| Study of random dopant fluctuation effects in germanium-source tunnel FETs N Damrongplasit, C Shin, SH Kim, RA Vega, TJK Liu IEEE transactions on electron devices 58 (10), 3541-3548, 2011 | 175 | 2011 |
| Study of random dopant fluctuation induced variability in the raised-Ge-source TFET N Damrongplasit, SH Kim, TJK Liu IEEE electron device letters 34 (2), 184-186, 2013 | 152 | 2013 |
| Variation study of the planar ground-plane bulk MOSFET, SOI FinFET, and trigate bulk MOSFET designs X Sun, V Moroz, N Damrongplasit, C Shin, TJK Liu IEEE transactions on electron devices 58 (10), 3294-3299, 2011 | 72 | 2011 |
| 4H-SiC N-channel JFET for operation in high-temperature environments WC Lien, N Damrongplasit, JH Paredes, DG Senesky, TJK Liu, AP Pisano IEEE Journal of the Electron Devices Society 2 (6), 164-167, 2014 | 44 | 2014 |
| Performance and yield benefits of quasi-planar bulk CMOS technology for 6-T SRAM at the 22-nm node C Shin, N Damrongplasit, X Sun, Y Tsukamoto, B Nikolic, TJK Liu IEEE transactions on electron devices 58 (7), 1846-1854, 2011 | 29 | 2011 |
| MOSFET performance and scalability enhancement by insertion of oxygen layers N Xu, N Damrongplasit, H Takeuchi, RJ Stephenson, NW Cody, A Yiptong, ... 2012 International Electron Devices Meeting, 6.4. 1-6.4. 4, 2012 | 28 | 2012 |
| Extension of planar bulk n-channel MOSFET scaling with oxygen insertion technology N Xu, H Takeuchi, N Damrongplasit, RJ Stephenson, X Huang, NW Cody, ... IEEE Transactions on Electron Devices 61 (9), 3345-3349, 2014 | 25 | 2014 |
| Impact of gate line-edge roughness (LER) versus random dopant fluctuations (RDF) on germanium-source tunnel FET performance N Damrongplasit, SH Kim, C Shin, TJK Liu IEEE transactions on nanotechnology 12 (6), 1061-1067, 2013 | 23 | 2013 |
| Variation-aware comparative study of 10-nm GAA versus FinFET 6-T SRAM performance and yield P Zheng, YB Liao, N Damrongplasit, MH Chiang, TJK Liu IEEE Transactions on Electron Devices 61 (12), 3949-3954, 2014 | 21 | 2014 |
| Comparative study of uniform versus supersteep retrograde MOSFET channel doping and implications for 6-T SRAM yield N Damrongplasit, N Xu, H Takeuchi, RJ Stephenson, NW Cody, A Yiptong, ... IEEE transactions on electron devices 60 (5), 1790-1793, 2013 | 19 | 2013 |
| Design of gate-all-around silicon MOSFETs for 6-T SRAM area efficiency and yield YB Liao, MH Chiang, N Damrongplasit, WC Hsu, TJK Liu IEEE Transactions on Electron Devices 61 (7), 2371-2377, 2014 | 18 | 2014 |
| Simultaneous carrier transport enhancement and variability reduction in Si MOSFETs by insertion of partial monolayers of oxygen RJ Mears, N Xu, N Damrongplasit, H Takeuchi, RJ Stephenson, NW Cody, ... 2012 IEEE Silicon Nanoelectronics Workshop (SNW), 1-2, 2012 | 15 | 2012 |
| Threshold voltage and DIBL variability modeling based on forward and reverse measurements for SRAM and analog MOSFETs N Damrongplasit, L Zamudio, TJK Liu, S Balasubramanian IEEE Transactions on Electron Devices 62 (4), 1119-1126, 2015 | 14 | 2015 |
| Smart agriculture monitoring and management system using IoT-enabled devices based on LoRaWAN P Supanirattisai, UY Kongpop, A Pimpin, W Srituravanich, ... 2022 37th International Technical Conference on Circuits/Systems, Computers …, 2022 | 10 | 2022 |
| 6-T SRAM cell design with gate-all-around silicon nanowire MOSFETs YB Liao, MH Chiang, N Damrongplasit, TJK Liu, WC Hsu 2013 International Symposium on VLSI Technology, Systems and Application …, 2013 | 9 | 2013 |
| Threshold voltage and DIBL variability modeling for SRAM and analog MOSFETs N Damrongplasit, L Zamudio, S Balasubramanian 2012 Symposium on VLSI Technology (VLSIT), 187-188, 2012 | 7 | 2012 |
| Volumetric measurement of rectangular parcel box using LiDar depth camera for dimensioning and 3D bin packing applications N Ladplee, A Pimpin, W Srituravanich, N Damrongplasit 2022 IEEE International Conference on Consumer Electronics-Asia (ICCE-Asia), 1-4, 2022 | 6 | 2022 |
| Study of variability in advanced transistor technologies N Damrongplasit eScholarship, University of California, 2014 | 6 | 2014 |
| A microfluidic device for capturing malaria-infected red blood cells by magnetophoretic force using an array of V-and W-shaped nickel microstructures P Noosawat, W Srituravanich, N Damrongplasit, Y Suzuki, ... Microfluidics and Nanofluidics 26 (10), 78, 2022 | 3 | 2022 |
| Comparison of 10 nm GAA vs. FinFET 6-T SRAM performance and yield P Zheng, YB Liao, N Damrongplasit, MH Chiang, WC Hsu, TJK Liu 2014 Silicon Nanoelectronics Workshop (SNW), 1-2, 2014 | 2 | 2014 |
Changhwan ShinProfessor at Korea UniversityEmail verificata su korea.ac.kr
