Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application YC Yang, F Pan, Q Liu, M Liu, F Zeng
Nano letters 9 (4), 1636-1643, 2009
998 2009 Tumor immune microenvironment characterization in clear cell renal cell carcinoma identifies prognostic and immunotherapeutically relevant messenger RNA signatures Y Şenbabaoğlu, RS Gejman, AG Winer, M Liu, EM Van Allen, ...
Genome biology 17, 1-25, 2016
831 2016 Two-dimensional materials for next-generation computing technologies C Liu, H Chen, S Wang, Q Liu, YG Jiang, DW Zhang, M Liu, P Zhou
Nature Nanotechnology 15 (7), 545-557, 2020
765 2020 Real‐time observation on dynamic growth/dissolution of conductive filaments in oxide‐electrolyte‐based ReRAM Q Liu, J Sun, H Lv, S Long, K Yin, N Wan, Y Li, L Sun, M Liu
Advanced Materials 24 (14), 1844, 2012
726 2012 Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
626 2019 Blue luminescent centers and microstructural evaluation by XPS and Raman in ZnO thin films annealed in vacuum, N2 and O2 XQ Wei, BY Man, M Liu, CS Xue, HZ Zhuang, C Yang
Physica B: Condensed Matter 388 (1-2), 145-152, 2007
515 2007 Controllable growth of nanoscale conductive filaments in solid-electrolyte-based ReRAM by using a metal nanocrystal covered bottom electrode Q Liu, S Long, H Lv, W Wang, J Niu, Z Huo, J Chen, M Liu
ACS nano 4 (10), 6162-6168, 2010
486 2010 Nucleation-controlled growth of superior lead-free perovskite Cs3 Bi2 I9 single-crystals for high-performance X-ray detection Y Zhang, Y Liu, Z Xu, H Ye, Z Yang, J You, M Liu, Y He, MG Kanatzidis, ...
Nature communications 11 (1), 2304, 2020
401 2020 Memristive technologies for data storage, computation, encryption, and radio-frequency communication M Lanza, A Sebastian, WD Lu, M Le Gallo, MF Chang, D Akinwande, ...
Science 376 (6597), eabj9979, 2022
396 2022 Investigation of resistive switching in Cu-doped HfO2 thin film for multilevel non-volatile memory applications Y Wang, Q Liu, S Long, W Wang, Q Wang, M Zhang, S Zhang, Y Li, Q Zuo, ...
Nanotechnology 21 (4), 045202, 2009
381 2009 Aluminum‐doped cesium lead bromide perovskite nanocrystals with stable blue photoluminescence used for display backlight M Liu, G Zhong, Y Yin, J Miao, K Li, C Wang, X Xu, C Shen, H Meng
Advanced Science 4 (11), 1700335, 2017
380 2017 Recent advances in synthesis and surface modification of lanthanide-doped upconversion nanoparticles for biomedical applications M Lin, Y Zhao, SQ Wang, M Liu, ZF Duan, YM Chen, F Li, F Xu, TJ Lu
Biotechnology advances 30 (6), 1551-1561, 2012
364 2012 Resistive switching memory effect of ZrO2 films with Zr+ implanted Q Liu, W Guan, S Long, R Jia, M Liu, J Chen
Applied physics letters 92 (1), 2008
350 2008 Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology H Sun, Q Liu, C Li, S Long, H Lv, C Bi, Z Huo, L Li, M Liu
Advanced Functional Materials 24 (36), 5679-5686, 2014
348 2014 An artificial spiking afferent nerve based on Mott memristors for neurorobotics X Zhang, Y Zhuo, Q Luo, Z Wu, R Midya, Z Wang, W Song, R Wang, ...
Nature communications 11 (1), 51, 2020
346 2020 An artificial neuron based on a threshold switching memristor X Zhang, W Wang, Q Liu, X Zhao, J Wei, R Cao, Z Yao, X Zhu, F Zhang, ...
IEEE Electron Device Letters 39 (2), 308-311, 2017
337 2017 A 1300 mm2 Ultrahigh‐Performance Digital Imaging Assembly using High‐Quality Perovskite Single Crystals Y Liu, Y Zhang, K Zhao, Z Yang, J Feng, X Zhang, K Wang, L Meng, H Ye, ...
Advanced materials 30 (29), 1707314, 2018
323 2018 Nonpolar Nonvolatile Resistive Switching in Cu Doped W Guan, S Long, Q Liu, M Liu, W Wang
IEEE Electron Device Letters 29 (5), 434-437, 2008
322 2008 Inch-size 0D-structured lead-free perovskite single crystals for highly sensitive stable X-ray imaging Y Liu, Z Xu, Z Yang, Y Zhang, J Cui, Y He, H Ye, K Zhao, H Sun, R Lu, ...
Matter 3 (1), 180-196, 2020
270 2020 Improvement of Resistive Switching Properties in ReRAM With Implanted Ti Ions Q Liu, S Long, W Wang, Q Zuo, S Zhang, J Chen, M Liu
IEEE Electron Device Letters 30 (12), 1335-1337, 2009
265 2009 