Segui
Baiwei Wang
Baiwei Wang
Process Engineer, Applied Materials
Email verificata su amat.com
Titolo
Citata da
Citata da
Anno
Self-heating–induced healing of lithium dendrites
L Li, S Basu, Y Wang, Z Chen, P Hundekar, B Wang, J Shi, Y Shi, ...
Science 359 (6383), 1513-1516, 2018
4732018
A chiral switchable photovoltaic ferroelectric 1D perovskite
Y Hu, F Florio, Z Chen, WA Phelan, MA Siegler, Z Zhou, Y Guo, R Hawks, ...
Science Advances 6 (9), eaay4213, 2020
1442020
Carrier lifetime enhancement in halide perovskite via remote epitaxy
J Jiang, X Sun, X Chen, B Wang, Z Chen, Y Hu, Y Guo, L Zhang, Y Ma, ...
Nature communications 10 (1), 4145, 2019
1422019
Giant pyroelectricity in nanomembranes
J Jiang, L Zhang, C Ming, H Zhou, P Bose, Y Guo, Y Hu, B Wang, Z Chen, ...
Nature 607 (7919), 480-485, 2022
682022
A Reconfigurable Remotely Epitaxial VO2 Electrical Heterostructure
Y Guo, X Sun, J Jiang, B Wang, X Chen, X Yin, W Qi, L Gao, L Zhang, ...
Nano letters 20 (1), 33-42, 2019
442019
Growth and properties of epitaxial Ti1− xMgxN (001) layers
B Wang, S Kerdsongpanya, ME McGahay, E Milosevic, P Patsalas, D Gall
Journal of Vacuum Science & Technology A 36 (6), 2018
392018
Thermal boundary conductance across epitaxial metal/sapphire interfaces
YR Koh, J Shi, B Wang, R Hu, H Ahmad, S Kerdsongpanya, E Milosevic, ...
Physical Review B 102 (20), 205304, 2020
372020
The resistivity size effect in epitaxial Nb(001) and Nb(011) layers
E Milosevic, S Kerdsongpanya, ME McGahay, B Wang, D Gall
IEEE Transactions on Electron Devices 66 (8), 3473-3478, 2019
352019
Fully strained epitaxial Ti1−xMgxN(001) layers
B Wang, D Gall
Thin Solid Films 688, 137165, 2019
292019
Van der Waals epitaxy and remote epitaxy of LiNbO3 thin films by pulsed laser deposition
R Jia, HS Kum, X Sun, Y Guo, B Wang, P Fang, J Jiang, D Gall, TM Lu, ...
Journal of Vacuum Science & Technology A 39 (4), 2021
192021
Structural Stabilization and Piezoelectric Enhancement in Epitaxial (Ti1−xMgx)0.25Al0.75N(0001) Layers
B Wang, K Aryana, JT Gaskins, PE Hopkins, SV Khare, D Gall
Advanced Functional Materials 30 (30), 2001915, 2020
162020
Bandgap and strain engineering in epitaxial rocksalt structure (Ti0.5Mg0.5)1−xAlxN(001) semiconductors
B Wang, M Zhang, V Adhikari, P Fang, SV Khare, D Gall
Journal of Materials Chemistry C 8 (36), 12677-12688, 2020
142020
Band gap and electron transport in epitaxial cubic
ME McGahay, B Wang, J Shi, D Gall
Physical Review B 101 (20), 205206, 2020
142020
Epitaxial MoCx: Competition between cubic δ-MoCy (111) and hexagonal β-Mo2C (0001)
P Fang, B Wang, D Gall
Surface and Coatings Technology 420, 127333, 2021
122021
A new semiconductor: Ti0.5Mg0.5N(001)
B Wang, D Gall
2018 IEEE Nanotechnology Symposium (ANTS), Albany, NY, 1-5, 2018
112018
Tunable Infrared Plasmonic Properties of Epitaxial Ti1–xMgxN(001) Layers
B Wang, P Nawarat, KM Lewis, P Patsalas, D Gall
ACS Applied Materials & Interfaces 13 (19), 22738-22748, 2021
102021
Searching for Circular Photo Galvanic Effect in Oxyhalide Perovskite Bi4NbO8Cl
Z Chen, R Xu, S Ma, Y Ma, Y Hu, L Zhang, Y Guo, Z Huang, B Wang, ...
Advanced Functional Materials 32 (47), 2206343, 2022
92022
Epitaxial growth of cubic WCy (001) on MgO (001)
P Fang, B Wang, CP Mulligan, TM Murray, SV Khare, D Gall
Journal of Alloys and Compounds 860, 158403, 2021
62021
Published in the proceedings of the 2018 IEEE Nanotechnology Symposium (ANTS)
B Wang, D Gall
Albany, NY, 1-5, 2018
52018
Metal etch in high aspect-ratio features
B Wang, XC Chen, RP Reddy, O Jan, Z Cui, A Wang
US Patent 11,631,589, 2023
12023
Il sistema al momento non può eseguire l'operazione. Riprova più tardi.
Articoli 1–20