Materials analysis by ion channeling: submicron crystallography LC Feldman, JW Mayer, STA Picraux
Academic Press, 2012
1670 2012 Anisotropic swelling and fracture of silicon nanowires during lithiation XH Liu, H Zheng, L Zhong, S Huang, K Karki, LQ Zhang, Y Liu, A Kushima, ...
Nano letters 11 (8), 3312-3318, 2011
859 2011 In situ atomic-scale imaging of electrochemical lithiation in siliconXH Liu, JW Wang, S Huang, F Fan, X Huang, Y Liu, S Krylyuk, J Yoo, ...
Nature nanotechnology 7 (11), 749-756, 2012
700 2012 Ultrafast electrochemical lithiation of individual Si nanowire anodes XH Liu, LQ Zhang, L Zhong, Y Liu, H Zheng, JW Wang, JH Cho, ...
Nano letters 11 (6), 2251-2258, 2011
485 2011 Adaptable silicon–carbon nanocables sandwiched between reduced graphene oxide sheets as lithium ion battery anodes B Wang, X Li, X Zhang, B Luo, M Jin, M Liang, SA Dayeh, ST Picraux, ...
ACS nano 7 (2), 1437-1445, 2013
477 2013 Reversible nanopore formation in Ge nanowires during lithiation–delithiation cycling: An in situ transmission electron microscopy study XH Liu, S Huang, ST Picraux, J Li, T Zhu, JY Huang
Nano letters 11 (9), 3991-3997, 2011
441 2011 Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering JW Mayer, L Eriksson, ST Picraux, JA Davies
Canadian Journal of Physics 46 (6), 663-673, 1968
360 1968 Ion beams in silicon processing and characterization E Chason, ST Picraux, JM Poate, JO Borland, MI Current, ...
Journal of applied physics 81 (10), 6513-6561, 1997
347 1997 Epitaxial growth of rare‐earth silicides on (111) Si JA Knapp, ST Picraux
Applied physics letters 48 (7), 466-468, 1986
325 1986 Lotus effect amplifies light-induced contact angle switching R Rosario, D Gust, AA Garcia, M Hayes, JL Taraci, T Clement, JW Dailey, ...
The Journal of Physical Chemistry B 108 (34), 12640-12642, 2004
316 2004 Dependence of critical layer thickness on strain for InxGa1− xAs/GaAs strained‐layer superlattices IJ Fritz, ST Picraux, LR Dawson, TJ Drummond, WD Laidig, NG Anderson
Applied physics letters 46 (10), 967-969, 1985
282 1985 Are nanoporous materials radiation resistant? EM Bringa, JD Monk, A Caro, A Misra, L Zepeda-Ruiz, M Duchaineau, ...
Nano letters 12 (7), 3351-3355, 2012
270 2012 Critical Stresses for JY Tsao, BW Dodson, ST Picraux, DM Cornelison
Physical review letters 59 (21), 2455, 1987
240 1987 Formation of SiC in silicon by ion implantation JA Borders, ST Picraux, W Beezhold
Applied Physics Letters 18 (11), 509-511, 1971
238 1971 Role of integrated lateral stress in surface deformation of He‐implanted surfaces EP EerNisse, ST Picraux
Journal of Applied Physics 48 (1), 9-17, 1977
235 1977 Defect trapping of ion‐implanted deuterium in Fe SM Myers, ST Picraux, RE Stoltz
Journal of Applied Physics 50 (9), 5710-5719, 1979
214 1979 Partitioning of ion-induced surface and bulk displacements DK Brice, JY Tsao, ST Picraux
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1989
190 1989 Direct observation of nanoscale size effects in Ge semiconductor nanowire growth SA Dayeh, ST Picraux
Nano letters 10 (10), 4032-4039, 2010
180 2010 Precipitation and relaxation in strained Si1− yCy/Si heterostructures JW Strane, HJ Stein, SR Lee, ST Picraux, JK Watanabe, JW Mayer
Journal of applied physics 76 (6), 3656-3668, 1994
178 1994 Metastable SiGeC formation by solid phase epitaxy JW Strane, HJ Stein, SR Lee, BL Doyle, ST Picraux, JW Mayer
Applied physics letters 63 (20), 2786-2788, 1993
174 1993 
Jian Yu Huang (黄建宇)Clean Nano Energy Center, State Key Laboratory of Metastable Materials Science and TechnologyEmail verificata su ysu.edu.cn