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Alberto Debernardi
Alberto Debernardi
Primo Ricercatore, CNR-IMM, sede Agrate Brianza
Email verificata su mdm.imm.cnr.it
Titolo
Citata da
Citata da
Anno
Anharmonic phonon lifetimes in semiconductors from density-functional perturbation theory
A Debernardi, S Baroni, E Molinari
Physical review letters 75 (9), 1819, 1995
4571995
Optical vibrons in CdSe dots and dispersion relation of the bulk material
C Trallero-Giner, A Debernardi, M Cardona, E Menendez-Proupin, ...
Physical Review B 57 (8), 4664, 1998
2881998
Phonon linewidth in III-V semiconductors from density-functional perturbation theory
A Debernardi
Physical Review B 57 (20), 12847, 1998
2261998
Ab initio thermodynamics of metals: Al and W
A Debernardi, M Alouani, H Dreyssé
Physical Review B 63 (6), 064305, 2001
1292001
Anharmonic effects in the phonons of III–V semiconductors: first principles calculations
A Debernardi
Solid state communications 113 (1), 1-10, 1999
1161999
Lifetime of phonons in semiconductors under pressure
C Ulrich, E Anastassakis, K Syassen, A Debernardi, M Cardona
Physical review letters 78 (7), 1283, 1997
1121997
Isotopic effects on the lattice constant in compound semiconductors by perturbation theory: An ab initio calculation
A Debernardi, M Cardona
Physical Review B 54 (16), 11305, 1996
1101996
Raman linewidths of optical phonons in 3 C− S i C under pressure: First-principles calculations and experimental results
A Debernardi, C Ulrich, K Syassen, M Cardona
Physical Review B 59 (10), 6774, 1999
941999
Vibrational and electrical properties of hexagonal La2O3 films
G Scarel, A Debernardi, D Tsoutsou, S Spiga, SC Capelli, L Lamagna, ...
Applied Physics Letters 91 (10), 2007
782007
The phonon dispersion of wurtzite CdSe
F Widulle, S Kramp, NM Pyka, A Göbel, T Ruf, A Debernardi, R Lauck, ...
Physica B: Condensed Matter 263, 448-451, 1999
691999
Third-order density-functional perturbation theory: A practical implementation with applications to anharmonic couplings in Si
A Debernardi, S Baroni
Solid state communications 91 (10), 813-816, 1994
661994
Breaking the doping limit in silicon by deep impurities
M Wang, A Debernardi, Y Berencén, R Heller, C Xu, Y Yuan, Y Xie, ...
Physical Review Applied 11 (5), 054039, 2019
632019
Pressure dependence of Raman linewidth in semiconductors
A Debernardi, C Ulrich, M Cardona, K Syassen
Physica status solidi (b) 223 (1), 213-223, 2001
632001
Computation of the Stark effect in P impurity states in silicon
A Debernardi, A Baldereschi, M Fanciulli
Physical Review B—Condensed Matter and Materials Physics 74 (3), 035202, 2006
562006
Infrared spectroscopy and X-ray diffraction studies on the crystallographic evolution of La2O3 films upon annealing
D Tsoutsou, G Scarel, A Debernardi, SC Capelli, SN Volkos, L Lamagna, ...
Microelectronic Engineering 85 (12), 2411-2413, 2008
552008
Raman study of isotope effects and phonon eigenvectors in SiC
F Widulle, T Ruf, O Buresch, A Debernardi, M Cardona
Physical review letters 82 (15), 3089, 1999
531999
Lattice dynamics of wurtzite CdS: Neutron scattering and ab-initio calculations
A Debernardi, NM Pyka, A Göbel, T Ruf, R Lauck, S Kramp, M Cardona
Solid state communications 103 (5), 297-301, 1997
521997
Ab initio study of magnetic interaction of Fe doped ZnO with intrinsic vacancies
A Debernardi, M Fanciulli
Applied physics letters 90 (21), 2007
512007
Structural and electronic properties of NiMnSb Heusler compound and its interface with GaAs
A Debernardi, M Peressi, A Baldereschi
Materials Science and Engineering: C 23 (6-8), 743-746, 2003
512003
Infrared absorption in amorphous silicon from ab initio molecular dynamics
A Debernardi, M Bernasconi, M Cardona, M Parrinello
Applied physics letters 71 (18), 2692-2694, 1997
481997
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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