| Spin-transfer torque MRAM (STT-MRAM): Challenges and prospects Y Huai AAPPS bulletin 18 (6), 33-40, 2008 | 776 | 2008 |
| Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions Y Huai, F Albert, P Nguyen, M Pakala, T Valet Applied Physics Letters 84 (16), 3118-3120, 2004 | 759 | 2004 |
| Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory Z Diao, Z Li, S Wang, Y Ding, A Panchula, E Chen, LC Wang, Y Huai Journal of Physics: Condensed Matter 19 (16), 165209, 2007 | 562 | 2007 |
| Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization PP Nguyen, Y Huai US Patent 6,992,359, 2006 | 352 | 2006 |
| Magnetic element utilizing spin transfer and an MRAM device using the magnetic element Y Huai, PP Nguyen US Patent 6,714,444, 2004 | 345 | 2004 |
| Magnetic tunnel junction having diffusion stop layer Y Huai US Patent 7,576,956, 2009 | 314 | 2009 |
| Perpendicular magnetization magnetic element utilizing spin transfer Y Huai US Patent 6,967,863, 2005 | 312 | 2005 |
| Spin transfer switching and spin polarization in magnetic tunnel junctions with MgO and AlOx barriers Z Diao, D Apalkov, M Pakala, Y Ding, A Panchula, Y Huai Applied Physics Letters 87 (23), 2005 | 297 | 2005 |
| Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element F Albert, Y Huai, PP Nguyen US Patent 6,847,547, 2005 | 288 | 2005 |
| Method and system for reducing assymetry in a spin valve having a synthetic pinned layer J Zhang, N Zhu, Y Huai, AS Rana, W Chen US Patent 6,447,935, 2002 | 283 | 2002 |
| Three-terminal magnetostatically coupled spin transfer-based MRAM cell Y Huai, PP Nguyen, F Albert US Patent 7,009,877, 2006 | 282 | 2006 |
| Spin transfer magnetic element having low saturation magnetization free layers PP Nguyen, Y Huai, Z Diao, F Albert US Patent 7,242,045, 2007 | 280 | 2007 |
| Spin-transfer multilayer stack containing magnetic layers with resettable magnetization PP Nguyen, Y Huai US Patent 7,190,611, 2007 | 277 | 2007 |
| Magnetic memory element utilizing spin transfer switching and storing multiple bits PP Nguyen, Y Huai US Patent 6,985,385, 2006 | 277 | 2006 |
| Magnetostatically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element Y Huai, F Albert, PP Nguyen US Patent 6,829,161, 2004 | 275 | 2004 |
| Ultralow-current-density and bias-field-free spin-transfer nano-oscillator Z Zeng, G Finocchio, B Zhang, PK Amiri, JA Katine, IN Krivorotov, Y Huai, ... Scientific reports 3 (1), 1426, 2013 | 263 | 2013 |
| MTJ MRAM with stud patterning DH Jung, K Satoh, J Zhang, Y Zhou, Y Huai US Patent 8,772,888, 2014 | 251 | 2014 |
| Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element Y Huai, PP Nguyen US Patent 6,838,740, 2005 | 244 | 2005 |
| Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements Y Huai, PP Nguyen, F Albert US Patent 7,161,829, 2007 | 239 | 2007 |
| Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements Z Diao, Y Huai, T Valet, PP Nguyen, M Pakala US Patent 7,369,427, 2008 | 238 | 2008 |
