Brian R. Bennett

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Ben V ShanabrookNaval Research LabEmail verificata su mailaps.org
Lloyd J. WhitmanNational Institute of Standards and TechnologyEmail verificata su nist.gov
Doewon ParkNaval Research LaboratoryEmail verificata su nrl.navy.mil
Jesus A. del AlamoMITEmail verificata su mit.edu
Richard A. SorefResearch Professor of Engineering, The University of Massachusetts at BostonEmail verificata su rcn.com
B.T. JonkerNaval Research LaboratoryEmail verificata su nrl.navy.mil
M. TwiggNaval Research LaboratoryEmail verificata su estd.nrl.navy.mil
Paul M. ThibadoProfessor, Physics, University of ArkansasEmail verificata su uark.edu
Krishna SaraswatProfessor of Electrical Engineering, Stanford UniversityEmail verificata su stanford.edu
Evan GlaserNaval Research LaboratoryEmail verificata su nrl.navy.mil
Allan S. BrackerResearch Chemist, Naval Research LaboratoryEmail verificata su nrl.navy.mil
Aneesh NainaniStanford Univeristy, Applied MaterialsEmail verificata su stanford.edu
Mark JohnsonNaval Research LaboratoryEmail verificata su nrl.navy.mil
Yun Daniel ParkProfessor of Physics & Astronomy, Seoul National UniversityEmail verificata su snu.ac.kr
George KioseoglouUniversity of Crete and FORTH/IESLEmail verificata su materials.uoc.gr
Meyer jrNaval Research LabEmail verificata su nrl.navy.mil
M.M. MillerNaval Research LaboratoryEmail verificata su nrl.navy.mil
Igor VurgaftmanNaval Research LaboratoryEmail verificata su nrl.navy.mil
Ashkar AliIntel CorporationEmail verificata su psu.edu
William Bernard CarterDirector, Sensors and Materials Laboratory, HRL Laboratories, LLCEmail verificata su hrl.com

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Brian R. Bennett

Washington-Liberty High School; formerly Naval Research Laboratory (NRL), ONR, and MIT

Email verificata su navy.mil - Home page

semiconductors mbe epitaxy electronic materials materials physics


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Electrooptical effects in silicon R Soref, B Bennett IEEE journal of quantum electronics 23 (1), 123-129, 1987	3422	1987
Carrier-induced change in refractive index of InP, GaAs and InGaAsP BR Bennett, RA Soref, JA Del Alamo IEEE Journal of Quantum Electronics 26 (1), 113-122, 1990	1324	1990
Observation of spin injection at a ferromagnet-semiconductor interface PR Hammar, BR Bennett, MJ Yang, M Johnson Physical Review Letters 83 (1), 203, 1999	669	1999
Robust electrical spin injection into a semiconductor heterostructure BT Jonker, YD Park, BR Bennett, HD Cheong, G Kioseoglou, A Petrou Physical Review B 62 (12), 8180, 2000	658	2000
Antimonide-based compound semiconductors for electronic devices: A review BR Bennett, R Magno, JB Boos, W Kruppa, MG Ancona Solid-State Electronics 49 (12), 1875-1895, 2005	431	2005
Kramers-Kronig analysis of electro-optical switching in silicon RA Soref, BR Bennett Integrated Optical Circuit Engineering IV 704, 32-37, 1987	288	1987
Hybrid Hall effect device M Johnson, BR Bennett, MJ Yang, MM Miller, BV Shanabrook Applied Physics Letters 71 (7), 974-976, 1997	245	1997
Evidence of a Hybridization Gap in``Semimetallic''InAs/GaSb Systems MJ Yang, CH Yang, BR Bennett, BV Shanabrook Physical review letters 78 (24), 4613, 1997	208	1997
Auger coefficients in type-II quantum wells JR Meyer, CL Felix, WW Bewley, I Vurgaftman, EH Aifer, LJ Olafsen, ... Applied physics letters 73 (20), 2857-2859, 1998	205	1998
Surface reconstruction phase diagrams for InAs, AlSb, and GaSb AS Bracker, MJ Yang, BR Bennett, JC Culbertson, WJ Moore Journal of crystal growth 220 (4), 384-392, 2000	197	2000
Photoluminescence studies of self‐assembled InSb, GaSb, and AlSb quantum dot heterostructures ER Glaser, BR Bennett, BV Shanabrook, R Magno Applied physics letters 68 (25), 3614-3616, 1996	191	1996
Molecular beam epitaxial growth of InSb, GaSb, and AlSb nanometer‐scale dots on GaAs BR Bennett, R Magno, BV Shanabrook Applied physics letters 68 (4), 505-507, 1996	185	1996
AlSb/InAs HEMT's for low-voltage, high-speed applications JB Boos, W Kruppa, BR Bennett, D Park, SW Kirchoefer, R Bass, ... IEEE Transactions on electron devices 45 (9), 1869-1875, 1998	171	1998
Nanostructure patterns written in III–V semiconductors by an atomic force microscope R Magno, BR Bennett Applied Physics Letters 70 (14), 1855-1857, 1997	150	1997
Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 A Ali, HS Madan, AP Kirk, DA Zhao, DA Mourey, MK Hudait, RM Wallace, ... Applied Physics Letters 97 (14), 2010	142	2010
Mobility enhancement in strained p-InGaSb quantum wells BR Bennett, MG Ancona, JB Boos, BV Shanabrook Applied Physics Letters 91 (4), 2007	126	2007
Optimization of the Interface and a High-Mobility GaSb pMOSFET A Nainani, T Irisawa, Z Yuan, BR Bennett, JB Boos, Y Nishi, KC Saraswat IEEE Transactions on Electron Devices 58 (10), 3407-3415, 2011	123	2011
Electrorefraction and electroabsorption in inp, gaas, gasb, inas, and insb B Bennett, R Soref IEEE journal of quantum electronics 23 (12), 2159-2166, 1987	112	1987
Metallic III-V (001) surfaces: Violations of the electron counting model LJ Whitman, PM Thibado, SC Erwin, BR Bennett, BV Shanabrook Physical review letters 79 (4), 693, 1997	108	1997
Long‐Period Magnetotelluric Measurements Near the Central California Coast: A Land‐Locked View of the Conductivity Structure Under the Pacific Ocean RL Mackie, BR Bennett, TR Madden Geophysical Journal 95 (1), 181-194, 1988	98	1988

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