Optical critical points of thin-film VR D’costa, CS Cook, AG Birdwell, CL Littler, M Canonico, S Zollner, ...
Physical Review B—Condensed Matter and Materials Physics 73 (12), 125207, 2006
447 2006 Growth and strain compensation effects in the ternary Si1−x −y Gex y K Eberl, SS Iyer, S Zollner, JC Tsang, FK LeGoues
Applied physics letters 60 (24), 3033-3035, 1992
397 1992 Ge–Sn semiconductors for band-gap and lattice engineering M Bauer, J Taraci, J Tolle, AVG Chizmeshya, S Zollner, DJ Smith, ...
Applied physics letters 81 (16), 2992-2994, 2002
341 2002 Carrier concentration and lattice absorption in bulk and epitaxial silicon carbide determined using infrared ellipsometry TE Tiwald, JA Woollam, S Zollner, J Christiansen, RB Gregory, ...
Physical Review B 60 (16), 11464, 1999
190 1999 Temperature dependence of the dielectric function and the interband critical-point parameters of GaP S Zollner, M Garriga, J Kircher, J Humlíček, M Cardona, G Neuhold
Physical Review B 48 (11), 7915, 1993
186 1993 Microscopic theory of intervalley scattering in GaAs: k dependence of deformation potentials and scattering rates S Zollner, S Gopalan, M Cardona
Journal of applied physics 68 (4), 1682-1693, 1990
162 1990 Optical properties of bulk and thin-film S Zollner, AA Demkov, R Liu, PL Fejes, RB Gregory, P Alluri, JA Curless, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
156 2000 Isotope and temperature shifts of direct and indirect band gaps in diamond-type semiconductors S Zollner, M Cardona, S Gopalan
Physical Review B 45 (7), 3376, 1992
154 1992 Model dielectric functions for native oxides on compound semiconductors S Zollner
Applied physics letters 63 (18), 2523-2524, 1993
148 1993 Visible and ultraviolet Raman scattering studies of M Holtz, WM Duncan, S Zollner, R Liu
Journal of Applied Physics 88 (5), 2523-2528, 2000
133 2000 Optical and structural properties of P Aella, C Cook, J Tolle, S Zollner, AVG Chizmeshya, J Kouvetakis
Applied Physics Letters 84 (6), 888-890, 2004
121 2004 Vibrational properties of AlN grown on (111)-oriented silicon T Prokofyeva, M Seon, J Vanbuskirk, M Holtz, SA Nikishin, NN Faleev, ...
Physical Review B 63 (12), 125313, 2001
118 2001 Dielectric functions of bulk 4H and 6H SiC and spectroscopic ellipsometry studies of thin SiC films on Si S Zollner, JG Chen, E Duda, T Wetteroth, SR Wilson, JN Hilfiker
Journal of applied physics 85 (12), 8353-8361, 1999
117 1999 Anneal of epitaxial layer in a semiconductor device S Zollner, V Dhandapani, PA Grudowski, GS Spencer
US Patent 7,416,605, 2008
111 2008 Intervalley deformation potentials and scattering rates in zinc blende semiconductors S Zollner, S Gopalan, M Cardona
Applied physics letters 54 (7), 614, 1989
106 1989 Optical constants of germanium and thermally grown germanium dioxide from 0.5 to 6.6 eV via a multisample ellipsometry investigation TN Nunley, NS Fernando, N Samarasingha, JM Moya, CM Nelson, ...
Journal of Vacuum Science & Technology B 34 (6), 2016
102 2016 Electronic and optical properties of NbO2 A O'Hara, TN Nunley, AB Posadas, S Zollner, AA Demkov
Journal of Applied Physics 116 (21), 2014
102 2014 Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition DH Triyoso, RI Hegde, S Zollner, ME Ramon, S Kalpat, R Gregory, ...
Journal of applied physics 98 (5), 2005
101 2005 High-quality AlN grown on Si (111) by gas-source molecular-beam epitaxy with ammonia SA Nikishin, VG Antipov, S Francoeur, NN Faleev, GA Seryogin, ...
Applied physics letters 75 (4), 484-486, 1999
91 1999 Versatile buffer layer architectures based on Ge1− xSnx alloys R Roucka, J Tolle, C Cook, AVG Chizmeshya, J Kouvetakis, V D’Costa, ...
Applied Physics Letters 86 (19), 2005
87 2005 
José MenéndezProfessor of Physics, Arizona State UniversityEmail verificata su asu.edu