| Intrinsic and extrinsic performance limits of graphene devices on SiO2 JH Chen, C Jang, S Xiao, M Ishigami, MS Fuhrer Nature nanotechnology 3 (4), 206-209, 2008 | 4179 | 2008 |
| Extraordinary mobility in semiconducting carbon nanotubes T Dürkop, SA Getty, E Cobas, MS Fuhrer Nano letters 4 (1), 35-39, 2004 | 2051 | 2004 |
| Atomic Structure of Graphene on SiO2 M Ishigami, JH Chen, WG Cullen, MS Fuhrer, ED Williams Nano letters 7 (6), 1643-1648, 2007 | 2034 | 2007 |
| Charged-impurity scattering in graphene JH Chen, C Jang, S Adam, MS Fuhrer, ED Williams, M Ishigami Nature physics 4 (5), 377-381, 2008 | 1862 | 2008 |
| Single-walled carbon nanotube electronics PL McEuen, MS Fuhrer, H Park IEEE transactions on nanotechnology 1 (1), 78-85, 2002 | 1693 | 2002 |
| Crossed nanotube junctions MS Fuhrer, J Nygård, L Shih, M Forero, YG Yoon, MSC Mazzoni, HJ Choi, ... science 288 (5465), 494-497, 2000 | 1601 | 2000 |
| Rotational actuators based on carbon nanotubes AM Fennimore, TD Yuzvinsky, WQ Han, MS Fuhrer, J Cumings, A Zettl nature 424 (6947), 408-410, 2003 | 1455 | 2003 |
| High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects W Bao, X Cai, D Kim, K Sridhara, MS Fuhrer Applied Physics Letters 102 (4), 2013 | 952 | 2013 |
| Scanned probe microscopy of electronic transport in carbon nanotubes A Bachtold, MS Fuhrer, S Plyasunov, M Forero, EH Anderson, A Zettl, ... Physical review letters 84 (26), 6082, 2000 | 905 | 2000 |
| High-mobility nanotube transistor memory MS Fuhrer, BM Kim, T Dürkop, T Brintlinger Nano letters 2 (7), 755-759, 2002 | 778 | 2002 |
| Defect scattering in graphene JH Chen, WG Cullen, C Jang, MS Fuhrer, ED Williams Physical review letters 102 (23), 236805, 2009 | 764 | 2009 |
| Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides A Ayari, E Cobas, O Ogundadegbe, MS Fuhrer Journal of applied physics 101 (1), 2007 | 744 | 2007 |
| Sensitive room-temperature terahertz detection via the photothermoelectric effect in graphene X Cai, AB Sushkov, RJ Suess, MM Jadidi, GS Jenkins, LO Nyakiti, ... Nature nanotechnology 9 (10), 814-819, 2014 | 657 | 2014 |
| Measurement of mobility in dual-gated MoS2 transistors MS Fuhrer, J Hone Nature nanotechnology 8 (3), 146-147, 2013 | 597 | 2013 |
| Dual-gated bilayer graphene hot-electron bolometer J Yan, MH Kim, JA Elle, AB Sushkov, GS Jenkins, HM Milchberg, ... Nature nanotechnology 7 (7), 472-478, 2012 | 564 | 2012 |
| Two dimensional and layered transition metal oxides K Kalantar-Zadeh, JZ Ou, T Daeneke, A Mitchell, T Sasaki, MS Fuhrer Applied Materials Today 5, 73-89, 2016 | 522 | 2016 |
| Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3 D Kim, S Cho, NP Butch, P Syers, K Kirshenbaum, S Adam, J Paglione, ... Nature Physics 8 (6), 459-463, 2012 | 466 | 2012 |
| Tunable Kondo effect in graphene with defects JH Chen, L Li, WG Cullen, ED Williams, MS Fuhrer Nature Physics 7 (7), 535-538, 2011 | 452 | 2011 |
| Tuning two-dimensional nanomaterials by intercalation: materials, properties and applications J Wan, SD Lacey, J Dai, W Bao, MS Fuhrer, L Hu Chemical Society Reviews 45 (24), 6742-6765, 2016 | 448 | 2016 |
| Tuning the effective fine structure constant in graphene: Opposing effects of dielectric screening on short-and long-range potential scattering C Jang, S Adam, JH Chen, ED Williams, S Das Sarma, MS Fuhrer Physical review letters 101 (14), 146805, 2008 | 442 | 2008 |
