics Letters 78 (22), 3379-3381, 2001	871	2001
Highly efficient all‐nitride phosphor‐converted white light emitting diode R Mueller‐Mach, G Mueller, MR Krames, HA Höppe, F Stadler, W Schnick, ... physica status solidi (a) 202 (9), 1727-1732, 2005	683	2005
High-power phosphor-converted light-emitting diodes based on III-nitrides R Mueller-Mach, GO Mueller, MR Krames, T Trottier IEEE Journal of Selected Topics in Quantum Electronics 8 (2), 339-345, 2002	668	2002
High-power truncated-inverted-pyramid light-emitting diodes exhibiting % external quantum efficiency MR Krames, M Ochiai-Holcomb, GE Höfler, C Carter-Coman, EI Chen, ... Applied physics letters 75 (16), 2365-2367, 1999	660	1999
Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕ cm2 NF Gardner, GO Müller, YC Shen, G Chen, S Watanabe, W Götz, ... Applied Physics Letters 91 (24), 2007	556	2007
InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures JJ Wierer, MR Krames, JE Epler, NF Gardner, MG Craford, JR Wendt, ... Applied Physics Letters 84 (19), 3885-3887, 2004	503	2004
History of gallium–nitride-based light-emitting diodes for illumination S Nakamura, MR Krames Proceedings of the IEEE 101 (10), 2211-2220, 2013	502	2013
Ordered interface texturing for a light emitting device MR Krames, FA Kish Jr US Patent 5,779,924, 1998	478	1998
Research challenges to ultra‐efficient inorganic solid‐state lighting JM Phillips, ME Coltrin, MH Crawford, AJ Fischer, MR Krames, ... Laser & Photonics Reviews 1 (4), 307-333, 2007	474	2007
Luminescent ceramic for a light emitting device GO Mueller, RB Mueller-Mach, MR Krames, PJ Schmidt, HH Bechtel, ... US Patent 7,361,938, 2008	454*	2008
Phosphor-converted light emitting device WD Collins III, MR Krames, GJ Verhoeckx, NJM Van Leth US Patent 6,642,652, 2003	429	2003
High performance thin-film flip-chip InGaN–GaN light-emitting diodes OB Shchekin, JE Epler, TA Trottier, T Margalith, DA Steigerwald, ... Applied Physics Letters 89 (7), 2006	428	2006
Carrier distribution in (0001) InGaN∕ GaN multiple quantum well light-emitting diodes A David, MJ Grundmann, JF Kaeding, NF Gardner, TG Mihopoulos, ... Applied Physics Letters 92 (5), 2008	417	2008
III-Phospide and III-Arsenide flip chip light-emitting devices MD Camras, DA Steigerwald, FM Steranka, MJ Ludowise, PS Martin, ... US Patent 6,784,463, 2004	399	2004
History, development, and applications of high-brightness visible light-emitting diodes RD Dupuis, MR Krames Journal of lightwave technology 26 (9), 1154-1171, 2008	378	2008
Using electrophoresis to produce a conformally coated phosphor-converted light emitting semiconductor WD Collins III, MR Krames, GJ Verhoeckx, NJM van Leth US Patent 6,576,488, 2003	357	2003
High power LEDs–Technology status and market applications FM Steranka, J Bhat, D Collins, L Cook, MG Craford, R Fletcher, ... physica status solidi (a) 194 (2), 380-388, 2002	326	2002
Polarized semiconductor light emitting device MH Keuper, MR Krames, GO Mueller US Patent 7,408,201, 2008	318	2008

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