Vincenzo Fiorentini

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Alessio FilippettiCNR-IOM and University of CagliariEmail verificata su dsf.unica.it
Pietro DelugasSISSAEmail verificata su sissa.it
David VanderbiltProfessor of Physics and Astronomy, Rutgers UniversityEmail verificata su physics.rutgers.edu
Matthias SchefflerDirector of NOMAD Laboratory at FHI of Max-Planck-GesellschaftEmail verificata su fhi-berlin.mpg.de
Maria Barbara MaccioniDepartment of Physics, University of PaviaEmail verificata su unipv.it
Andrea BosinPhysics Department, Universita' di Cagliari, ItalyEmail verificata su dsf.unica.it
Paolo RuggeroneFull Professor of Applied Physics, University of CagliariEmail verificata su dsf.unica.it
Paolo LugliFree University of Bozen-BolzanoEmail verificata su unibz.it
Fabio Della SalaCNR-IMM and IITEmail verificata su le.imm.cnr.it
Oliver AmbacherGips-Schüle-Professur für Leistungselektronik, Universität FreiburgEmail verificata su inatech.uni-freiburg.de
Aldo Di CarloProf. of Opto&Nano-electronics, University of Rome Tor Vergata. Consiglio Nazionale delle RicercheEmail verificata su uniroma2.it
Giancarlo CappelliniDipartimento di Fisica, Università di CagliariEmail verificata su dsf.unica.it
Paola AlippiCNREmail verificata su cnr.it
Danilo PuggioniNorthwestern UniversityEmail verificata su northwestern.edu
Martin StutzmannProfessor (retired) of Experimental Physics, Walter Schottky Institut, TU MünchenEmail verificata su tum.de
geoffrey pourtoisimecEmail verificata su imec.be
Carlo Maria CarbonaroProfessore Associato di Fisica, Dipartimento di Fisica, Università di CagliariEmail verificata su dsf.unica.it

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Vincenzo Fiorentini

Associate professor, condensed matter physics, University of Cagliari, Italy

Email verificata su dsf.unica.it - Home page

Physics Condensed matter theory magnetism nanoelectronics


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Spontaneous polarization and piezoelectric constants of III-V nitrides F Bernardini, V Fiorentini, D Vanderbilt Physical Review B 56 (16), R10024, 1997	3965	1997
Pyroelectric properties of Al (In) GaN/GaN hetero-and quantum well structures O Ambacher, J Majewski, C Miskys, A Link, M Hermann, M Eickhoff, ... Journal of physics: condensed matter 14 (13), 3399, 2002	1415	2002
Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures V Fiorentini, F Bernardini, O Ambacher Applied physics letters 80 (7), 1204-1206, 2002	1048	2002
Effects of macroscopic polarization in III-V nitride multiple quantum wells V Fiorentini, F Bernardini, F Della Sala, A Di Carlo, P Lugli Physical Review B 60 (12), 8849, 1999	696	1999
First-principles prediction of structure, energetics, formation enthalpy, elastic constants, polarization, and piezoelectric constants of AlN, GaN, and InN: Comparison of local … A Zoroddu, F Bernardini, P Ruggerone, V Fiorentini Physical Review B 64 (4), 045208, 2001	617	2001
Macroscopic polarization and band offsets at nitride heterojunctions F Bernardini, V Fiorentini Physical Review B 57 (16), R9427, 1998	544	1998
Extracting convergent surface energies from slab calculations V Fiorentini, M Methfessel Journal of Physics: Condensed Matter 8 (36), 6525, 1996	509	1996
Nonlinear macroscopic polarization in III-V nitride alloys F Bernardini, V Fiorentini Physical Review B 64 (8), 085207, 2001	437	2001
Spontaneous versus piezoelectric polarization in III–V nitrides: conceptual aspects and practical consequences F Bernardini, V Fiorentini physica status solidi (b) 216 (1), 391-398, 1999	421	1999
Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures F Della Sala, A Di Carlo, P Lugli, F Bernardini, V Fiorentini, R Scholz, ... Applied physics letters 74 (14), 2002-2004, 1999	389	1999
Reconstruction mechanism of fcc transition metal (001) surfaces V Fiorentini, M Methfessel, M Scheffler Physical review letters 71 (7), 1051, 1993	318	1993
Polarization-based calculation of the dielectric tensor of polar crystals F Bernardini, V Fiorentini, D Vanderbilt Physical review letters 79 (20), 3958, 1997	297	1997
Accurate calculation of polarization-related quantities in semiconductors F Bernardini, V Fiorentini, D Vanderbilt Physical Review B 63 (19), 193201, 2001	294	2001
Electronic and structural properties of GaN by the full-potential linear muffin-tin orbitals method: The role of the d electrons V Fiorentini, M Methfessel, M Scheffler Physical Review B 47 (20), 13353, 1993	260	1993
Spontaneous 2-Dimensional Carrier Confinement at the -Type Interface P Delugas, A Filippetti, V Fiorentini, DI Bilc, D Fontaine, P Ghosez Physical review letters 106 (16), 166807, 2011	250	2011
Theoretical evaluation of zirconia and hafnia as gate oxides for Si microelectronics V Fiorentini, G Gulleri Physical review letters 89 (26), 266101, 2002	205	2002
Dielectric scaling of the self-energy scissor operator in semiconductors and insulators V Fiorentini, A Baldereschi Physical Review B 51 (23), 17196, 1995	191	1995
Phase diagram and polarization of stable phases of (Ga1− xInx) 2O3 MB Maccioni, V Fiorentini Applied physics express 9 (4), 041102, 2016	169	2016
Theory of adsorption and surfactant effect of Sb on Ag (111) S Oppo, V Fiorentini, M Scheffler Physical review letters 71 (15), 2437, 1993	167	1993
First-principles calculation of the piezoelectric tensor of III–V nitrides F Bernardini, V Fiorentini Applied physics letters 80 (22), 4145-4147, 2002	162	2002

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