| Mechanism of surface conduction in the vicinity of Schottky gates on AlGaN∕ GaN heterostructures J Kotani, M Tajima, S Kasai, T Hashizume Applied Physics Letters 91 (9), 2007 | 129 | 2007 |
| Stochastic resonance in Schottky wrap gate-controlled GaAs nanowire field-effect transistors and their networks S Kasai, T Asai Applied Physics Express 1 (8), 083001, 2008 | 94 | 2008 |
| A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon S Kasai, H Hasegawa IEEE Electron Device Letters 23 (8), 446-448, 2002 | 92 | 2002 |
| Fabrication and characterization of GaAs single electron devices having single and multiple dots based on Schottky in-plane-gate and wrap-gate control of two-dimensional … S Kasai, K Jinushi, H Tomozawa, H Hasegawa Japanese journal of applied physics 36 (3S), 1678, 1997 | 84 | 1997 |
| Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires H Hasegawa, S Kasai Physica E: Low-dimensional Systems and Nanostructures 11 (2-3), 149-154, 2001 | 82 | 2001 |
| Silicon nanowire-array-textured solar cells for photovoltaic application C Chen, R Jia, H Yue, H Li, X Liu, D Wu, W Ding, T Ye, S Kasai, J Chu, ... Journal of Applied Physics 108 (9), 2010 | 80 | 2010 |
| Novel hybrid voltage controlled ring oscillators using single electron and MOS transistors W Zhang, NJ Wu, T Hashizume, S Kasai IEEE transactions on nanotechnology 6 (2), 146-157, 2007 | 56 | 2007 |
| Nearly temperature-independent saturation drain current in a multi-mesa-channel AlGaN/GaN high electron mobility transistor T Tamura, J Kotani, S Kasai, T Hashizume Applied physics express 1 (2), 023001, 2008 | 51 | 2008 |
| Method for controlling electrical properties of single-layer graphene nanoribbons via adsorbed planar molecular nanoparticles H Tanaka, R Arima, M Fukumori, D Tanaka, R Negishi, Y Kobayashi, ... Scientific reports 5 (1), 12341, 2015 | 46 | 2015 |
| Unpinning of Fermi level in nanometer-sized Schottky contacts on GaAs and InP H Hasegawa, T Sato, S Kasai Applied surface science 166 (1-4), 92-96, 2000 | 43 | 2000 |
| Amoeba-inspired nanoarchitectonic computing implemented using electrical Brownian ratchets M Aono, S Kasai, SJ Kim, M Wakabayashi, H Miwa, M Naruse Nanotechnology 26 (23), 234001, 2015 | 42 | 2015 |
| Threshold-variation-enhanced adaptability of response in a nanowire field-effect transistor network S Kasai, K Miura, Y Shiratori Applied Physics Letters 96 (19), 2010 | 42 | 2010 |
| Effects of gap states on scanning tunneling spectra observed on (110)-and (001)-oriented clean surfaces and ultrathin Si layer covered surfaces of GaAs prepared by molecular … H Hasegawa, N Negoro, S Kasai, Y Ishikawa, H Fujikuwa Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000 | 39 | 2000 |
| Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping S Fadzli Abd Rahman, S Kasai, A Manaf Hashim Applied physics letters 100 (19), 2012 | 37 | 2012 |
| Current transport and capacitance–voltage characteristics of GaAs and InP nanometer-sized Schottky contacts formed by in situ electrochemical process T Sato, S Kasai, H Hasegawa Applied surface science 175, 181-186, 2001 | 36 | 2001 |
| Room-temperature discrete-charge-fluctuation dynamics of a single molecule adsorbed on a carbon nanotube A Setiadi, H Fujii, S Kasai, K Yamashita, T Ogawa, T Ikuta, Y Kanai, ... Nanoscale 9 (30), 10674-10683, 2017 | 33 | 2017 |
| Enhancement of weak-signal response based on stochastic resonance in carbon nanotube field-effect transistors Y Hakamata, Y Ohno, K Maehashi, S Kasai, K Inoue, K Matsumoto Journal of Applied Physics 108 (10), 2010 | 33 | 2010 |
| Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach S Kasai, M Yumoto, H Hasegawa Solid-State Electronics 47 (2), 199-204, 2003 | 33 | 2003 |
| Control of GaAs Schottky barrier height by ultrathin molecular beam epitaxy Si interface control layer S Kasai, H Hasegawa Japanese journal of applied physics 32 (1S), 502, 1993 | 32 | 1993 |
| A novel InGaAs/InAlAs insulated gate pseudomorphic HEMT with a silicon interface control layer showing high DC-and RF-performance YG Xie, S Kasai, H Takahashi, C Jiang, H Hasegawa IEEE Electron Device Letters 22 (7), 312-314, 2001 | 31 | 2001 |
