Hybrid vehicle with integral generator for auxiliary loads AJ Buglione, TS Moore, G Cilibraise, KS Lee, RG Reed Jr, DC Schroeder, ...
US Patent 7,231,994, 2007
108 2007 InN: A material with photovoltaic promise and challenges E Trybus, G Namkoong, W Henderson, S Burnham, WA Doolittle, ...
Journal of Crystal Growth 288 (2), 218-224, 2006
108 2006 Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics G Namkoong, WA Doolittle, AS Brown, M Losurdo, P Capezzuto, G Bruno
Journal of applied physics 91 (4), 2499-2507, 2002
106 2002 Metal modulation epitaxy growth for extremely high hole concentrations above 1019cm− 3 in GaN G Namkoong, E Trybus, KK Lee, M Moseley, WA Doolittle, DC Look
Applied Physics Letters 93 (17), 2008
97 2008 GaN betavoltaic energy converters C Honsberg, WA Doolittle, M Allen, C Wang
Conference Record of the Thirty-first IEEE Photovoltaic Specialists …, 2005
83 2005 Reproducible increased Mg incorporation and large hole concentration in GaN using metal modulated epitaxy SD Burnham, G Namkoong, DC Look, B Clafin, WA Doolittle
Journal of Applied Physics 104 (2), 2008
75 2008 Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers M Losurdo, P Capezzuto, G Bruno, G Namkoong, WA Doolittle, AS Brown
Journal of applied physics 91 (4), 2508-2518, 2002
72 2002 Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN BP Gunning, CAM Fabien, JJ Merola, EA Clinton, WA Doolittle, S Wang, ...
Journal of Applied Physics 117 (4), 2015
70 2015 Thermal conductance across harmonic-matched epitaxial Al-sapphire heterointerfaces Z Cheng, YR Koh, H Ahmad, R Hu, J Shi, ME Liao, Y Wang, T Bai, R Li, ...
Communications Physics 3 (1), 115, 2020
69 2020 Control of surface adatom kinetics for the growth of high-indium content InGaN throughout the miscibility gap M Moseley, J Lowder, D Billingsley, WA Doolittle
Applied Physics Letters 97 (19), 2010
68 2010 Guidelines and limitations for the design of high-efficiency InGaN single-junction solar cells CAM Fabien, WA Doolittle
Solar Energy Materials and Solar Cells 130, 354-363, 2014
63 2014 Energetics of Mg incorporation at GaN(0001) and Q Sun, A Selloni, TH Myers, WA Doolittle
Physical Review B—Condensed Matter and Materials Physics 73 (15), 155337, 2006
62 2006 Oxygen adsorption and incorporation at irradiated Q Sun, A Selloni, TH Myers, WA Doolittle
Physical Review B—Condensed Matter and Materials Physics 74 (19), 195317, 2006
59 2006 Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation AM Fischer, YO Wei, FA Ponce, M Moseley, B Gunning, WA Doolittle
Applied Physics Letters 103 (13), 2013
57 2013 Transient atomic behavior and surface kinetics of GaN M Moseley, D Billingsley, W Henderson, E Trybus, WA Doolittle
Journal of Applied Physics 106 (1), 2009
56 2009 Substantial P‐Type Conductivity of AlN Achieved via Beryllium Doping H Ahmad, J Lindemuth, Z Engel, CM Matthews, TM McCrone, ...
Advanced Materials 33 (42), 2104497, 2021
55 2021 Reproducible reflection high energy electron diffraction signatures for improvement of AlN using in situ growth regime characterization SD Burnham, G Namkoong, KK Lee, WA Doolittle
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
54 2007 Molecular beam epitaxy of complex metal-oxides: Where have we come, where are we going, and how are we going to get there? WA Doolittle, AG Carver, W Henderson
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2005
53 2005 Low-temperature growth of InGaN films over the entire composition range by MBE CAM Fabien, BP Gunning, WA Doolittle, AM Fischer, YO Wei, H Xie, ...
Journal of Crystal Growth 425, 115-118, 2015
51 2015 III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy G Namkoong, KK Lee, SM Madison, W Henderson, SE Ralph, ...
Applied Physics Letters 87 (17), 2005
51 2005 
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