Tongtong Zhu

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Rachel OliverProfessor of Materials Science, Cambridge UniversityEmail verificata su cam.ac.uk
Colin HumphreysQueen Mary University of LondonEmail verificata su qmul.ac.uk
Robert TaylorProfessor of Condensed Matter Physics, University of OxfordEmail verificata su physics.ox.ac.uk
Fabrice OehlerCNRS researcher, Centre for Nanosciences and Nanotechnologies, Université Paris-Saclay (France)Email verificata su c2n.upsaclay.fr
John JarmanUniversity of CambridgeEmail verificata su cam.ac.uk
Fengzai TangUniversity of Warwick, UKEmail verificata su warwick.ac.uk
James Thomas GriffithsResearch associate, University of CambridgeEmail verificata su cam.ac.uk
Wai Yuen FuResearch Assistant Professor, Electrical and Electronic Engineering, the University of Hong KongEmail verificata su hku.hk
Philip DawsonUniversity of ManchesterEmail verificata su manchester.ac.uk
Benjamin P.L. ReidPostdoctoral Research Assistant, University of OxfordEmail verificata su physics.ox.ac.uk
F. C-P. MassabuauUniversity of StrathclydeEmail verificata su strath.ac.uk
Evelyn L. HuTarr Coyne Professor of Applied Physics and of Electrical EngineeringEmail verificata su seas.harvard.edu
Stefan SchulzSenior Staff Researcher, Tyndall National InstituteEmail verificata su tyndall.ie
Christopher Xiang RenDemeter LabsEmail verificata su lanl.gov
Igor Aharonovich, FOSA, FSPIE, FRSNUniversity of Technology SydneyEmail verificata su uts.edu.au
Markus PristovsekProf. Nagoya UniversityEmail verificata su imass.nagoya-u.ac.jp
Saroj Kanta PatraR&D Engineer at OSRAMEmail verificata su ams-osram.com
Mark J. HolmesAssociate Professor, The University of TokyoEmail verificata su iis.u-tokyo.ac.jp
Dandan ZhuUniversity of CambridgeEmail verificata su cam.ac.uk
Yasuhiko ArakawaThe University of TokyoEmail verificata su iis.u-tokyo.ac.jp

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Tongtong Zhu

University of Cambridge

Email verificata su cam.ac.uk - Home page

Nitride semiconductors Quantum dots Single Photon Source


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Microstructural origins of localization in InGaN quantum wells RA Oliver, SE Bennett, T Zhu, DJ Beesley, MJ Kappers, DW Saxey, ... Journal of Physics D: Applied Physics 43 (35), 354003, 2010	114	2010
Unintentional doping in GaN T Zhu, RA Oliver Physical Chemistry Chemical Physics 14 (27), 9558-9573, 2012	89	2012
Low threshold, room-temperature microdisk lasers in the blue spectral range I Aharonovich, A Woolf, KJ Russell, T Zhu, N Niu, MJ Kappers, RA Oliver, ... Applied Physics Letters 103 (2), 2013	83	2013
Functional conductive nanomaterials via polymerisation in nano-channels: PEDOT in a MOF T Wang, M Farajollahi, S Henke, T Zhu, SR Bajpe, S Sun, JS Barnard, ... Materials Horizons 4 (1), 64-71, 2017	79	2017
Wafer-scale fabrication of non-polar mesoporous GaN distributed Bragg reflectors via electrochemical porosification T Zhu, Y Liu, T Ding, WY Fu, J Jarman, CX Ren, RV Kumar, RA Oliver Scientific reports 7 (1), 1-8, 2017	73	2017
Indium clustering in a-plane InGaN quantum wells as evidenced by atom probe tomography F Tang, T Zhu, F Oehler, WY Fu, JT Griffiths, FCP Massabuau, ... Applied Physics Letters 106 (7), 2015	62	2015
Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures TJ Badcock, M Ali, T Zhu, M Pristovsek, RA Oliver, AJ Shields Applied Physics Letters 109 (15), 2016	57	2016
Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy T Zhu, F Oehler, BPL Reid, RM Emery, RA Taylor, MJ Kappers, RA Oliver Applied Physics Letters 102 (25), 2013	53	2013
Surface morphology of homoepitaxial c-plane GaN: Hillocks and ridges F Oehler, T Zhu, S Rhode, MJ Kappers, CJ Humphreys, RA Oliver Journal of crystal growth 383, 12-18, 2013	49	2013
Distinctive signature of indium gallium nitride quantum dot lasing in microdisk cavities A Woolf, T Puchtler, I Aharonovich, T Zhu, N Niu, D Wang, R Oliver, EL Hu Proceedings of the National Academy of Sciences 111 (39), 14042-14046, 2014	47	2014
Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires TJ Puchtler, T Wang, CX Ren, F Tang, RA Oliver, RA Taylor, T Zhu arXiv preprint arXiv:1609.07973, 2016	44	2016
Ultra-low-threshold InGaN/GaN quantum dot micro-ring lasers D Wang, T Zhu, RA Oliver, EL Hu Optics letters 43 (4), 799-802, 2018	43	2018
Effect of threading dislocations on the quality factor of InGaN/GaN microdisk cavities TJ Puchtler, A Woolf, T Zhu, D Gachet, EL Hu, RA Oliver ACS photonics 2 (1), 137-143, 2015	41	2015
Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells FCP Massabuau, L Trinh-Xuan, D Lodié, EJ Thrush, D Zhu, F Oehler, ... Journal of Applied Physics 113 (7), 2013	40	2013
The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem CJ Humphreys, JT Griffiths, F Tang, F Oehler, SD Findlay, C Zheng, ... Ultramicroscopy 176, 93-98, 2017	39	2017
Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots T Wang, TJ Puchtler, T Zhu, JC Jarman, LP Nuttall, RA Oliver, RA Taylor Nanoscale 9 (27), 9421-9427, 2017	39	2017
Dislocations as channels for the fabrication of sub-surface porous GaN by electrochemical etching FCP Massabuau, PH Griffin, HP Springbett, Y Liu, RV Kumar, T Zhu, ... APL Materials 8 (3), 2020	36	2020
Microstructural, optical, and electrical characterization of semipolar (112 2) gallium nitride grown by epitaxial lateral overgrowth T Zhu, CF Johnston, MJ Kappers, RA Oliver Journal of Applied Physics 108 (8), 2010	36	2010
Encapsulation of methylammonium lead bromide perovskite in nanoporous GaN KTP Lim, C Deakin, B Ding, X Bai, P Griffin, T Zhu, RA Oliver, ... APL Materials 7 (2), 2019	32	2019
Origins of spectral diffusion in the micro-photoluminescence of single InGaN quantum dots BPL Reid, T Zhu, TJ Puchtler, LJ Fletcher, CCS Chan, RA Oliver, ... Japanese Journal of Applied Physics 52 (8S), 08JE01, 2013	31	2013

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