Wide band gap ferromagnetic semiconductors and oxides SJ Pearton, CR Abernathy, ME Overberg, GT Thaler, DP Norton, ...
Journal of Applied Physics 93 (1), 1-13, 2003
1221 2003 Advances in wide bandgap materials for semiconductor spintronics SJ Pearton, CR Abernathy, DP Norton, AF Hebard, YD Park, LA Boatner, ...
Materials Science and Engineering: R: Reports 40 (4), 137-168, 2003
568 2003 Magnetic properties of n -GaMnN thin films GT Thaler, ME Overberg, B Gila, R Frazier, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 80 (21), 3964-3966, 2002
448 2002 Indication of ferromagnetism in molecular-beam-epitaxy-derived N-type GaMnN ME Overberg, CR Abernathy, SJ Pearton, NA Theodoropoulou, ...
Applied Physics Letters 79 (9), 1312-1314, 2001
388 2001 Effect of threading dislocations on the Bragg peakwidths of GaN, AlGaN, and AlN heterolayers SR Lee, AM West, AA Allerman, KE Waldrip, DM Follstaedt, PP Provencio, ...
Applied Physics Letters 86 (24), 241904, 2005
362 2005 Magnetic and structural properties of Mn-implanted GaN N Theodoropoulou, AF Hebard, ME Overberg, CR Abernathy, SJ Pearton, ...
Applied Physics Letters 78 (22), 3475-3477, 2001
358 2001 Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn) P: C N Theodoropoulou, AF Hebard, ME Overberg, CR Abernathy, SJ Pearton, ...
Physical review letters 89 (10), 107203, 2002
289 2002 Effect of temperature on F Ren, M Hong, SNG Chu, MA Marcus, MJ Schurman, A Baca, SJ Pearton, ...
Applied Physics Letters 73 (26), 3893-3895, 1998
284 1998 1.54‐μm photoluminescence from Er‐implanted GaN and AlN RG Wilson, RN Schwartz, CR Abernathy, SJ Pearton, N Newman, ...
Applied Physics Letters 65 (8), 992-994, 1994
273 1994 Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxy CR Abernathy, SJ Pearton, R Caruso, F Ren, J Kovalchik
Applied Physics Letters 55 (17), 1750-1752, 1989
263 1989 Wet chemical etching of AlN JR Mileham, SJ Pearton, CR Abernathy, JD MacKenzie, RJ Shul, ...
Applied physics letters 67 (8), 1119-1121, 1995
238 1995 Influence of MgO and B Luo, JW Johnson, J Kim, RM Mehandru, F Ren, BP Gila, AH Onstine, ...
Applied Physics Letters 80 (9), 1661-1663, 2002
224 2002 Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN SJ Pearton, CR Abernathy, F Ren
Applied physics letters 64 (17), 2294-2296, 1994
218 1994 Gallium nitride processing for electronics, sensors and spintronics SJ Pearton, CR Abernathy, F Ren
Springer Science & Business Media, 2006
199 2006 Wide bandgap GaN-based semiconductors for spintronics SJ Pearton, CR Abernathy, GT Thaler, RM Frazier, DP Norton, F Ren, ...
Journal of Physics: Condensed Matter 16 (7), R209, 2004
195 2004 CCl 4 doping of GaN grown by metalorganic molecular beam epitaxyCR Abernathy, JD MacKenzie, SJ Pearton, WS Hobson
Applied physics letters 66 (15), 1969-1971, 1995
181 * 1995 AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using R Mehandru, B Luo, J Kim, F Ren, BP Gila, AH Onstine, CR Abernathy, ...
Applied physics letters 82 (15), 2530-2532, 2003
177 2003 Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy SJ Pearton, CR Abernathy, F Ren, JR Lothian, PW Wisk, A Katz
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 11 (4 …, 1993
177 * 1993 High-density plasma etching of compound semiconductors RJ Shul, GB McClellan, RD Briggs, DJ Rieger, SJ Pearton, CR Abernathy, ...
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 15 (3 …, 1997
175 1997 Pressure-induced changes in the conductivity of BS Kang, S Kim, F Ren, JW Johnson, RJ Therrien, P Rajagopal, ...
Applied Physics Letters 85 (14), 2962-2964, 2004
165 2004 