Theodore D Moustakas

Citata da

	Tutte	Dal 2019
Citazioni	19578	3132
Indice H	72	29
i10-index	241	79

820

410

205

615

198519861987198819891990199119921993199419951996199719981999200020012002200320042005200620072008200920102011201220132014201520162017201820192020202120222023202488 64 47 59 73 50 73 72 164 194 337 571 692 692 817 728 642 590 526 465 516 590 544 549 576 550 604 619 754 655 632 738 768 640 649 625 601 474 408 375

Accesso pubblico

Visualizza tutto

19 articoli

0 articoli

Disponibili

Non disponibili

In base ai mandati di finanziamento

Coautori

Roberto PaiellaProfessor of Electrical and Computer Engineering, Boston UniversityEmail verificata su bu.edu
Anirban BhattacharyyaUniversity of CalcuttaEmail verificata su caluniv.ac.in
Hock M. NgOctopus Innovation PartnersEmail verificata su octoip.com
Karl LudwigProfessor of Physics, Boston UniversityEmail verificata su bu.edu
Eleftherios IliopoulosDepartment of Physics, University of Crete & IESL-FORTHEmail verificata su physics.uoc.gr
Emmanouil DimakisGroup leader, Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum DresdenEmail verificata su hzdr.de
Yitao LiaoBoston UniversityEmail verificata su bu.edu
Dimitris KorakakisEmail verificata su mail.wvu.edu
Marco FanciulliProfessor of Condensed Matter Physics, University of Milano BicoccaEmail verificata su unimib.it
Piotr PerlinInstitute of High Pressure PhysicsEmail verificata su unipress.waw.pl
Henryk TeisseyreInstitute of Physics of the Polish Academy of SciencesEmail verificata su ifpan.edu.pl
Luca Dal NegroProfessor of Electrical and Computer Engineering, Boston UniversityEmail verificata su bu.edu
Michał LeszczynskiEmail verificata su unipress.waw.pl
Wei ZhangBoston University Photonics CenterEmail verificata su physics.bu.edu
Soumendra BasuAssociate Division Head, Materials Science & Engineering; Professor, Mechanical Engineering, BostonEmail verificata su bu.edu
Papo Chen, T.C. Chen, Tai-Chou Che...Boston UniversityEmail verificata su amat.com
Enrico BellottiBoston University Georgia Institute of TechnologyEmail verificata su bu.edu
HAIDING SUNProfessor of University of Science and Technology of ChinaEmail verificata su ustc.edu.cn
Emanuele Francesco PecoraTechnology ManagerEmail verificata su hq.doe.gov
Cristian StagarescuOptical Engineer SPE (Senior Principal Engineer), Photonic Devices Development, MACOMEmail verificata su macom.com

Segui

Theodore D Moustakas

Boston University, Electrical and Computer Engineering Department

Email verificata su bu.edu - Home page

nitride semiconductors amorphous semiconductors III-V compounds diamond thin films and metallic


Titolo Ordina per citazioni Ordina per anno Ordina per titolo	Citata da Citata da	Anno
Scattering of electrons at threading dislocations in GaN NG Weimann, LF Eastman, D Doppalapudi, HM Ng, TD Moustakas Journal of Applied Physics 83 (7), 3656-3659, 1998	811	1998
Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition R Singh, D Doppalapudi, TD Moustakas, LT Romano Applied Physics Letters 70 (9), 1089-1091, 1997	641	1997
Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon T Lei, TD Moustakas, RJ Graham, Y He, SJ Berkowitz Journal of Applied Physics 71 (10), 4933-4943, 1992	563	1992
The role of dislocation scattering in n-type GaN films HM Ng, D Doppalapudi, TD Moustakas, NG Weimann, LF Eastman Applied physics letters 73 (6), 821-823, 1998	558	1998
Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon T Lei, M Fanciulli, RJ Molnar, TD Moustakas, RJ Graham, J Scanlon Applied physics letters 59 (8), 944-946, 1991	555	1991
Metal contacts to gallium nitride JS Foresi, TD Moustakas Applied physics letters 62 (22), 2859-2861, 1993	527	1993
Towards the identification of the dominant donor in GaN P Perlin, T Suski, H Teisseyre, M Leszczynski, I Grzegory, J Jun, ... Physical review letters 75 (2), 296, 1995	412	1995
Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates T Lei, KF Ludwig Jr, TD Moustakas Journal of applied physics 74 (7), 4430-4437, 1993	361	1993
Growth of GaN by ECR-assisted MBE TD Moustakas, T Lei, RJ Molnar Physica B: Condensed Matter 185 (1-4), 36-49, 1993	339	1993
Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy D Doppalapudi, SN Basu, KF Ludwig Jr, TD Moustakas Journal of applied physics 84 (3), 1389-1395, 1998	336	1998
Gallium Nitride (GaN) JI Pankove, TD Moustakas (No Title), 1998	335	1998
Optical Devices Featuring textured semiconductor layers JSC TD Moustakas US Patent 8,035,113, 2011	334	2011
Doping, Schottky barrier and p n junction formation in amorphous germanium and silicon by rf sputtering W Paul, AJ Lewis, GAN Connell, TD Moustakas Solid State Communications 20 (10), 969-972, 1976	314	1976
Thermal expansion of gallium nitride M Leszczynski, T Suski, H Teisseyre, P Perlin, I Grzegory, J Jun, ... Journal of applied physics 76 (8), 4909-4911, 1994	295	1994
Effect of nitrogen on the growth of diamond films S Jin, TD Moustakas Applied Physics Letters 65 (4), 403-405, 1994	288	1994
Mechanism of yellow luminescence in GaN T Suski, P Perlin, H Teisseyre, M Leszczyński, I Grzegory, J Jun, ... Applied physics letters 67 (15), 2188-2190, 1995	286	1995
Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer H Teisseyre, P Perlin, T Suski, I Grzegory, S Porowski, J Jun, A Pietraszko, ... Journal of Applied Physics 76 (4), 2429-2434, 1994	252	1994
Electron transport mechanism in gallium nitride RJ Molnar, T Lei, TD Moustakas Applied physics letters 62 (1), 72-74, 1993	238	1993
Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species RJ Molnar, TD Moustakas Journal of Applied Physics 76 (8), 4587-4595, 1994	237	1994
Blue‐violet light emitting gallium nitride p‐n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy RJ Molnar, R Singh, TD Moustakas Applied physics letters 66 (3), 268-270, 1995	218	1995

Il sistema al momento non può eseguire l'operazione. Riprova più tardi.

Articoli 1–20

Citazioni per anno

Citazioni duplicate

Citazioni unite

Aggiungi coautoriCoautori

Segui

Citata da

Coautori