10×10nm2 Hf/HfOx crossbar resistive RAM with excellent performance, reliability and low-energy operation B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
914 2011 Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
626 2019 Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices U Celano, L Goux, A Belmonte, K Opsomer, A Franquet, A Schulze, ...
Nano letters 14 (5), 2401-2406, 2014
373 2014 Endurance/Retention Trade-off on YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
292 2013 Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ...
Applied Physics Letters 97 (24), 2010
278 2010 Intrinsic switching variability in HfO2 RRAM A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
262 2013 Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers L Goux, JG Lisoni, M Jurczak, DJ Wouters, L Courtade, C Muller
Journal of Applied Physics 107 (2), 2010
234 2010 Balancing SET/RESET Pulse for YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
221 2012 Imaging the three-dimensional conductive channel in filamentary-based oxide resistive switching memory U Celano, L Goux, R Degraeve, A Fantini, O Richard, H Bender, ...
Nano letters 15 (12), 7970-7975, 2015
201 2015 Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
177 2021 Vertical phase change memory cell and methods for manufacturing thereof LRA Goux, DJCCM Wouters, JGL Reyes, T Gille
US Patent 7,728,319, 2010
156 2010 On the gradual unipolar and bipolar resistive switching of TiN\HfO2\Pt memory systems L Goux, YY Chen, L Pantisano, XP Wang, G Groeseneken, M Jurczak, ...
Electrochemical and Solid-State Letters 13 (6), G54, 2010
150 2010 Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories F Nardi, D Ielmini, C Cagli, S Spiga, M Fanciulli, L Goux, DJ Wouters
Solid-State Electronics 58 (1), 42-47, 2011
143 2011 Improvement of data retention in HfO2 /Hf 1T1R RRAM cell under low operating current YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
137 2013 Causes and consequences of the stochastic aspect of filamentary RRAM R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
133 2015 Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
119 2012 International Electron Devices Meeting YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
IEEE, Washington, DC, 402, 2011
118 2011 Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells L Goux, K Opsomer, R Degraeve, R Müller, C Detavernier, DJ Wouters, ...
Applied Physics Letters 99 (5), 2011
118 2011 Capacitor-less, long-retention (> 400s) DRAM cell paving the way towards low-power and high-density monolithic 3D DRAM A Belmonte, H Oh, N Rassoul, GL Donadio, J Mitard, H Dekkers, ...
2020 IEEE International Electron Devices Meeting (IEDM), 28.2. 1-28.2. 4, 2020
114 2020 Understanding of the endurance failure in scaled HfO2 -based 1T1R RRAM through vacancy mobility degradation YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012
110 2012 