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Felix Julian Schupp
Felix Julian Schupp
IBM Research
Email verificata su zurich.ibm.com
Titolo
Citata da
Citata da
Anno
Shuttling a single charge across a one-dimensional array of silicon quantum dots
AR Mills, DM Zajac, MJ Gullans, FJ Schupp, TM Hazard, JR Petta
Nature communications 10 (1), 1063, 2019
2782019
A coherent nanomechanical oscillator driven by single-electron tunnelling
Y Wen, N Ares, FJ Schupp, T Pei, GAD Briggs, EA Laird
Nature physics 16 (1), 75-82, 2020
772020
Sensitive radio-frequency measurements of a quantum dot by tuning to perfect impedance matching
N Ares, FJ Schupp, A Mavalankar, G Rogers, J Griffiths, GAC Jones, ...
Physical Review Applied 5 (3), 034011, 2016
712016
One dimensional transport in silicon nanowire junction-less field effect transistors
MM Mirza, FJ Schupp, JA Mol, DA MacLaren, GAD Briggs, DJ Paul
Scientific reports 7 (1), 3004, 2017
462017
Sweet-spot operation of a germanium hole spin qubit with highly anisotropic noise sensitivity
NW Hendrickx, L Massai, M Mergenthaler, FJ Schupp, S Paredes, ...
Nature Materials, 1-8, 2024
352024
Sensitive radiofrequency readout of quantum dots using an ultra-low-noise SQUID amplifier
FJ Schupp, F Vigneau, Y Wen, A Mavalankar, J Griffiths, GAC Jones, ...
Journal of Applied Physics 127 (24), 2020
282020
Secondary electron interference from trigonal warping in clean carbon nanotubes
A Dirnaichner, M Del Valle, KJG Götz, FJ Schupp, N Paradiso, M Grifoni, ...
Physical review letters 117 (16), 166804, 2016
272016
Nanomechanical characterization of the Kondo charge dynamics in a carbon nanotube
KJG Götz, DR Schmid, FJ Schupp, PL Stiller, C Strunk, AK Hüttel
Physical review letters 120 (24), 246802, 2018
232018
Single-electron devices in silicon
FJ Schupp
Materials Science and Technology 33 (8), 944-962, 2017
172017
Impact of interface traps on charge noise, mobility and percolation density in Ge/SiGe heterostructures
L Massai, B Hetényi, M Mergenthaler, FJ Schupp, L Sommer, S Paredes, ...
arXiv preprint arXiv:2310.05902, 2023
162023
Anisotropic etching of graphene in inert and oxygen atmospheres
F Oberhuber, S Blien, F Schupp, D Weiss, J Eroms
physica status solidi (a) 214 (2), 1600459, 2017
142017
Quantum interference in silicon one-dimensional junctionless nanowire field-effect transistors
FJ Schupp, MM Mirza, DA MacLaren, GAD Briggs, DJ Paul, JA Mol
Physical Review B 98 (23), 235428, 2018
52018
Carbon nanotube millikelvin transport and nanomechanics
KJG Götz, FJ Schupp, AK Hüttel
physica status solidi (b) 256 (6), 1800517, 2019
42019
Impact of interface traps on charge noise and low-density transport properties in Ge/SiGe heterostructures
L Massai, B Hetényi, M Mergenthaler, FJ Schupp, L Sommer, S Paredes, ...
Communications Materials 5 (1), 151, 2024
32024
Spin Qubits in Silicon FinFET Devices
A Fuhrer, M Aldeghi, T Berger, LC Camenzind, RS Eggli, S Geyer, ...
2022 International Electron Devices Meeting (IEDM), 14.1. 1-14.1. 4, 2022
32022
Prospects of silicide contacts for silicon quantum electronic devices
K Tsoukalas, F Schupp, L Sommer, I Bouquet, M Mergenthaler, S Paredes, ...
Applied Physics Letters 125 (1), 2024
22024
Nanomanipulation an Graphen
F Schupp
22011
Capacitive crosstalk in gate-based dispersive sensing of spin qubits
EG Kelly, A Orekhov, NW Hendrickx, M Mergenthaler, FJ Schupp, ...
Applied Physics Letters 123 (26), 2023
12023
Novel contact materials for carbon-nanotube nano-electromechanical resonators
F Schupp
12014
Isolated bottom corner gates for spin-qubits in a fin
FJ Schupp, NV Trivino, M Mergenthaler, AF Janett
US Patent App. 18/048,430, 2024
2024
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
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